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Synthesis of Silicon Nanostructures: Comparative Study

Published: 20 February 2013
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Abstract

Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.

Published in Advances in Materials (Volume 2, Issue 1)
DOI 10.11648/j.am.20130201.12
Page(s) 6-11
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Laser Ablation, Laser Annealing, Silicon Nanostructures

References
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[3] A. Loni, L. Canham and P. Calcott. "Blue photoluminescence from rapid thermally oxidized porous silicon following storage in ambient air" J. Appl.Phys., 77, 1995, pp. H. Koyama,T. Nakagawa, T. Ozaki and N. Koshida "Post‐anodization filtered illumination of porous silicon in HF so-lutions: An effective method to improve luminescence prop-erties" Appl.Phys.Lett.,65,1994, pp. 1656.
[4] L. Koker and K. Kolasiniski, "In situ photoluminescence studies of photochemically grown porous silicon", Mat.Sci. & Eng B. 69-70, 2000, pp.132.
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[8] H. Mavi, B. Rasheed, A. Shukla, S. Abbi, and K. Jain, "Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon" J.Phys.D:Appl.Phys.34, 2001, 292.
[9] E. Teo, B. Breese, A. Bettiol, D. Karasi, R. Chameaux, F. Watt, and D. Blackwood, "Multicolor Photoluminescence from Porous Silicon Using Focused, High-Energy Helium Ions" Adv. Mater, 18, 2006, pp. 51.
[10] R. Prabakaran, R. Kesavamoorth, and A. Singh, "Optical and microstructural investigations of porous silicon" Mat. Sci. 28, 2005, pp. 219.
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[14] P. Deak, Z. Hajnal and D. Fuchs, "Correlation between the luminescence and Raman peaks in quantum-confined systems" Thin Solid Films, 255, 1995, pp. 241.
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    Bassam G. Rasheed. (2013). Synthesis of Silicon Nanostructures: Comparative Study. Advances in Materials, 2(1), 6-11. https://doi.org/10.11648/j.am.20130201.12

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    Bassam G. Rasheed. Synthesis of Silicon Nanostructures: Comparative Study. Adv. Mater. 2013, 2(1), 6-11. doi: 10.11648/j.am.20130201.12

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    Bassam G. Rasheed. Synthesis of Silicon Nanostructures: Comparative Study. Adv Mater. 2013;2(1):6-11. doi: 10.11648/j.am.20130201.12

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  • @article{10.11648/j.am.20130201.12,
      author = {Bassam G. Rasheed},
      title = {Synthesis of Silicon Nanostructures: Comparative Study},
      journal = {Advances in Materials},
      volume = {2},
      number = {1},
      pages = {6-11},
      doi = {10.11648/j.am.20130201.12},
      url = {https://doi.org/10.11648/j.am.20130201.12},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20130201.12},
      abstract = {Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.},
     year = {2013}
    }
    

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  • TY  - JOUR
    T1  - Synthesis of Silicon Nanostructures: Comparative Study
    AU  - Bassam G. Rasheed
    Y1  - 2013/02/20
    PY  - 2013
    N1  - https://doi.org/10.11648/j.am.20130201.12
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    T2  - Advances in Materials
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    JO  - Advances in Materials
    SP  - 6
    EP  - 11
    PB  - Science Publishing Group
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    UR  - https://doi.org/10.11648/j.am.20130201.12
    AB  - Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.
    VL  - 2
    IS  - 1
    ER  - 

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Author Information
  • Applied sciences department, University of Technology, Baghdad - IRAQ

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