Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline

Ousmane Ba; Nacire Mbengue; Fatou Dia; Alassane Diaw; Mamadou Moustapha Diop; Bassirou Ba; Fabé Idrissa Barro

doi:doi:10.11648/j.sr.20160401.14

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Graded S_iN_x/S_iO_xN_y Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline

Ousmane Ba, Nacire Mbengue, Fatou Dia, Alassane Diaw, Mamadou Moustapha Diop, Bassirou Ba, Fabé Idrissa Barro

Published in Science Research (Volume 4, Issue 1)

Received: 31 December 2015 Accepted: 8 January 2016 Published: 25 February 2016

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Abstract

These days solar cells layers are increasingly used primarily because of their low cost. During the last decades the performance of these cells were clearly improved. In the present work, a comparative study of two photovoltaic materials that are gallium arsenic and silicon. This allowed us to define the most efficient photovoltaic material. We have used for this purpose a method of adequate global search optimization for the search for optimal performance based on structural parameters (doping and thickness) of solar cells. This optimization method has allowed us to obtain a return of 26.15% for a solar cell based on GaAs and 18.15% for a solar cell based on Si, we were interested as to show the influence of the depth of penetration of light photons on the solar cells based on Si and GaAs which showed that the variation of the current density and more importantly on the deposit Arsenide Gallium 45.3 A / cm².

Published in	Science Research (Volume 4, Issue 1)
DOI	10.11648/j.sr.20160401.14
Page(s)	21-25
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

Solar Cells, GaAs, Si, Anti-Reflective Coating, Optimization, Performance

References

[1]	Aiken, D. J. (2000a). Antireflection coating design for series interconnected multi-junction solar cells. Progress in Photovoltaic: Research and Applications, volume 8, numéro 6, p. 563-570.
[2]	J. J. Liou and W. W. Wong, "Comparison and optimization of the performance of Si and GaAs solar cells", Solar Energy Mater. Solar Cells, 28(1992), pp. 9-28.
[3]	Bai Yiming, Chen Nuofu, Dai Ruixuan, et al. Dispersion effect on double-layer antireflection coatings of GaAs solar cells. Chinese Journal of Semi-conductors, 2006, 27(4): 725 (in Chinese).
[4]	J.-F. Lelièvre, E. Fourmond, A Kaminski, et al., Solar Energy Material & Solar Cells vol. 93 (2009), 1281-1289.
[5]	Jaouad, A. et Aimez, V. (2006). Passivation of air-exposed AlGaAs using low frequency plasma-enhanced chemical vapor deposition of silicon nitride. Applied Physics Letters, volume 89, numéro 9, p. 092125.
[6]	H. E. Elgamel and M. Allen Barnett, ‘Efficient Combination of Surface and Bulk Passivation Schemes of High-efficiency Multicrystalline Silicon Solar Cells’, J. Appl. Phys. 78, 5, pp. 3457-3461, 1995.
[7]	Jaouad, A., Aimez, V. et Aktik, C. (2004). GaAs passivation by low-frequency plasma enhanced chemical vapour deposition of silicon nitride. Electronics Letters, volume 40, numéro 16, p. 1024-1026.
[8]	S. C. Tsaur et al., "Theoretical and experimental results for GaAs solar cells", in proceedings of the fourth international symposium on GaAs and related compounds, conference series N°17, The Institute of Physics, London, U. K.,(2009), pp. 156.
[9]	G. Santana and A. Morales-Acevedo, Solar Energy Materials & Solar Cells 60 (2000) 135.
[10]	G Santana and A. Morales-Acevedo. Optimization of pecvd SiNx H films for silicon solar cells. Solar Energy Materials and Solar Cells, pages 135–142, 2000.
[11]	H. Mäckel, R Lüdeman. ”Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation”, Journal of Applied physics, 92(5), 2002, pp. 2602-2609.
[12]	M. I. Alayo, I. Pereyra, W. L. Scopel, M. C. A. Fanitini, “On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapour deposition (PECVD) SiOxNy films”, Thin Solid Films, 402, 2002, pp. 254-161.
[13]	J. J. Liou, “Physical Models for Predicting the Performances of Si/Si, AlGaAs/GaAs and Si/SiGe Solar Cells,” Solar Energy Materials and Solar Cells, vol. 29, no. 3, (2009), pp. 261-276.
[14]	Sadek Khellaf and Abdelhamid Ounissi “Optimizing the Efficiency of Solar Cells based on GaAs University Center of Bechar, Algeria vol. 69, no. 2-3, (2005), pp. 57-63.

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APA Style

Ousmane Ba, Nacire Mbengue, Fatou Dia, Alassane Diaw, Mamadou Moustapha Diop, et al. (2016). Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline. Science Research, 4(1), 21-25. https://doi.org/10.11648/j.sr.20160401.14

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ACS Style

Ousmane Ba; Nacire Mbengue; Fatou Dia; Alassane Diaw; Mamadou Moustapha Diop, et al. Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline. Sci. Res. 2016, 4(1), 21-25. doi: 10.11648/j.sr.20160401.14

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AMA Style

Ousmane Ba, Nacire Mbengue, Fatou Dia, Alassane Diaw, Mamadou Moustapha Diop, et al. Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline. Sci Res. 2016;4(1):21-25. doi: 10.11648/j.sr.20160401.14

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@article{10.11648/j.sr.20160401.14,
  author = {Ousmane Ba and Nacire Mbengue and Fatou Dia and Alassane Diaw and Mamadou Moustapha Diop and Bassirou Ba and Fabé Idrissa Barro},
  title = {Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline},
  journal = {Science Research},
  volume = {4},
  number = {1},
  pages = {21-25},
  doi = {10.11648/j.sr.20160401.14},
  url = {https://doi.org/10.11648/j.sr.20160401.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sr.20160401.14},
  abstract = {These days solar cells layers are increasingly used primarily because of their low cost. During the last decades the performance of these cells were clearly improved. In the present work, a comparative study of two photovoltaic materials that are gallium arsenic and silicon. This allowed us to define the most efficient photovoltaic material. We have used for this purpose a method of adequate global search optimization for the search for optimal performance based on structural parameters (doping and thickness) of solar cells. This optimization method has allowed us to obtain a return of 26.15% for a solar cell based on GaAs and 18.15% for a solar cell based on Si, we were interested as to show the influence of the depth of penetration of light photons on the solar cells based on Si and GaAs which showed that the variation of the current density and more importantly on the deposit Arsenide Gallium 45.3 A / cm2.},
 year = {2016}
}

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TY  - JOUR
T1  - Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline
AU  - Ousmane Ba
AU  - Nacire Mbengue
AU  - Fatou Dia
AU  - Alassane Diaw
AU  - Mamadou Moustapha Diop
AU  - Bassirou Ba
AU  - Fabé Idrissa Barro
Y1  - 2016/02/25
PY  - 2016
N1  - https://doi.org/10.11648/j.sr.20160401.14
DO  - 10.11648/j.sr.20160401.14
T2  - Science Research
JF  - Science Research
JO  - Science Research
SP  - 21
EP  - 25
PB  - Science Publishing Group
SN  - 2329-0927
UR  - https://doi.org/10.11648/j.sr.20160401.14
AB  - These days solar cells layers are increasingly used primarily because of their low cost. During the last decades the performance of these cells were clearly improved. In the present work, a comparative study of two photovoltaic materials that are gallium arsenic and silicon. This allowed us to define the most efficient photovoltaic material. We have used for this purpose a method of adequate global search optimization for the search for optimal performance based on structural parameters (doping and thickness) of solar cells. This optimization method has allowed us to obtain a return of 26.15% for a solar cell based on GaAs and 18.15% for a solar cell based on Si, we were interested as to show the influence of the depth of penetration of light photons on the solar cells based on Si and GaAs which showed that the variation of the current density and more importantly on the deposit Arsenide Gallium 45.3 A / cm2.
VL  - 4
IS  - 1
ER  -

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Author Information

Ousmane Ba

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Nacire Mbengue

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Fatou Dia

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Alassane Diaw

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Mamadou Moustapha Diop

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Bassirou Ba

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal
Fabé Idrissa Barro

Physical Department, Laboratory of the Semiconductors and Solar Energy (LASSE), University Cheikh Anta Diop, Dakar, Senegal

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APA Style

Ousmane Ba, Nacire Mbengue, Fatou Dia, Alassane Diaw, Mamadou Moustapha Diop, et al. (2016). Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline. Science Research, 4(1), 21-25. https://doi.org/10.11648/j.sr.20160401.14

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ACS Style

Ousmane Ba; Nacire Mbengue; Fatou Dia; Alassane Diaw; Mamadou Moustapha Diop, et al. Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline. Sci. Res. 2016, 4(1), 21-25. doi: 10.11648/j.sr.20160401.14

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AMA Style

Ousmane Ba, Nacire Mbengue, Fatou Dia, Alassane Diaw, Mamadou Moustapha Diop, et al. Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline. Sci Res. 2016;4(1):21-25. doi: 10.11648/j.sr.20160401.14

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@article{10.11648/j.sr.20160401.14,
  author = {Ousmane Ba and Nacire Mbengue and Fatou Dia and Alassane Diaw and Mamadou Moustapha Diop and Bassirou Ba and Fabé Idrissa Barro},
  title = {Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline},
  journal = {Science Research},
  volume = {4},
  number = {1},
  pages = {21-25},
  doi = {10.11648/j.sr.20160401.14},
  url = {https://doi.org/10.11648/j.sr.20160401.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sr.20160401.14},
  abstract = {These days solar cells layers are increasingly used primarily because of their low cost. During the last decades the performance of these cells were clearly improved. In the present work, a comparative study of two photovoltaic materials that are gallium arsenic and silicon. This allowed us to define the most efficient photovoltaic material. We have used for this purpose a method of adequate global search optimization for the search for optimal performance based on structural parameters (doping and thickness) of solar cells. This optimization method has allowed us to obtain a return of 26.15% for a solar cell based on GaAs and 18.15% for a solar cell based on Si, we were interested as to show the influence of the depth of penetration of light photons on the solar cells based on Si and GaAs which showed that the variation of the current density and more importantly on the deposit Arsenide Gallium 45.3 A / cm2.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - Graded SiNx/SiOxNy Layers as Antireflective Coatings for Solar Cells Based on GaAs and Silicon Crystalline
AU  - Ousmane Ba
AU  - Nacire Mbengue
AU  - Fatou Dia
AU  - Alassane Diaw
AU  - Mamadou Moustapha Diop
AU  - Bassirou Ba
AU  - Fabé Idrissa Barro
Y1  - 2016/02/25
PY  - 2016
N1  - https://doi.org/10.11648/j.sr.20160401.14
DO  - 10.11648/j.sr.20160401.14
T2  - Science Research
JF  - Science Research
JO  - Science Research
SP  - 21
EP  - 25
PB  - Science Publishing Group
SN  - 2329-0927
UR  - https://doi.org/10.11648/j.sr.20160401.14
AB  - These days solar cells layers are increasingly used primarily because of their low cost. During the last decades the performance of these cells were clearly improved. In the present work, a comparative study of two photovoltaic materials that are gallium arsenic and silicon. This allowed us to define the most efficient photovoltaic material. We have used for this purpose a method of adequate global search optimization for the search for optimal performance based on structural parameters (doping and thickness) of solar cells. This optimization method has allowed us to obtain a return of 26.15% for a solar cell based on GaAs and 18.15% for a solar cell based on Si, we were interested as to show the influence of the depth of penetration of light photons on the solar cells based on Si and GaAs which showed that the variation of the current density and more importantly on the deposit Arsenide Gallium 45.3 A / cm2.
VL  - 4
IS  - 1
ER  -

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