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Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates

Received: 21 October 2015     Accepted: 27 October 2015     Published: 13 November 2015
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Abstract

ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.

Published in Science Research (Volume 3, Issue 6)
DOI 10.11648/j.sr.20150306.16
Page(s) 300-303
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Film Formation, Characterization, Mist-CVD, ZnO, LED

References
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[2] J.G. Lu, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, S. Fujita, J. Crystal Growth 299(2007)1-10.
[3] Toshiyuki Kawaharamura, Hiroyuki Nishinaka, and Shizuo Fujita, Jpn. J. Appl. Phys. Vol.47, No.6, 2008, pp. 4669-4675.
[4] N. Fujimura, T. Nishihara, S. Goto, J. Xua, T. Ito, J. Cryst. Growth 130(1993)269.
[5] Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma, Makoto Ohtani, Takayuki Makino, Masatomo Sumiya, Keita Ohtani, Shigefusa F. Chichibu, Syunrou Fuke, Yusaburou Segawa, Hideo Ohno, Hideomi Koinuma And Masashi Kawasaki, Nature Materials, VOL 4, JANUARY 2005, pp-42-46.
[6] Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto, Jpn. J. Appl.Phys. Vol.(35)(1996) p.74-76.
[7] K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Applied Physics Letters 97, 013501 (2010); doi: 10.1063/1.3459139.
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Cite This Article
  • APA Style

    Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, et al. (2015). Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Science Research, 3(6), 300-303. https://doi.org/10.11648/j.sr.20150306.16

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    ACS Style

    Hla Myo Tun; Thant Zin Win; Kensuke Minami; Satomi Teraya; Koushi Okita, et al. Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Sci. Res. 2015, 3(6), 300-303. doi: 10.11648/j.sr.20150306.16

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    AMA Style

    Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, et al. Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Sci Res. 2015;3(6):300-303. doi: 10.11648/j.sr.20150306.16

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  • @article{10.11648/j.sr.20150306.16,
      author = {Hla Myo Tun and Thant Zin Win and Kensuke Minami and Satomi Teraya and Koushi Okita and Yusui Nakamura},
      title = {Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates},
      journal = {Science Research},
      volume = {3},
      number = {6},
      pages = {300-303},
      doi = {10.11648/j.sr.20150306.16},
      url = {https://doi.org/10.11648/j.sr.20150306.16},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sr.20150306.16},
      abstract = {ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.},
     year = {2015}
    }
    

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    T1  - Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates
    AU  - Hla Myo Tun
    AU  - Thant Zin Win
    AU  - Kensuke Minami
    AU  - Satomi Teraya
    AU  - Koushi Okita
    AU  - Yusui Nakamura
    Y1  - 2015/11/13
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    N1  - https://doi.org/10.11648/j.sr.20150306.16
    DO  - 10.11648/j.sr.20150306.16
    T2  - Science Research
    JF  - Science Research
    JO  - Science Research
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    EP  - 303
    PB  - Science Publishing Group
    SN  - 2329-0927
    UR  - https://doi.org/10.11648/j.sr.20150306.16
    AB  - ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.
    VL  - 3
    IS  - 6
    ER  - 

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Author Information
  • Department of Electronic Engineering, Mandalay Technological University, Mandalay Region, Republic of the Union of Myanmar

  • Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

  • Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan

  • Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan

  • Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan

  • Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan

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