,
Alioune Sow,
Mamadou Salif Mane,
Modou Faye,
El Hadji Mamadou Keita,
Amadou Ndiaye,
Bachirou Ndiaye,
Babacar Mbow,
Cheikh Sene
In this work, we have carried out a study in the modeling of photovoltaic devices based on lead-free perovskite materials, such as CH3NH3Sn(1-y)GeyI3, in which the germanium content varies from 0 to 1, using thin ZnO, TiO2 or SnO2, films as window layers. Thin Cu2O or NiO layers used as buffer layers ensure the n-p junction with the perovskite absorber material and act as an interface layer with the transport window layer. With the above window and buffer layer materials, photovoltaic devices have been designed. The study highlights the influence of geometric parameters such as the diffusion length of the minority carriers in the buffer layer as well as the thickness of this layer on the performance of photovoltaic devices. The evolution of the internal quantum efficiency is analyzed as a function of the window and buffer layer materials and also as a function of various other parameters including the thickness of the buffer layer materials and the minority carrier diffusion length in these materials. The results showed that NiO thin films offer better performances, especially when combined with ZnO or SnO2 window layers, respectively. The corresponding models with structures ZnO(n+)/NiO(n)/CH3NH3Sn0.75Ge0.25I3(p) and SnO2(n+)/NiO(n)/CH3NH3Sn0.75Ge0.25I3(p) give an internal quantum efficiency of 72.7% and 70.9% respectively.
| Published in | Advances in Materials (Volume 14, Issue 5) |
| DOI | 10.11648/j.am.20251405.12 |
| Page(s) | 95-104 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2025. Published by Science Publishing Group |
Perovskites, Modeling, Lead-free Perovskite Solar Cell
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APA Style
Seck, S., Sow, A., Mane, M. S., Faye, M., Keita, E. H. M., et al. (2025). Investigation on Buffer Layers Influence on the Internal Quantum Efficiency of CH3NH3Sn(1-y)GeyI3 Lead-Free Perovskite-Based Solar Cells. Advances in Materials, 14(5), 95-104. https://doi.org/10.11648/j.am.20251405.12
ACS Style
Seck, S.; Sow, A.; Mane, M. S.; Faye, M.; Keita, E. H. M., et al. Investigation on Buffer Layers Influence on the Internal Quantum Efficiency of CH3NH3Sn(1-y)GeyI3 Lead-Free Perovskite-Based Solar Cells. Adv. Mater. 2025, 14(5), 95-104. doi: 10.11648/j.am.20251405.12
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Download@article{10.11648/j.am.20251405.12,
author = {Saliou Seck and Alioune Sow and Mamadou Salif Mane and Modou Faye and El Hadji Mamadou Keita and Amadou Ndiaye and Bachirou Ndiaye and Babacar Mbow and Cheikh Sene},
title = {Investigation on Buffer Layers Influence on the Internal Quantum Efficiency of CH3NH3Sn(1-y)GeyI3 Lead-Free Perovskite-Based Solar Cells
},
journal = {Advances in Materials},
volume = {14},
number = {5},
pages = {95-104},
doi = {10.11648/j.am.20251405.12},
url = {https://doi.org/10.11648/j.am.20251405.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20251405.12},
abstract = {In this work, we have carried out a study in the modeling of photovoltaic devices based on lead-free perovskite materials, such as CH3NH3Sn(1-y)GeyI3, in which the germanium content varies from 0 to 1, using thin ZnO, TiO2 or SnO2, films as window layers. Thin Cu2O or NiO layers used as buffer layers ensure the n-p junction with the perovskite absorber material and act as an interface layer with the transport window layer. With the above window and buffer layer materials, photovoltaic devices have been designed. The study highlights the influence of geometric parameters such as the diffusion length of the minority carriers in the buffer layer as well as the thickness of this layer on the performance of photovoltaic devices. The evolution of the internal quantum efficiency is analyzed as a function of the window and buffer layer materials and also as a function of various other parameters including the thickness of the buffer layer materials and the minority carrier diffusion length in these materials. The results showed that NiO thin films offer better performances, especially when combined with ZnO or SnO2 window layers, respectively. The corresponding models with structures ZnO(n+)/NiO(n)/CH3NH3Sn0.75Ge0.25I3(p) and SnO2(n+)/NiO(n)/CH3NH3Sn0.75Ge0.25I3(p) give an internal quantum efficiency of 72.7% and 70.9% respectively.
},
year = {2025}
}
TY - JOUR T1 - Investigation on Buffer Layers Influence on the Internal Quantum Efficiency of CH3NH3Sn(1-y)GeyI3 Lead-Free Perovskite-Based Solar Cells AU - Saliou Seck AU - Alioune Sow AU - Mamadou Salif Mane AU - Modou Faye AU - El Hadji Mamadou Keita AU - Amadou Ndiaye AU - Bachirou Ndiaye AU - Babacar Mbow AU - Cheikh Sene Y1 - 2025/10/31 PY - 2025 N1 - https://doi.org/10.11648/j.am.20251405.12 DO - 10.11648/j.am.20251405.12 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 95 EP - 104 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20251405.12 AB - In this work, we have carried out a study in the modeling of photovoltaic devices based on lead-free perovskite materials, such as CH3NH3Sn(1-y)GeyI3, in which the germanium content varies from 0 to 1, using thin ZnO, TiO2 or SnO2, films as window layers. Thin Cu2O or NiO layers used as buffer layers ensure the n-p junction with the perovskite absorber material and act as an interface layer with the transport window layer. With the above window and buffer layer materials, photovoltaic devices have been designed. The study highlights the influence of geometric parameters such as the diffusion length of the minority carriers in the buffer layer as well as the thickness of this layer on the performance of photovoltaic devices. The evolution of the internal quantum efficiency is analyzed as a function of the window and buffer layer materials and also as a function of various other parameters including the thickness of the buffer layer materials and the minority carrier diffusion length in these materials. The results showed that NiO thin films offer better performances, especially when combined with ZnO or SnO2 window layers, respectively. The corresponding models with structures ZnO(n+)/NiO(n)/CH3NH3Sn0.75Ge0.25I3(p) and SnO2(n+)/NiO(n)/CH3NH3Sn0.75Ge0.25I3(p) give an internal quantum efficiency of 72.7% and 70.9% respectively. VL - 14 IS - 5 ER -
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
Department of Physics, Cheikh Anta Diop University, Dakar, Senegal
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