Two-dimensional (2D) materials have emerged as pivotal components in the evolution of next-generation semiconductor devices, offering unique electronic, optical, and mechanical properties that surpass those of traditional bulk materials. Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, exhibits exceptional electrical and thermal conductivities, making it a promising candidate for high-speed transistors and interconnects. Transition metal dichalco-genide (TMD) monolayers, such as MoS₂, exhibit a direct bandgap in their monolayer form, enabling efficient light absorption and emission. This property is harnessed in applications like photo detectors and light-emitting devices. Carbon nanotubes (CNTs), cylindrical structures composeheets, serve as excellent candidates for interconnects due to their high current-carrying capacity and resistance to electromigration. The integration of these 2D materials into semiconductor devices necessitates overcoming challenges related to material synthesis, device fabrication, and integration with existing technologies.

Semiconductor, Device Fabrication, Photo Detectors