WO₂.₇₂ thin films were deposited on fluorine-doped tin oxide substrates using e-beam evaporation and subjected to low-energy ion implantation using 150 keV Ti⁺ and Ni⁺ ions at varying fluences. Structural analysis, including X-ray diffraction (XRD) and Raman spectroscopy, confirmed the presence of the P2₁/m monoclinic phase in pristine films. However, post-implantation studies revealed a significant degradation in crystallinity, with increasing fluence leading to amorphization in Ni-implanted films. Atomic force microscopy (AFM) indicated notable changes in grain size, surface realignment, and roughness. Optical studies demonstrated a redshift in the calculated bandgap for Ti-implanted films due to bandgap narrowing, while Ni implantation resulted in a blueshift of new near-ultraviolet (NUV) emission peaks, at-tributed to enhanced free electron concentration in the conduction band. Photoluminescence (PL) analysis showed a reduction in PL intensity after implantation due to increased nonradiative and Auger recombination effects. Electrical characterization revealed a semiconductor-to-metal transition in Ti-implanted films at the highest fluence, accompanied by a decrease in resistivity, carrier concentration, and enhanced mobility, governed by various scattering mechanisms. The Commission Internationale de l’Éclairage (CIE) diagram illustrated a transition in emission color from light to deep blue upon Ni implantation. These findings provide insights into the tunability of structural, optical, and electrical properties of WO₂.₇₂ thin films through controlled ion implantation.

Ion Implantation, WO₂.₇₂ Thin Films, Structural Modification, Optical Properties, Semiconduc-tor-to-metal Transition