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The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals

Received: 5 December 2017     Accepted: 18 December 2017     Published: 11 January 2018
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Abstract

As a virtual experimental device for research and the modelling of grown-in microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.

Published in Engineering and Applied Sciences (Volume 3, Issue 1)
DOI 10.11648/j.eas.20180301.11
Page(s) 1-5
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Silicon, Grown-in Microdefects, Diffusion Model, Software

References
[1] H. G. van Bueren, Imperfections in crystals. Amsterdam: North-Holland Publ. Company, 1960.
[2] P. Capper, "Bulk crystal growth - methods and materials." In Springer Handbook of Electronic and Photonic Materials, edited by P. Capper, and S. Kasap, 231-254. Leipzig: Springer US, 2006.
[3] V. I. Talanin, I. E. Talanin. “Diffusion model of the formation of growth microdefects: a new approach to defect formation in crystals (review).” Physics of the Solid State 58 (2016): 427-437.
[4] V. I. Talanin, I. E. Talanin, A. A. Voronin. “About formation of grown-in microdefects in dislocation-free silicon single crystals.” Can. J. Phys. 85 (2007): 1459-1471.
[5] K. Nakamura, T. Saishoji, J. Tomioka, “Grown-in defects in silicon crystals”, J. Cryst. Growth. Vol. 237-239, No. 10, 2002, pp. 1678-1684.
[6] M. Tilli, A. Haapalinna. “Properties of silicon.” In: Handbook of silicon based MEMS materials and technologies, edited by V. Lindroos, M. Tilli, A. Lehto, and T. Motooka, 3-17. Oxford: Elsevier Publ., Inc., 2010.
[7] V. I. Talanin, I. E. Talanin, “Mechanism of formation and physical classification of the grown-in microdefects in semiconductor silicon”, Defect & Diffusion Forum, Vol. 230-232, No. 1, 2004, pp. 177-198.
[8] V. I. Talanin, I. E. Talanin, “Formation of grown-in microdefects in dislocation-free silicon monocrystals”, In: Ed. T. B. Elliot, New research on semiconductors, Nova Science Publishers, Inc., New York, 2006, pp. 31-67.
[9] V. I. Talanin, I. E. Talanin, “On the recombination of intrinsic point defects in dislocation-free silicon single crystals”, Phys. Solid State, Vol. 49, No. 3, 2007, pp. 467-470.
[10] V. I. Talanin, I. E. Talanin. “The diffusion model of grown-in microdefects formation during crystallization of dislocation-free silicon single crystals.” In: Advances in crystallization processes edited by Y. Mastai, 611-632. Rijeka: INTECH Publ., 2012.
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  • APA Style

    Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. (2018). The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals. Engineering and Applied Sciences, 3(1), 1-5. https://doi.org/10.11648/j.eas.20180301.11

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    ACS Style

    Vitalyi Igorevich Talanin; Igor Evgenievich Talanin; Vladislav Igorevich Lashko. The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals. Eng. Appl. Sci. 2018, 3(1), 1-5. doi: 10.11648/j.eas.20180301.11

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    AMA Style

    Vitalyi Igorevich Talanin, Igor Evgenievich Talanin, Vladislav Igorevich Lashko. The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals. Eng Appl Sci. 2018;3(1):1-5. doi: 10.11648/j.eas.20180301.11

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  • @article{10.11648/j.eas.20180301.11,
      author = {Vitalyi Igorevich Talanin and Igor Evgenievich Talanin and Vladislav Igorevich Lashko},
      title = {The New Software for Research and the Modelling of Grown-in Microdefects in Dislocation-Free Silicon Single Crystals},
      journal = {Engineering and Applied Sciences},
      volume = {3},
      number = {1},
      pages = {1-5},
      doi = {10.11648/j.eas.20180301.11},
      url = {https://doi.org/10.11648/j.eas.20180301.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.eas.20180301.11},
      abstract = {As a virtual experimental device for research and the modelling of grown-in microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.},
     year = {2018}
    }
    

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    AU  - Vitalyi Igorevich Talanin
    AU  - Igor Evgenievich Talanin
    AU  - Vladislav Igorevich Lashko
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    AB  - As a virtual experimental device for research and the modelling of grown-in microdefects formation in dislocation-free silicon single crystals the software is proposed. The software is built on the basis on diffusion model of grown-in microdefects formation and allows the use of computer to investigate the defect structure of silicon monocrystals with a diameter up to 400 mm.
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    IS  - 1
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Author Information
  • Department of Computer Science & Software Development, Institute of Economics & Information Technologies, Zaporozhye, Ukraine

  • Department of Computer Science & Software Development, Institute of Economics & Information Technologies, Zaporozhye, Ukraine

  • Department of Computer Science & Software Development, Institute of Economics & Information Technologies, Zaporozhye, Ukraine

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