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Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications

Received: 23 June 2016     Accepted: 7 July 2016     Published: 28 July 2016
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Abstract

In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.

Published in Advances in Materials (Volume 5, Issue 4)
DOI 10.11648/j.am.20160504.11
Page(s) 18-22
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

Chalcogenide Materials, Phase Change Memory, Crystallization Temperature, Transition Temperature

References
[1] Aggarwal I. D, and Sanghera J. S.(2002) Development and applications of chalcogenide glass optical fibers. Journal of Optoelectronics and Advanced Materials 4: 665-678.
[2] Asokan, S. Prasad, M. V. N. Parthasarathy G and Gopal E. S. R. (1989), Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Physics Review Letters 62: 808.
[3] Balasubramanian S. and Rao, K. J. (1994). A molecular dynamics study of atomic correlations in glassy B2S3, Journal of Physical Chemistry 98: 9216-9221.
[4] Burr, G. W., Breitwisch, M. J., Francheschini, M., Garetto, D., Goparakrishna, K., Jackson, B., Kurdi, B., Lam, C., Lastras, L. A., Padilla, A., Rajidan, B., Raoux, S. and Shenoy, R. S. (2010). “Phase change memory technology”. Journal of Vacuum Science and Technology 28: 223-262.
[5] Chung, K. M., Wamwangi, D., Woda, M., Wuttig, M. and Bensch W. (2008). Investigation of SnSe, SnSe2 and Sn2Se3 alloys for phase change memory application. Journal of Applied Physics 10 (8): 083523.
[6] Friedrich, I., Weidenhof, V., Njoroge, W., Franz, P. and Wuttig, M., (2000). Structural transformation of Ge2Sb2Te5 films studied by electrical resistance measurements. Journal of applied physics 87: 4130-4134.
[7] Kolobov, A. V., Fons, P., Tominaga, J., Frenkel, A. I., Ankudinov, A. I., Yannopoulos, S. N., Andrikopoulos, K. S. and Uruga, p. (2005). Why phase media are fast and stable: A new approach to an old problem, Japanese Journal of Applied Physics 44: 3345-3349.
[8] Kumar J, Ahmad M., Chander R, Thangaraj R, and Sathiaraj T. S. (2008) Phase segregation in Pb: GeSbTe chalcogenide system The European Physical Journal Applied Physics 41: 13.
[9] Lathrop D. and Eckert, H.(1989). Chemical Disorder in Non-Oxide Chalcogenide Glasses. Site Speciation in the System Phosphorus-Selenium by Magic Angle Spinning NMR at Very High Spinning Speeds Journal of Physical Chemistry 93: 7895-7902.
[10] Rao K. J. and Mohan R.(1980) Glass transition in As Se glasses, Journal of Physical Chemistry 84: 1917.
[11] Shukla, R., Agarwal, P. and Kumar, A. (2010). Crystallization kinetics in glassy Se100-xInx system using iso-conversional methods. Chalcogenide letters. 7: 249-255.
[12] Suri N, Bindra K, and Thangaraj R. (2006) Electrical conduction and photoconduction in Se80-xTe20Bix thin films Journal of Physics: Condensed Matter 18: 9129.
[13] Tanaka K, (1989) Structural phase transitions in chalcogenide glasses. Physical Review B 39: 1270.
Cite This Article
  • APA Style

    Irene W. Muchira, Walter K. Njoroge, Patrick M. Karimi. (2016). Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications. Advances in Materials, 5(4), 18-22. https://doi.org/10.11648/j.am.20160504.11

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    ACS Style

    Irene W. Muchira; Walter K. Njoroge; Patrick M. Karimi. Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications. Adv. Mater. 2016, 5(4), 18-22. doi: 10.11648/j.am.20160504.11

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    AMA Style

    Irene W. Muchira, Walter K. Njoroge, Patrick M. Karimi. Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications. Adv Mater. 2016;5(4):18-22. doi: 10.11648/j.am.20160504.11

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  • @article{10.11648/j.am.20160504.11,
      author = {Irene W. Muchira and Walter K. Njoroge and Patrick M. Karimi},
      title = {Kinetic Analysis of Crystallization Processes in In60Se40 Thin Films for Phase Change Memory (Pram) Applications},
      journal = {Advances in Materials},
      volume = {5},
      number = {4},
      pages = {18-22},
      doi = {10.11648/j.am.20160504.11},
      url = {https://doi.org/10.11648/j.am.20160504.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20160504.11},
      abstract = {In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.},
     year = {2016}
    }
    

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    AU  - Irene W. Muchira
    AU  - Walter K. Njoroge
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    Y1  - 2016/07/28
    PY  - 2016
    N1  - https://doi.org/10.11648/j.am.20160504.11
    DO  - 10.11648/j.am.20160504.11
    T2  - Advances in Materials
    JF  - Advances in Materials
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    PB  - Science Publishing Group
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    UR  - https://doi.org/10.11648/j.am.20160504.11
    AB  - In the present work, a systematic investigation of crystallization kinetics of In60Se40 alloy has been made. Thin films of In60Se40 alloy were prepared by thermal evaporation using Edward Auto 306 evaporation system. Electrical measurements at room temperature and upon annealing at different heating rates were done by four point probe method using Keithley 2400 source meter interfaced with computer using Lab View software. The dependence of sheet resistance on temperature showed a sudden drop in resistance at a specific temperature corresponding to the transition temperature at which the alloy change from amorphous to crystalline. The transition temperature was also found to increase with the heating rates. From the heating rate dependence of peak crystallization temperature (Tp) the activation energy for crystallization was determined using the Kissinger analysis. The films were found to have an electrical contrast of about six orders of magnitude between the as-deposited and the annealed states, a good quality for PRAM applications. The activation energies were determined to be 0.354 ± 0.018 eV.
    VL  - 5
    IS  - 4
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Author Information
  • Department of Electrical and Electronics Engineering, Kirinyaga University College, Kerugoya, Kenya

  • Department of Physics, Kenyatta University, Nairobi, Kenya

  • Institute of Energy Studies and Research, Nairobi, Kenya

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