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Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur

Received: 7 February 2018     Accepted: 21 March 2018     Published: 14 June 2018
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Abstract

On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.

Published in American Journal of Physics and Applications (Volume 6, Issue 3)
DOI 10.11648/j.ajpa.20180603.12
Page(s) 76-79
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Silicon, Electrically Neutral Chemically Bound Complexes, Impurity Centers, Sulfur, Nickel, Transition Metals

References
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[3] M. K. Bahadyrhanov, Sh. I. Askarov, N. Norkulov, A. Hamidov, Heorganicheskiematerialy, 32, 15 (1996).
[4] M. Yoshida, K. Saito, Appl, Phys., Japan, 6,573 (1967).
[5] M. K. Bahadyrhanov, S. Zaynobidinov, A. T. Teshaboev, M. A. Hodzhaeva, FTP, 10.1001 (1976).
[6] M. K. Bahadyrkhanov, S. Zainobidinov, FIT, 12,683 (1978).
[7] G. Wudbury, J. Ludwig, Sat. articles: Electron spin resonance in semiconductors. IL, M. (1968).
[8] M. Steger, A. Yang, MLWThewalt, M. Kardona, H. Riemann, NVAbrosimov, MFChurbanov, AVGusev, ADBulanov, IDKovalev, AKKalliteevskii, ONGodisov, P. Becker, HJPohe , EEHaller, JWAger, III. Phus. Rev. B, 80,115204 (2009).
[9] Yu. A. Astrov, L. M. Portsel, A. L. Lodygin, V. B. Shuman Semicond. Sci. Tehnol. 26,055.021 (2011).
[10] V. B. Shuman, A. A. Mahova, Yu. Ayu Astrov, Ayu My Ivanov, A, N. Lodygin, FTP, 46.993, (2012).
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  • APA Style

    Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista. (2018). Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. American Journal of Physics and Applications, 6(3), 76-79. https://doi.org/10.11648/j.ajpa.20180603.12

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    ACS Style

    Shaikrom Askarov; Sharipov Bashirulla; Srazhev Solizhon; Toshboev Tuchi; Salieva Shokhista. Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. Am. J. Phys. Appl. 2018, 6(3), 76-79. doi: 10.11648/j.ajpa.20180603.12

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    AMA Style

    Shaikrom Askarov, Sharipov Bashirulla, Srazhev Solizhon, Toshboev Tuchi, Salieva Shokhista. Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur. Am J Phys Appl. 2018;6(3):76-79. doi: 10.11648/j.ajpa.20180603.12

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  • @article{10.11648/j.ajpa.20180603.12,
      author = {Shaikrom Askarov and Sharipov Bashirulla and Srazhev Solizhon and Toshboev Tuchi and Salieva Shokhista},
      title = {Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur},
      journal = {American Journal of Physics and Applications},
      volume = {6},
      number = {3},
      pages = {76-79},
      doi = {10.11648/j.ajpa.20180603.12},
      url = {https://doi.org/10.11648/j.ajpa.20180603.12},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20180603.12},
      abstract = {On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.},
     year = {2018}
    }
    

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  • TY  - JOUR
    T1  - Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur
    AU  - Shaikrom Askarov
    AU  - Sharipov Bashirulla
    AU  - Srazhev Solizhon
    AU  - Toshboev Tuchi
    AU  - Salieva Shokhista
    Y1  - 2018/06/14
    PY  - 2018
    N1  - https://doi.org/10.11648/j.ajpa.20180603.12
    DO  - 10.11648/j.ajpa.20180603.12
    T2  - American Journal of Physics and Applications
    JF  - American Journal of Physics and Applications
    JO  - American Journal of Physics and Applications
    SP  - 76
    EP  - 79
    PB  - Science Publishing Group
    SN  - 2330-4308
    UR  - https://doi.org/10.11648/j.ajpa.20180603.12
    AB  - On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.
    VL  - 6
    IS  - 3
    ER  - 

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Author Information
  • Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan

  • Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan

  • Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan

  • Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan

  • Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan

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