Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec.
| Published in | American Journal of Science, Engineering and Technology (Volume 8, Issue 4) |
| DOI | 10.11648/j.ajset.20230804.15 |
| Page(s) | 206-209 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2023. Published by Science Publishing Group |
Crystal Growth, Tl4In3GaS8, DC Electrical Conductivity, Hall Coefficient, Characterization of Semiconducting Quaternary Compounds
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APA Style
Abdullah Mohammed Abdulwahed, J. (2023). Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. American Journal of Science, Engineering and Technology, 8(4), 206-209. https://doi.org/10.11648/j.ajset.20230804.15
ACS Style
Abdullah Mohammed Abdulwahed, J. Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. Am. J. Sci. Eng. Technol. 2023, 8(4), 206-209. doi: 10.11648/j.ajset.20230804.15
AMA Style
Abdullah Mohammed Abdulwahed J. Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. Am J Sci Eng Technol. 2023;8(4):206-209. doi: 10.11648/j.ajset.20230804.15
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Download@article{10.11648/j.ajset.20230804.15,
author = {Jazi Abdullah Mohammed Abdulwahed},
title = {Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals},
journal = {American Journal of Science, Engineering and Technology},
volume = {8},
number = {4},
pages = {206-209},
doi = {10.11648/j.ajset.20230804.15},
url = {https://doi.org/10.11648/j.ajset.20230804.15},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajset.20230804.15},
abstract = {Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec.
},
year = {2023}
}
TY - JOUR T1 - Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals AU - Jazi Abdullah Mohammed Abdulwahed Y1 - 2023/11/09 PY - 2023 N1 - https://doi.org/10.11648/j.ajset.20230804.15 DO - 10.11648/j.ajset.20230804.15 T2 - American Journal of Science, Engineering and Technology JF - American Journal of Science, Engineering and Technology JO - American Journal of Science, Engineering and Technology SP - 206 EP - 209 PB - Science Publishing Group SN - 2578-8353 UR - https://doi.org/10.11648/j.ajset.20230804.15 AB - Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec. VL - 8 IS - 4 ER -
Physics Department, Umm Al-Qura University College, Qunfudah, KSA
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