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Fabrication of Sintered Si Nano-polycrystalline with Reduced Si Nanoparticles and Properties of Photoluminescence in Visible Regime for Sintered Si Nano-polycrystalline by Violet Light Excitation

Received: 6 August 2015     Accepted: 17 August 2015     Published: 24 August 2015
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Abstract

Si oxide powder is reduced by highly repetitive pulse laser ablation in liquid, and Si nanoparticles are produced efficiently with a low cost in a short time. A Si nanopaste with highly doped Si nanoparticles was sintered by using a hot plate. We succeeded in fabricating a sintered Si nano-polycrystalline for the first time. The structure and components of the fabricated sintered Si nano-polycrystalline were investigated by SEM and EDX analysis. Furthermore, the reduced Si nanoparticles and the sintered Si nano-polycrystalline were excited by violet light and stable photoluminescence (PL), which were observed in the visible regime. The peak wavelengths of the PL were 550 nm and 560 nm. Particularly, the intensity of the observed PL of the sintered Si nano-polycrystalline was five times higher than that of the reduced Si nanoparticles powder. This result is attributed to the PL being amplified inside the sintered Si nano polycrystalline. These experiments show that because the mean diameters of the Si nanocrystals in the reduced Si nanoparticles were below 2 nm, the structure of the Si nanocrystals changed to a direct-transition type; the bandgap energy of the Si nanocrystals changed from 1.1 eV to 2.25 eV, and PL in the visible regime was generated. Moreover, the possibility of Si photonics is discussed. The sintered Si nano-polycrystalline will be applicable to light waveguides, optical switches using a free carrier effect, and light amplifiers

Published in American Journal of Nano Research and Applications (Volume 3, Issue 5)
DOI 10.11648/j.nano.20150305.11
Page(s) 82-88
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

SiO2, Si, Nanoparticles, Polycrystalline, Optical Waveguide, Optical Switch, Free Carrier Effect, Light Amplification, Photoluminescence, Laser Ablation in Liquids

References
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[3] K. Saitow and T. Yamamura, “Effective Cooling Generates Efficient Emission: Blue, Green, and Red Light-Emitting Si Nanocrystals”, J. Phys. Chem. C, 113(19), pp.8465-8470 (2009).
[4] N. Suzuki, Y. Yamada, T. Makino, T. Yoshida, “Laser Processing for Fabrication of Silicon Nanoparticles and Quantum Dot Functional Structures”, The Review of Laser Engineering, 31(8), pp.548-551 [in Japanese] (2003).
[5] I. Umezu, A. Sugimura, M. Inada, T. Makino, K. Matsumoto, and M. Takata, "Formation of Nanoscale Fine-Structured Silicon by Pulsed Laser Ablation in Hydrogen Background Gas", Phys. Rev. B, 76, 045328-1-10 (2007).
[6] M. Hirasawa, T. Orii, and T. Seto, “Synthesis of Visible-Light Emitting Si Nanoparticles by Laser Nano-prototyping”, J. of Aerosol Res., 20, pp.103-107 [in Japanese] (2005).
[7] T. Saiki, T. Okada, K. Nakamura, T. Karita, Y. Nishikawa, and Y. Iida, “Air Cells Using Negative Metal Electrodes Fabricated by Sintering Pastes with Base Metal Nanoparticles for Efficient Utilization of Solar Energy”, Int. J. of Energy Science, 2(6), pp. 228-234 (2012).
[8] L. Brus, “Electrinic Wave Functions in Semiconductor Clusters: Experiment and Theory”, J. Phys. Chem., 90, pp.2555-2560 (1986).
[9] N. Hill and K. Whaley, “Size Dependence of Excitations in Silicon Nanocrystals”, Phy. Rev. Lett., 75, pp.1130-1133 (1995).
[10] H. Kobayashi, Y. Iida, and Y. Omura, ”Single-Mode Silicon Optical Switch with T-Shaped SiO2 Optical Waveguide as a Control Gate”, Jpn. J. Appl. Phys., 41, pp.2563-2565 (2002).
[11] D. K. Schroder, R. N. Thomas, and J. C. Swartz, “Free Carrier Absorption in Silicon”, IEEE J. of Solid-state Circuits, SC-13, pp.180-187 (1978).
[12] R. A. Soref and B. R. Bennet, “Electrooptical Effects in Silicon”, IEEE J. Q. E., 23(1), pp.123-129 (1987).
[13] L. R. Nuenes, T. K. Liang, K. S. Abedin, D. V. Thourhout, P. Dumon, R. Baets, H. K.Tsang, T. Miyazaki, and M. Tsuchiya, “Low Energy Ultrafast Switching in Silicon Wire Wavegide”, ECOC 2005, 25-29 Sep. Glasgow, Scotland, Proceedings, 6, Paper Th 4.2.3.
[14] R. Terawaki, Y. Takahashi, M. Chihara, Y. Inui, and S. Noda, “Ultrahigh-Q Photonic Crystal Nanocavities in Wide Optical Telecommunication Bands“, Opt. Express, 20(20), pp. 22743-22752 (2012).
[15] E. D. Palik, “Handbook of Optical Constants of Solids III“, Academic Press, Massachusetts (1998) p529.
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    Taku Saiki, Yukio Iida. (2015). Fabrication of Sintered Si Nano-polycrystalline with Reduced Si Nanoparticles and Properties of Photoluminescence in Visible Regime for Sintered Si Nano-polycrystalline by Violet Light Excitation. American Journal of Nano Research and Applications, 3(5), 82-88. https://doi.org/10.11648/j.nano.20150305.11

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    ACS Style

    Taku Saiki; Yukio Iida. Fabrication of Sintered Si Nano-polycrystalline with Reduced Si Nanoparticles and Properties of Photoluminescence in Visible Regime for Sintered Si Nano-polycrystalline by Violet Light Excitation. Am. J. Nano Res. Appl. 2015, 3(5), 82-88. doi: 10.11648/j.nano.20150305.11

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    AMA Style

    Taku Saiki, Yukio Iida. Fabrication of Sintered Si Nano-polycrystalline with Reduced Si Nanoparticles and Properties of Photoluminescence in Visible Regime for Sintered Si Nano-polycrystalline by Violet Light Excitation. Am J Nano Res Appl. 2015;3(5):82-88. doi: 10.11648/j.nano.20150305.11

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  • @article{10.11648/j.nano.20150305.11,
      author = {Taku Saiki and Yukio Iida},
      title = {Fabrication of Sintered Si Nano-polycrystalline with Reduced Si Nanoparticles and Properties of Photoluminescence in Visible Regime for Sintered Si Nano-polycrystalline by Violet Light Excitation},
      journal = {American Journal of Nano Research and Applications},
      volume = {3},
      number = {5},
      pages = {82-88},
      doi = {10.11648/j.nano.20150305.11},
      url = {https://doi.org/10.11648/j.nano.20150305.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20150305.11},
      abstract = {Si oxide powder is reduced by highly repetitive pulse laser ablation in liquid, and Si nanoparticles are produced efficiently with a low cost in a short time. A Si nanopaste with highly doped Si nanoparticles was sintered by using a hot plate. We succeeded in fabricating a sintered Si nano-polycrystalline for the first time. The structure and components of the fabricated sintered Si nano-polycrystalline were investigated by SEM and EDX analysis. Furthermore, the reduced Si nanoparticles and the sintered Si nano-polycrystalline were excited by violet light and stable photoluminescence (PL), which were observed in the visible regime. The peak wavelengths of the PL were 550 nm and 560 nm. Particularly, the intensity of the observed PL of the sintered Si nano-polycrystalline was five times higher than that of the reduced Si nanoparticles powder. This result is attributed to the PL being amplified inside the sintered Si nano polycrystalline. These experiments show that because the mean diameters of the Si nanocrystals in the reduced Si nanoparticles were below 2 nm, the structure of the Si nanocrystals changed to a direct-transition type; the bandgap energy of the Si nanocrystals changed from 1.1 eV to 2.25 eV, and PL in the visible regime was generated. Moreover, the possibility of Si photonics is discussed. The sintered Si nano-polycrystalline will be applicable to light waveguides, optical switches using a free carrier effect, and light amplifiers},
     year = {2015}
    }
    

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  • TY  - JOUR
    T1  - Fabrication of Sintered Si Nano-polycrystalline with Reduced Si Nanoparticles and Properties of Photoluminescence in Visible Regime for Sintered Si Nano-polycrystalline by Violet Light Excitation
    AU  - Taku Saiki
    AU  - Yukio Iida
    Y1  - 2015/08/24
    PY  - 2015
    N1  - https://doi.org/10.11648/j.nano.20150305.11
    DO  - 10.11648/j.nano.20150305.11
    T2  - American Journal of Nano Research and Applications
    JF  - American Journal of Nano Research and Applications
    JO  - American Journal of Nano Research and Applications
    SP  - 82
    EP  - 88
    PB  - Science Publishing Group
    SN  - 2575-3738
    UR  - https://doi.org/10.11648/j.nano.20150305.11
    AB  - Si oxide powder is reduced by highly repetitive pulse laser ablation in liquid, and Si nanoparticles are produced efficiently with a low cost in a short time. A Si nanopaste with highly doped Si nanoparticles was sintered by using a hot plate. We succeeded in fabricating a sintered Si nano-polycrystalline for the first time. The structure and components of the fabricated sintered Si nano-polycrystalline were investigated by SEM and EDX analysis. Furthermore, the reduced Si nanoparticles and the sintered Si nano-polycrystalline were excited by violet light and stable photoluminescence (PL), which were observed in the visible regime. The peak wavelengths of the PL were 550 nm and 560 nm. Particularly, the intensity of the observed PL of the sintered Si nano-polycrystalline was five times higher than that of the reduced Si nanoparticles powder. This result is attributed to the PL being amplified inside the sintered Si nano polycrystalline. These experiments show that because the mean diameters of the Si nanocrystals in the reduced Si nanoparticles were below 2 nm, the structure of the Si nanocrystals changed to a direct-transition type; the bandgap energy of the Si nanocrystals changed from 1.1 eV to 2.25 eV, and PL in the visible regime was generated. Moreover, the possibility of Si photonics is discussed. The sintered Si nano-polycrystalline will be applicable to light waveguides, optical switches using a free carrier effect, and light amplifiers
    VL  - 3
    IS  - 5
    ER  - 

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Author Information
  • Department of Electrical and Electronic Engineering, Faculty of Engineering Science, Kansai University, Osaka, Japan

  • Department of Electrical and Electronic Engineering, Faculty of Engineering Science, Kansai University, Osaka, Japan

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