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Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules

Received: 30 May 2013     Published: 10 July 2013
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Abstract

An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions. The cur-rent-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 380). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0C and 600C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50oC reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively.

Published in International Journal of Renewable and Sustainable Energy (Volume 2, Issue 4)
DOI 10.11648/j.ijrse.20130204.12
Page(s) 140-146
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Thin Film, Module, A-Si, CIS, Temperature Coefficient, Tilt Angle

References
[1] M C Alonso García, J.L. Balenzategui, "Estimation of photovoltaic module yearly temperature and performance based on nominal operation cell temperature calculations", Renewable Energy 29 (2004) pp.1997-2010
[2] V. Perraki, and V. Georgitsas, "Seasonal performance of monocrystalline silicon modules in a Mediterranean site", 25th EUPVSEC and 5th WCPVEC, Valencia 2010, pp 4281- 4284
[3] Takuro Ihara, Hironori Nishihara, Fuji Electric review Vol. 49, No 2, pp 49-54
[4] K Akhmad, H Okamoto, F Yamamoto, A Kitamura, "Long term performance modelling of amorphous silicon photovoltaic module", Jpn. J. Appl. Phys. Part 1, Regular papers short
[5] A J Car, T L Pryor, "A comparison of the performance of different PV module types in temperature climates", Solar Energy 76 (2004), pp. 285-294
[6] Anatoli Chatzipanagi,Francesco Frontini, Sebastian Dittmann, Investigation of the influence of module working temperature on the performance of BIPV modules, 27th EUPVSEC 2012,pp 4192-4197
[7] W Mieke, "Hot climate performance comparison between poly-crystalline and amorphous silicon cells connected to an utility mini-grid". Proceedings of Solar 98, 36th Annual Conference of the Australian and New Zealand Solar Energy Society, Christchurch, New Zealand, 1998, pp. 464- 470.
[8] V.Perraki and G.Tsolkas "Evaluating PV System Performance of four different module technologies" 27th EUPVSEC, Hamburg, 2012, pp 4236-4239.
[9] J Merten, J Andreu , "Clear separation of seasonal effects on the performance of amorphous silicon solar modules by outdoor I-V measurements" Solar Energy Materials & Solar Cells, 52 (1998), pp11-25
[10] T Carlsson, "Experimental Setup of Full Scale Field Tests of CdTe and CIS Thin Film PV Modules", Master Thesis, Teknillinen Korkeakoulou, 2001
[11] Solveig Roschier, "Development of procedures for performance measurements and lifetime testing on thin film photovoltaic devices", Thesis, Helsinki University, Finland, 2002
[12] PV* SOL Expert 4.5 ,Valentin Energie Software
[13] Kandil M. Kandil, Majida S. Altouq, Asma M. Al-assad, Latifa M. Alshamari, Ibrahim M. Kadad, Adel A. Ghoneim, "Investigation of performance of CIS PV modules under different environmental conditions", Smart Grid and Renewable Energy, 2011, 2,375-387
[14] Matthew.T. Boyd, Douglas T. Reindl and Brian P. Dougherty,"Evaluation and validation of equivalent circuit photovoltaic solar cell performance models",Journal of Solar Energy Engineering,vol 133,2011.
[15] G. Makridis, B. Zinsser, M. Norton and G. Georgiou, "Performance of photovoltaics under actual operating conditions", www.intechopen.com, Technology » "Third Generation Photovoltaics", edited by V.Fthenakis, ISBN 978-953-51-0304-2, Published: March 16, 2012, pp 201-223.
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    V. Perraki, G. Tsolkas. (2013). Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules. International Journal of Sustainable and Green Energy, 2(4), 140-146. https://doi.org/10.11648/j.ijrse.20130204.12

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    ACS Style

    V. Perraki; G. Tsolkas. Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules. Int. J. Sustain. Green Energy 2013, 2(4), 140-146. doi: 10.11648/j.ijrse.20130204.12

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    AMA Style

    V. Perraki, G. Tsolkas. Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules. Int J Sustain Green Energy. 2013;2(4):140-146. doi: 10.11648/j.ijrse.20130204.12

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  • @article{10.11648/j.ijrse.20130204.12,
      author = {V. Perraki and G. Tsolkas},
      title = {Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules},
      journal = {International Journal of Sustainable and Green Energy},
      volume = {2},
      number = {4},
      pages = {140-146},
      doi = {10.11648/j.ijrse.20130204.12},
      url = {https://doi.org/10.11648/j.ijrse.20130204.12},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijrse.20130204.12},
      abstract = {An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions.  The cur-rent-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 380). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0C and 600C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50oC reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively.},
     year = {2013}
    }
    

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  • TY  - JOUR
    T1  - Temperature Dependence on the Photovoltaic Properties of Selected Thin-Film Modules
    AU  - V. Perraki
    AU  - G. Tsolkas
    Y1  - 2013/07/10
    PY  - 2013
    N1  - https://doi.org/10.11648/j.ijrse.20130204.12
    DO  - 10.11648/j.ijrse.20130204.12
    T2  - International Journal of Sustainable and Green Energy
    JF  - International Journal of Sustainable and Green Energy
    JO  - International Journal of Sustainable and Green Energy
    SP  - 140
    EP  - 146
    PB  - Science Publishing Group
    SN  - 2575-1549
    UR  - https://doi.org/10.11648/j.ijrse.20130204.12
    AB  - An important requirement in the employment of the different existing PV technologies is the understanding of the performance exhibited by each technology, once installed outdoors. Such records are necessary since the outdoor PV electrical characteristics are different from those corresponding to STC (which rarely occurs outdoors) information listed in manufacturer data-sheets. Therefore the PV monitoring and evaluations, under different environmental conditions, are indispensable for the architects and PV systems installers, in order to accurately size the installations. In this paper the influence of temperature on the photovoltaic parameters of amorphous silicon (a-Si) and copper indium diselenide (CIS) thin film modules has been investigated, as well as the energy produced under actual operating conditions.  The cur-rent-voltage characteristics and maximum power have been recorded at regular intervals, for one year in the Mediterranean climate city of Patras, Greece (latitude 380). Patras averages over 4.2 peak sun hours (PSH) per day and module working temperatures between 16 0C and 600C. Our results have shown that, the percentage reduction of the open circuit voltage with temperature increase is greater for the CIS than for the a-Si modules. The short circuit current temperature coefficient for the CIS modules is positive at low and medium temperatures, though over the entire range of working temperature remains approximately constant with a slight tendency to reduce. The maximum power decreases almost linearly, while the efficiency for temperatures higher than 50oC reduces sharply. It is remarkable that with respect to the temperature increase the a-Si modules efficiency remains very near to the rated value, and the short circuit current temperature coefficient and the power coefficient are positive. The fill factor for these modules decreases linearly and equally as a function of temperature. The series and parallel resistance for the a-Si decrease slightly with temperature increase, whereas for the CIS the series resistance increases and the parallel resistance decreases in a more pronounced way. Maximum year-round energy production corresponds to the tilt angles of about 20 and 50 degrees in the summer and winter respectively.
    VL  - 2
    IS  - 4
    ER  - 

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Author Information
  • Department of Electrical and Computer Engineering, University of Patras, 26110 Patras, Greece

  • Department of Electrical and Computer Engineering, University of Patras, 26110 Patras, Greece

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