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Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz

Received: 4 July 2017     Accepted: 17 July 2017     Published: 11 August 2017
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Abstract

In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4~5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.

Published in International Journal of Materials Science and Applications (Volume 6, Issue 5)
DOI 10.11648/j.ijmsa.20170605.11
Page(s) 230-234
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Terahertz, Quantum Cascade Lasers, Indirect Injection

References
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Cite This Article
  • APA Style

    Tsung-Tse Lin, Hideki Hirayama. (2017). Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. International Journal of Materials Science and Applications, 6(5), 230-234. https://doi.org/10.11648/j.ijmsa.20170605.11

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    ACS Style

    Tsung-Tse Lin; Hideki Hirayama. Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. Int. J. Mater. Sci. Appl. 2017, 6(5), 230-234. doi: 10.11648/j.ijmsa.20170605.11

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    AMA Style

    Tsung-Tse Lin, Hideki Hirayama. Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz. Int J Mater Sci Appl. 2017;6(5):230-234. doi: 10.11648/j.ijmsa.20170605.11

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  • @article{10.11648/j.ijmsa.20170605.11,
      author = {Tsung-Tse Lin and Hideki Hirayama},
      title = {Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz},
      journal = {International Journal of Materials Science and Applications},
      volume = {6},
      number = {5},
      pages = {230-234},
      doi = {10.11648/j.ijmsa.20170605.11},
      url = {https://doi.org/10.11648/j.ijmsa.20170605.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170605.11},
      abstract = {In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4~5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.},
     year = {2017}
    }
    

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    T1  - Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz
    AU  - Tsung-Tse Lin
    AU  - Hideki Hirayama
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    PY  - 2017
    N1  - https://doi.org/10.11648/j.ijmsa.20170605.11
    DO  - 10.11648/j.ijmsa.20170605.11
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 230
    EP  - 234
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20170605.11
    AB  - In order to realize high temperature lasing of low frequency (< 2 THz) terahertz quantum cascade lasers (THz QCLs), selective carrier injection into an upper lasing level using an indirect injection (II) scheme is an effective method for inducing population inversion. The II scheme is realized with a four-level system. However, a three-level system that operates at low applied bias voltages causes additional lasing at higher frequencies (4~5 THz). By detuning the wave functions at the three lasing levels operating at low bias voltages, we were able to operate an II scheme THz QCL at a single stable frequency. Utilizing the higher injection selectivity, achieved through an indirect scattering-assisted injection process combined with diagonal emission, we were able to demonstrate stable operation of an AlGaAs/GaAs QCL operating at 1.89 THz at temperatures up to 160 K.
    VL  - 6
    IS  - 5
    ER  - 

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Author Information
  • Terahertz Quantum Device Laboratory, Center for Advanced Photonics, RIKEN, Sendai, Japan

  • Terahertz Quantum Device Laboratory, Center for Advanced Photonics, RIKEN, Sendai, Japan

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