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Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)

Received: 28 March 2013     Published: 2 May 2013
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Abstract

The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.

Published in International Journal of Materials Science and Applications (Volume 2, Issue 3)
DOI 10.11648/j.ijmsa.20130203.11
Page(s) 78-82
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Ferroelectric Capacitor, FEM-FET Transistor, FeRAM, Landau-Devonshire’s Theory of Phase Transition, Ferroelectric Properties

References
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  • APA Style

    M. Ourrad, A. Merad, T. Benouaz. (2013). Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). International Journal of Materials Science and Applications, 2(3), 78-82. https://doi.org/10.11648/j.ijmsa.20130203.11

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    ACS Style

    M. Ourrad; A. Merad; T. Benouaz. Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). Int. J. Mater. Sci. Appl. 2013, 2(3), 78-82. doi: 10.11648/j.ijmsa.20130203.11

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    AMA Style

    M. Ourrad, A. Merad, T. Benouaz. Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM). Int J Mater Sci Appl. 2013;2(3):78-82. doi: 10.11648/j.ijmsa.20130203.11

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  • @article{10.11648/j.ijmsa.20130203.11,
      author = {M. Ourrad and A. Merad and T. Benouaz},
      title = {Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)},
      journal = {International Journal of Materials Science and Applications},
      volume = {2},
      number = {3},
      pages = {78-82},
      doi = {10.11648/j.ijmsa.20130203.11},
      url = {https://doi.org/10.11648/j.ijmsa.20130203.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130203.11},
      abstract = {The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.},
     year = {2013}
    }
    

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    T1  - Effect of Phase Transition Temperature of Bati0.9Sn0.1o3 on the Operating Mode of Ferroelectricrandom Access Memories (FeRAM)
    AU  - M. Ourrad
    AU  - A. Merad
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    DO  - 10.11648/j.ijmsa.20130203.11
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
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    UR  - https://doi.org/10.11648/j.ijmsa.20130203.11
    AB  - The outstanding dielectric, ferroelectric and piezoelectric properties of BaTiO3 make it the desirable primary material for a variety of applications such as nonvolatile memories (RAM). At the Curie’s temperature the dielectric prop-erties of BaTiO3 undergo phase transition. The Landau-Devonshire’s phenomenological theory has been investigated in this paper to present the relation between the temperature and the electric induction. The effect of the variation of electric induction versus temperature of BaTi0.9Sn0.1O3 investigated in the fabrication of nonvolatile ferroelectric random access memories (FeRAM) which may lead us to discover a strange phenomenon called «determinist chaos », now the FeRAM lose its reliability.
    VL  - 2
    IS  - 3
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Author Information
  • Automatic Laboratory, Tlemcen University, Box. 119, Tlemcen 13000, Algeria

  • Group: Solid State Physics, Theoretical Physics Laboratory, Tlemcen University, Box. 119, Tlemcen 13000, Algeria

  • Automatic Laboratory, Tlemcen University, Box. 119, Tlemcen 13000, Algeria

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