Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering

Li Haiyi; Liu Yongzhi; Gao Bingxiang; Xie Liqiang

doi:doi:10.11648/j.ajpa.20170503.12

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Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering

Li Haiyi, Liu Yongzhi, Gao Bingxiang, Xie Liqiang

Published in American Journal of Physics and Applications (Volume 5, Issue 3)

Received: 27 June 2017 Accepted: Published: 27 June 2017

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Abstract

Titanium nitride (TiN_x) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiN_x thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.

Published in	American Journal of Physics and Applications (Volume 5, Issue 3)
DOI	10.11648/j.ajpa.20170503.12
Page(s)	41-45
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

TiN Thin Film, Magnetron Sputtering, Chamber Pressure, Lattice Constant, Optical Reflectance

References

[1]	Jianyun Zheng, Yanhong Lv, Shusheng Xu, et al. “Nanostructured TiN-based thin films by a novel and facile synthetic route”. Materials and Design2017, pp: 142–148.
[2]	Jijun Yang, Mingjin Peng, Jiali Liao, et al. “Effect of N2 gas injection parameters on structure and properties of TiN thin films prepared by reactive gas pulse sputtering”. Surface & Coatings Technology, 2017, pp: 391–397.
[3]	Huang J H, Ma C H, Chen H. “Effect of Ti interlayer on the residual stress and texture development of TiN thin films deposited by unbalanced magnetron sputtering”. Surface & Coatings Technology, 2006, Vol. 201(6)pp: 3199-3204.
[4]	Mubarak A, Hamzah E, Toff M R M, etal. “Study of macrodroplet and growth mechanisms with and without ion etchings on the properties of TiN coatings deposited on HSS using cathodic arc physical vapour deposition technique”. Materials Science and Engineering A, 2008, 474pp: 236-242.
[5]	Wang J M, Liu W G, Mei T. “The effect of thermal treatment on the electrical properties of titanium nitride thin films by filtered arc plasma method”. Ceramics International, 2004, Vol. 30(7)pp: 1921-1924.
[6]	Suharyanto, Shinichiro M, Yoshio S, et al. “Secondary electron emission of TiN-coated alumina ceramics”. Vacuum, 2007, Vol 81(6)pp: 799-802.
[7]	Tung Sheng Y, Jenn Ming W, Long Jang H, etal. “the proerties of TiN thin film deposited by pulsed direct current magnetron sputtering”. thin solid films, 2008, 516pp: 7294-7298.
[8]	Gaoling Zhao, Tianbl Zhang, Tao Zhang, et al. “Electrical and Optical Properties of Titanium Nitride Coationgs Prepared by Atmospheric Pressure Chemical Vapor Deposition”. Journal of Non-Crystalline Solids, 2008, 354pp: 1272-1275.
[9]	An-NiWang, Jia-Hong Huang, Haw-Wen Hsiao, et al. “Residual stress measurement on TiN thin films by combing nanoindentation and average X-ray strain (AXS) method”. Surface & Coatings Technology, 2015, pp: 43–49.
[10]	Jeong An Kwon, Min-Su Kim, “Dong Yun Shin. First-principles understanding of durable titanium nitride (TiN) electrocatalyst supports”. Journal of Industrial and Engineering Chemistry, 2017, 49 pp: 69–75.
[11]	Jianyun Zheng, Yanhong Lv, Shusheng Xu. “Nanostructured TiN-based thin films by a novel and facile synthetic route”. Materials and Design, 2017, 113pp: 142-148.
[12]	Lousa A, Esteve J, Pmejia J, et al. “Influence of Deposition Pressure on the Structural Mechanical and Decorative Properties of TiN Thin Films Deposited by Cathodic Arc Evaporation”, Vacuum, 2007, 81pp: 1507-1510.

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APA Style

Li Haiyi, Liu Yongzhi, Gao Bingxiang, Xie Liqiang. (2017). Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering. American Journal of Physics and Applications, 5(3), 41-45. https://doi.org/10.11648/j.ajpa.20170503.12

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ACS Style

Li Haiyi; Liu Yongzhi; Gao Bingxiang; Xie Liqiang. Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering. Am. J. Phys. Appl. 2017, 5(3), 41-45. doi: 10.11648/j.ajpa.20170503.12

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AMA Style

Li Haiyi, Liu Yongzhi, Gao Bingxiang, Xie Liqiang. Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering. Am J Phys Appl. 2017;5(3):41-45. doi: 10.11648/j.ajpa.20170503.12

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@article{10.11648/j.ajpa.20170503.12,
  author = {Li Haiyi and Liu Yongzhi and Gao Bingxiang and Xie Liqiang},
  title = {Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering},
  journal = {American Journal of Physics and Applications},
  volume = {5},
  number = {3},
  pages = {41-45},
  doi = {10.11648/j.ajpa.20170503.12},
  url = {https://doi.org/10.11648/j.ajpa.20170503.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20170503.12},
  abstract = {Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.},
 year = {2017}
}

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TY  - JOUR
T1  - Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering
AU  - Li Haiyi
AU  - Liu Yongzhi
AU  - Gao Bingxiang
AU  - Xie Liqiang
Y1  - 2017/06/27
PY  - 2017
N1  - https://doi.org/10.11648/j.ajpa.20170503.12
DO  - 10.11648/j.ajpa.20170503.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 41
EP  - 45
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20170503.12
AB  - Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.
VL  - 5
IS  - 3
ER  -

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Author Information

Li Haiyi

Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
Liu Yongzhi

Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
Gao Bingxiang

Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
Xie Liqiang

Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China

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Plain Text BibTeX RIS

APA Style

Li Haiyi, Liu Yongzhi, Gao Bingxiang, Xie Liqiang. (2017). Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering. American Journal of Physics and Applications, 5(3), 41-45. https://doi.org/10.11648/j.ajpa.20170503.12

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ACS Style

Li Haiyi; Liu Yongzhi; Gao Bingxiang; Xie Liqiang. Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering. Am. J. Phys. Appl. 2017, 5(3), 41-45. doi: 10.11648/j.ajpa.20170503.12

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AMA Style

Li Haiyi, Liu Yongzhi, Gao Bingxiang, Xie Liqiang. Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering. Am J Phys Appl. 2017;5(3):41-45. doi: 10.11648/j.ajpa.20170503.12

Copy | Download

@article{10.11648/j.ajpa.20170503.12,
  author = {Li Haiyi and Liu Yongzhi and Gao Bingxiang and Xie Liqiang},
  title = {Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering},
  journal = {American Journal of Physics and Applications},
  volume = {5},
  number = {3},
  pages = {41-45},
  doi = {10.11648/j.ajpa.20170503.12},
  url = {https://doi.org/10.11648/j.ajpa.20170503.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20170503.12},
  abstract = {Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering
AU  - Li Haiyi
AU  - Liu Yongzhi
AU  - Gao Bingxiang
AU  - Xie Liqiang
Y1  - 2017/06/27
PY  - 2017
N1  - https://doi.org/10.11648/j.ajpa.20170503.12
DO  - 10.11648/j.ajpa.20170503.12
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 41
EP  - 45
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20170503.12
AB  - Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.
VL  - 5
IS  - 3
ER  -

Copy | Download