Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers
Advances in Nanomaterials
Volume 1, Issue 1, September 2017, Pages: 22-27
Received: Apr. 8, 2017; Accepted: Aug. 14, 2017; Published: Sep. 5, 2017
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T. Belal, Department of Physics, Laboratory-N Body & Structure of Matter, Algiers, Algeria
R. Tala-Ighil Zair, University M'hamed Bougara Boumerdes, URMPE Research Unit, Institute of Electrical & Electronic Engineering, Boumerdes, Algeria
F. Ghezal, University M'hamed Bougara Boumerdes, URMPE Research Unit, Institute of Electrical & Electronic Engineering, Boumerdes, Algeria
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This study focuses on the solar cells based on CIS simulation with buffer layer zinc oxide (ZnO) and fluorine-doped zinc oxide (ZnO:F). ZnO is a multifunctional material with several applications in electronics and photovoltaics, with multiple possibilities of synthesis involve inexpensive methods. ZnO (ZnO:F) is a prominent candidate to be an alternative buffer layer to so-called toxic cadmium sulphide (CdS) in CIS based solar cells. A promising result has been achieved with an efficiency of 22% with Voc = 0.565 V, Jsc = 45 mA/cm2 and fill factor = 82% by using ZnO (ZnO:F) as a buffer layer. It is also found that the high efficiency of CIS absorber layer thickness is between 1500nm and 2000nm. Our results are in good agreement with those reported in the literature from experiments.
CIS, ZnO, ZnO:F, SCAPS, Buffer Layer
To cite this article
T. Belal, R. Tala-Ighil Zair, F. Ghezal, Numerical Simulation of CuInSe2 (CIS) Thin Film Solar Cell with (ZnO, ZnO:F) Buffer Layers, Advances in Nanomaterials. Vol. 1, No. 1, 2017, pp. 22-27. doi: 10.11648/
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