The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures

Mohamed Ahmed Baba; Ala Gasim Elhag; Nafie Abdallatief Almuslet; Abdelmoneim Mohamed Awad Elgied; Ahmed Mohamed Salih

doi:doi:10.11648/j.ajn.20200602.12

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The Characterizations of La₂Ti₂O₇ Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures

Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih

Published in American Journal of Nanosciences (Volume 6, Issue 2)

Received: 29 May 2020 Accepted: 29 June 2020 Published: 28 July 2020

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Abstract

Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La₂Ti₂O₇ films. La₂Ti₂O₇ target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La₂Ti₂O₇ films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.

Published in	American Journal of Nanosciences (Volume 6, Issue 2)
DOI	10.11648/j.ajn.20200602.12
Page(s)	14-17
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

La₂Ti₂O₇ Thin Films, PLD, Perovskites, Annealing Temperature

References

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Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih. (2020). The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures. American Journal of Nanosciences, 6(2), 14-17. https://doi.org/10.11648/j.ajn.20200602.12

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ACS Style

Mohamed Ahmed Baba; Ala Gasim Elhag; Nafie Abdallatief Almuslet; Abdelmoneim Mohamed Awad Elgied; Ahmed Mohamed Salih. The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures. Am. J. Nanosci. 2020, 6(2), 14-17. doi: 10.11648/j.ajn.20200602.12

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AMA Style

Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih. The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures. Am J Nanosci. 2020;6(2):14-17. doi: 10.11648/j.ajn.20200602.12

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@article{10.11648/j.ajn.20200602.12,
  author = {Mohamed Ahmed Baba and Ala Gasim Elhag and Nafie Abdallatief Almuslet and Abdelmoneim Mohamed Awad Elgied and Ahmed Mohamed Salih},
  title = {The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures},
  journal = {American Journal of Nanosciences},
  volume = {6},
  number = {2},
  pages = {14-17},
  doi = {10.11648/j.ajn.20200602.12},
  url = {https://doi.org/10.11648/j.ajn.20200602.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20200602.12},
  abstract = {Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.},
 year = {2020}
}

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TY  - JOUR
T1  - The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures
AU  - Mohamed Ahmed Baba
AU  - Ala Gasim Elhag
AU  - Nafie Abdallatief Almuslet
AU  - Abdelmoneim Mohamed Awad Elgied
AU  - Ahmed Mohamed Salih
Y1  - 2020/07/28
PY  - 2020
N1  - https://doi.org/10.11648/j.ajn.20200602.12
DO  - 10.11648/j.ajn.20200602.12
T2  - American Journal of Nanosciences
JF  - American Journal of Nanosciences
JO  - American Journal of Nanosciences
SP  - 14
EP  - 17
PB  - Science Publishing Group
SN  - 2575-4858
UR  - https://doi.org/10.11648/j.ajn.20200602.12
AB  - Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.
VL  - 6
IS  - 2
ER  -

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Author Information

Mohamed Ahmed Baba

Department of Laser Systems, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan
Ala Gasim Elhag

Department of Physics, University of Science and Technology of China, Hefei, China
Nafie Abdallatief Almuslet

Almogran College of Science and Technology, Khartoum, Sudan
Abdelmoneim Mohamed Awad Elgied

Department of General Science, Karrary University, Omdurman, Sudan
Ahmed Mohamed Salih

Department of Laser Systems, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan

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APA Style

Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih. (2020). The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures. American Journal of Nanosciences, 6(2), 14-17. https://doi.org/10.11648/j.ajn.20200602.12

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ACS Style

Mohamed Ahmed Baba; Ala Gasim Elhag; Nafie Abdallatief Almuslet; Abdelmoneim Mohamed Awad Elgied; Ahmed Mohamed Salih. The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures. Am. J. Nanosci. 2020, 6(2), 14-17. doi: 10.11648/j.ajn.20200602.12

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AMA Style

Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih. The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures. Am J Nanosci. 2020;6(2):14-17. doi: 10.11648/j.ajn.20200602.12

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@article{10.11648/j.ajn.20200602.12,
  author = {Mohamed Ahmed Baba and Ala Gasim Elhag and Nafie Abdallatief Almuslet and Abdelmoneim Mohamed Awad Elgied and Ahmed Mohamed Salih},
  title = {The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures},
  journal = {American Journal of Nanosciences},
  volume = {6},
  number = {2},
  pages = {14-17},
  doi = {10.11648/j.ajn.20200602.12},
  url = {https://doi.org/10.11648/j.ajn.20200602.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajn.20200602.12},
  abstract = {Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.},
 year = {2020}
}

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TY  - JOUR
T1  - The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures
AU  - Mohamed Ahmed Baba
AU  - Ala Gasim Elhag
AU  - Nafie Abdallatief Almuslet
AU  - Abdelmoneim Mohamed Awad Elgied
AU  - Ahmed Mohamed Salih
Y1  - 2020/07/28
PY  - 2020
N1  - https://doi.org/10.11648/j.ajn.20200602.12
DO  - 10.11648/j.ajn.20200602.12
T2  - American Journal of Nanosciences
JF  - American Journal of Nanosciences
JO  - American Journal of Nanosciences
SP  - 14
EP  - 17
PB  - Science Publishing Group
SN  - 2575-4858
UR  - https://doi.org/10.11648/j.ajn.20200602.12
AB  - Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.
VL  - 6
IS  - 2
ER  -

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