Room-Temperature Si-Compatible Red Light Emission from In<sub>2</sub>Se<sub>3</sub>-Decorated Silicon Nanowires

Jinyou Xu

doi:doi:10.11648/j.nsnm.20170302.12

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Room-Temperature Si-Compatible Red Light Emission from In₂Se₃-Decorated Silicon Nanowires

Jinyou Xu

Published in Nanoscience and Nanometrology (Volume 3, Issue 2)

Received: 19 June 2017 Accepted: 17 July 2017 Published: 9 August 2017

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Abstract

Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In₂Se₃ nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In₂Se₃ nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In₂Se₃ nanoflakes. This work demonstrated that nanoscale atomically-thin In₂Se₃ flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.

Published in	Nanoscience and Nanometrology (Volume 3, Issue 2)
DOI	10.11648/j.nsnm.20170302.12
Page(s)	46-50
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Silicon Nanowires, Optical Materials and Properties, Luminescence, In₂Se₃

References

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APA Style

Jinyou Xu. (2017). Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanoscience and Nanometrology, 3(2), 46-50. https://doi.org/10.11648/j.nsnm.20170302.12

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ACS Style

Jinyou Xu. Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanosci. Nanometrol. 2017, 3(2), 46-50. doi: 10.11648/j.nsnm.20170302.12

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AMA Style

Jinyou Xu. Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanosci Nanometrol. 2017;3(2):46-50. doi: 10.11648/j.nsnm.20170302.12

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@article{10.11648/j.nsnm.20170302.12,
  author = {Jinyou Xu},
  title = {Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires},
  journal = {Nanoscience and Nanometrology},
  volume = {3},
  number = {2},
  pages = {46-50},
  doi = {10.11648/j.nsnm.20170302.12},
  url = {https://doi.org/10.11648/j.nsnm.20170302.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nsnm.20170302.12},
  abstract = {Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.},
 year = {2017}
}

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TY  - JOUR
T1  - Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires
AU  - Jinyou Xu
Y1  - 2017/08/09
PY  - 2017
N1  - https://doi.org/10.11648/j.nsnm.20170302.12
DO  - 10.11648/j.nsnm.20170302.12
T2  - Nanoscience and Nanometrology
JF  - Nanoscience and Nanometrology
JO  - Nanoscience and Nanometrology
SP  - 46
EP  - 50
PB  - Science Publishing Group
SN  - 2472-3630
UR  - https://doi.org/10.11648/j.nsnm.20170302.12
AB  - Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.
VL  - 3
IS  - 2
ER  -

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Author Information

Jinyou Xu

Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, The People’s Republic of China

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Plain Text BibTeX RIS

APA Style

Jinyou Xu. (2017). Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanoscience and Nanometrology, 3(2), 46-50. https://doi.org/10.11648/j.nsnm.20170302.12

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ACS Style

Jinyou Xu. Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanosci. Nanometrol. 2017, 3(2), 46-50. doi: 10.11648/j.nsnm.20170302.12

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AMA Style

Jinyou Xu. Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanosci Nanometrol. 2017;3(2):46-50. doi: 10.11648/j.nsnm.20170302.12

Copy | Download

@article{10.11648/j.nsnm.20170302.12,
  author = {Jinyou Xu},
  title = {Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires},
  journal = {Nanoscience and Nanometrology},
  volume = {3},
  number = {2},
  pages = {46-50},
  doi = {10.11648/j.nsnm.20170302.12},
  url = {https://doi.org/10.11648/j.nsnm.20170302.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nsnm.20170302.12},
  abstract = {Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires
AU  - Jinyou Xu
Y1  - 2017/08/09
PY  - 2017
N1  - https://doi.org/10.11648/j.nsnm.20170302.12
DO  - 10.11648/j.nsnm.20170302.12
T2  - Nanoscience and Nanometrology
JF  - Nanoscience and Nanometrology
JO  - Nanoscience and Nanometrology
SP  - 46
EP  - 50
PB  - Science Publishing Group
SN  - 2472-3630
UR  - https://doi.org/10.11648/j.nsnm.20170302.12
AB  - Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.
VL  - 3
IS  - 2
ER  -

Copy | Download