American Journal of Nano Research and Applications
Volume 5, Issue 3-1, May 2017, Pages: 48-55
Received: Feb. 3, 2017;
Accepted: Feb. 4, 2017;
Published: Feb. 28, 2017
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Nodar Kekelidze, Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia; Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia; Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia
Elza Khutsishvili, Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia
Zaur Kvinikadze, Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia
Zinaida Davitaja, Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia
David Kekelidze, Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia; Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia
Bela Kvirkvelia, Semiconductor Materials Science Laboratory, F. Tavadze Institute of Metallurgy & Materials Science, Tbilisi, Georgia; Substance Research Institute, I. Javakhishvili Tbilisi State University, Tbilisi, Georgia
Ketevan Sadradze, Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia
Lali Nadiradze, Faculty of Informatics & Control Systems, Georgian Technical University, Tbilisi, Georgia
George Kekelidze, BoT, Eurosolar, Bonn, Germany
The compounds of indium arsenide, indium phosphide and their solid solutions are important materials for optoelectronics, microelectronics and nanotechnology. The stabilization of nanoparticles is a major problem in modern nanotechnology. The presented work can provide valuable information in the indicated direction. It has been shown that, it is possible to create nanoscale clusters and stable point type defects in crystals with the help of hard radiation. Investigations of very slow diffusion processes in irradiated crystals allow to reveal “abnormal” behavior of nanoscale clusters. It has been shown that in certain materials, the curves of the frequency dependence of the optical absorption coefficient near the fundamental edge at 300 K for a long time (about two years) do not shift to the “restoration”, but move to the opposite direction. We studied the electrical and optical properties and the heat treatment processes of crystals irradiated with fast neutron fluence (2 · 1018 n / cm2) and high-energy (50 MeV) electrons (6.0 • 1017 e / cm2). As a result, the mechanism of revealed “anomalous” phenomena has been established. We found that nanosize clusters contribute to a significant increase in the basic parameter of the thermoelectric material’s thermoelectric efficiency. Scattering mechanism s of electrons on nanosize clusters has been also established. In addition the possible influence of nanoscale clusters as well as small point type defects on important parameters of the materials, in particular, the charge carriers concentration and mobility, electrons effectivemass, dispersion of the conduction band, and crystal lattice vibrations have been analyzed. Using the properties of small defects, radiation-resistant materials were created, with standing very high dose of hard radiation.
Nanosize Clusters in InAs and InP Compounds and Their Solid Solutions InPxAs1–x, American Journal of Nano Research and Applications. Special Issue: Nanotechnologies.
Vol. 5, No. 3-1,
2017, pp. 48-55.
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