Influence of Nanoparticles in PZT Ferroelectric Material Properties and Their Applications to Memory Devices
American Journal of Nano Research and Applications
Volume 2, Issue 3, May 2014, Pages: 56-62
Received: Apr. 15, 2014;
Accepted: Jun. 9, 2014;
Published: Jun. 20, 2014
Views 3151 Downloads 157
Kurapati Kurapati Srinivas, Nanotechnology Group, Department of Physics, GMR Institute of Technology, A.P. India
Follow on us
Ferroelctrics are technologically important materials, particularly for their applications in ferroelectric random access memory, based on semiconductor integrated technology have been a great success. Furthermore, these RAMS are very sensitive to radiation and this is detrimental for military and space applications. The properties of the layered perovskite ferroelectrics can be enhanced by addition or substitution of alternative cations. Among the important ferroelectric materials lead zirconate titanate (PZT), which is part of the solid solution formed between ferroelectric lead titanate and anti-ferroelectric lead zirconate with different compositions are used for different applications. Recent works indicate the influence of nanoparticles in PZT properties like decrease of synthesizing temperature, electrical conductivity and low dielectric loss. These materials will be the future ferroelectric materials for noval applications. The present paper Include a thorough study of these materials to finding out reasons for the improvement ferroelectric material properties in the nano scale and their optimization techniques for better applications.
Ferroelectrics, Nanoparticles, Lead Zirconate Titanate, FeRAMS, SPM
To cite this article
Kurapati Kurapati Srinivas,
Influence of Nanoparticles in PZT Ferroelectric Material Properties and Their Applications to Memory Devices, American Journal of Nano Research and Applications.
Vol. 2, No. 3,
2014, pp. 56-62.
Szafraniak,a) C. Harnagea,b) R. Scholz, S. Bhattacharyya,c) D. Hesse, and M. Alexe Ferroelectric epitaxial nanocrystals obtained by a self-patterning method APPLIED PHYSICS LETTERS VOLUME 83, NUMBER 11 15 SEPTEMBER 2003 2211-2213
Ionela Vrejoiu,a_ Marin Alexe, Dietrich Hesse, and Ulrich Gösele Ferroelectric nanostructures J. Vac. Sci. Technol. B 27„1 Jan/Feb 2009 pp. 498-503.
A Gruverman and A Kholkin Nanoscale ferroelectrics: processing, characterization and future trends Rep. Prog. Phys. 69 (2006) 2443–2474
Xingqiang Liu , Yueli Liu , Wen Chen , Jinchai Li and Ferroelectric memory based on nanostructures Nanoscale Research Letters 2012, 7:285-290
Zhenkui Shen, Zhihui Chen, Qian Lu, Zhijun Qiu, Anquan Jiang, Xinping Qu, Yifang Chen and Ran Liu , Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application Nanoscale Research Letters 2011, 6:474-479,
Zhaohui Ren, Gang Xu, Xiao Wei, Yong Liu, Ge Shen, and Gaorong HanwShape Evolution of Pb (Zr,Ti)O3 Nanocrystals Under Hydrothermal Conditions J. Am. Ceram. Soc., 90  2645–2648 (2007)
Waser R (ed) 2005 Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices (Berlin: Wiley-VCH)
Hong S 2003 Nanoscale Phenomena in Ferroelectric Thin Films (Dordrecht: Kluwer)
Alexe M and Gruverman A 2004 Nanoscale Characterization of Ferroelectric: Scanning Probe Microscopy Approach (Berlin: Springer).