Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.
American Journal of Nano Research and Applications
Volume 1, Issue 1, May 2013, Pages: 11-16
Received: May 6, 2013; Published: May 30, 2013
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Authors
Hui Zhang, Advanced Technology Research Center, Gunma University, Japan; Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
Yulong Zhang, Graduate School of Engineering, Gunma, Japan; Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
Sumio Hosaka, Graduate School of Engineering, Gunma, Japan; Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
You Yin, Graduate School of Engineering, Gunma, Japan; Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
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Abstract
We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists
Keywords
Electron Beam Lithography, Gaussian Beam, Monte Carlo Simulation, Energy Deposition Distribution, Resist Profile
To cite this article
Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin, Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation., American Journal of Nano Research and Applications. Vol. 1, No. 1, 2013, pp. 11-16. doi: 10.11648/j.nano.20130101.13
References
[1]
Y.Nakamura,T.Sakamoto, and J.S.Tsui: Jpn. J. Appl. Phys., Vol. 34 (1995) 4562
[2]
C.Joachim, J.K.Gimzewski, and A.Aviram: Nature Vol. 408 (2000) 541-548
[3]
S.Hosaka, T.Akahane, M.Huda, T.Tamura, Y. Yin, N. Kihara, Y. Kamata and A. Kitsutsu:Microelectron. Eng., Vol. 88 (2011) 2571-2575
[4]
S.Hosaka, H.Sano, K.Itoh and H. Sone: Microelectron.Eng. , Vol. 83 (2006) 792-795
[5]
Z.Mohamad, M.Shirai, H.Sone, S.Hosaka and M.Kotera, Nanotechnology,Vol. 19 (2008)025301 1-4
[6]
B.D.Terris,T.Thomson, and J.Phy.D: Appl. Phys., Vol. 38 (2005) R199-R222
[7]
I.Bita, J.K.W.Yang, Y.S.Jung, C.A.Ross, E.L.Thomas and K. K. Berggren, Science Vol. 321 (2008) 939-943
[8]
Z.Chen, Y.-M.Lin, M.J.Rooks, and P.Avouris: Physica E (Amsterdam), Vol.40 (2007) 228-232
[9]
A.A.Tseng, K.Chen, C.D.Chen, and K.J.Ma: IEEETrans. Electron. Packag. Manuf. Vol. 26 (2003) 141-149
[10]
M. Kotera, and T. Maekawa: Jpn. J. Appl. Phys.,Vol. 48 (2009) 06FB05-1 - 06FB05-4.
[11]
J.Fujita, Y.Ohnishi, Y.Ochiai, and S.Matsui: Appl. Phys. Lett., Vol. 68 (1996) 1297-1299
[12]
S.Hosaka, Y.Tanaka,M.Shirai, Z. Mohamad and Y. Yin: Jpn.J.Appl.Phys., Vol. 49, (2010)046503 1-3
[13]
M.Kotera, S. Yamaguchi, S. Umegaki, and H. Suga:Jpn. J. Appl. Phys., Vol. 33(1994) 7144-7147
[14]
H.G.Duan, D.Winston, J.K.W.Yang, B.M.Cord, V. R. Manfrinato and K. K. Berggren: J. Vac. Sci. Technol., Vol.28 (2010) C6C58
[15]
T.H.P.Chang: J. Vac. Sci. Technol., Vol. 12 (1975) 1271-1275
[16]
K. Murata, and T.Matsukawa: Jpn.J.Appl.Phys., Vol. 10, 678-685 (1971)
[17]
N.Aizaki: Jpn.J.Appl.Phys., Vol. 18 (1979) 319-325
[18]
M. Kotera, K. Murata, and K. Nagami:J. Appl. Phys., Vol. 52, (1981)7403
[19]
M. Kotera: J. Appl. Phys., Vol. 65, (1989)3991
[20]
D.C.Joy and S.Luo: Scanning, Vol. 11 (1989) 176
[21]
K.Vutova, G.Mladenov,I.Raptis, A. Olziersky: J.Mater.Process.Technol.,Vol. 184, 305-311 (2007)
[22]
M.S.Singh, R.K.B.Singh, R.Khatri., and B.I.Sharma: Adv. Sci. Lett., Vol. 3 (2010) 57-61
[23]
M.Ishida, J.I.Fujita, T.Ogura, Y. Ochiai, E. Ohshima: Jpn. J. Appl. Phys., Vol. 42, 3913-3916 (2003)
[24]
P.Jedrasik, M.Hanson, and B.Nilsson: Microelectron.Eng., Vol. 53 (2000) 497-500
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