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Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.

Received: 6 May 2013     Published: 30 May 2013
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Abstract

We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists

Published in American Journal of Nanoscience and Nanotechnology (Volume 1, Issue 1)
DOI 10.11648/j.nano.20130101.13
Page(s) 11-16
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Electron Beam Lithography, Gaussian Beam, Monte Carlo Simulation, Energy Deposition Distribution, Resist Profile

References
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  • APA Style

    Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin. (2013). Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. American Journal of Nano Research and Applications, 1(1), 11-16. https://doi.org/10.11648/j.nano.20130101.13

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    ACS Style

    Hui Zhang; Yulong Zhang; Sumio Hosaka; You Yin. Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. Am. J. Nano Res. Appl. 2013, 1(1), 11-16. doi: 10.11648/j.nano.20130101.13

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    AMA Style

    Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin. Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. Am J Nano Res Appl. 2013;1(1):11-16. doi: 10.11648/j.nano.20130101.13

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  • @article{10.11648/j.nano.20130101.13,
      author = {Hui Zhang and Yulong Zhang and Sumio Hosaka and You Yin},
      title = {Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.},
      journal = {American Journal of Nano Research and Applications},
      volume = {1},
      number = {1},
      pages = {11-16},
      doi = {10.11648/j.nano.20130101.13},
      url = {https://doi.org/10.11648/j.nano.20130101.13},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20130101.13},
      abstract = {We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists},
     year = {2013}
    }
    

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  • TY  - JOUR
    T1  - Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.
    AU  - Hui Zhang
    AU  - Yulong Zhang
    AU  - Sumio Hosaka
    AU  - You Yin
    Y1  - 2013/05/30
    PY  - 2013
    N1  - https://doi.org/10.11648/j.nano.20130101.13
    DO  - 10.11648/j.nano.20130101.13
    T2  - American Journal of Nano Research and Applications
    JF  - American Journal of Nano Research and Applications
    JO  - American Journal of Nano Research and Applications
    SP  - 11
    EP  - 16
    PB  - Science Publishing Group
    SN  - 2575-3738
    UR  - https://doi.org/10.11648/j.nano.20130101.13
    AB  - We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists
    VL  - 1
    IS  - 1
    ER  - 

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Author Information
  • Advanced Technology Research Center, Gunma University, Japan

  • Graduate School of Engineering, Gunma, Japan

  • Graduate School of Engineering, Gunma, Japan

  • Graduate School of Engineering, Gunma, Japan

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