Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates

Hla Myo Tun; Thant Zin Win; Kensuke Minami; Satomi Teraya; Koushi Okita; Yusui Nakamura

doi:doi:10.11648/j.sr.20150306.16

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Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates

Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, Yusui Nakamura

Published in Science Research (Volume 3, Issue 6)

Received: 21 October 2015 Accepted: 27 October 2015 Published: 13 November 2015

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Abstract

ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.

Published in	Science Research (Volume 3, Issue 6)
DOI	10.11648/j.sr.20150306.16
Page(s)	300-303
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Film Formation, Characterization, Mist-CVD, ZnO, LED

References

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[6]	Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku and Yasunobu Sugimoto, Jpn. J. Appl.Phys. Vol.(35)(1996) p.74-76.
[7]	K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Applied Physics Letters 97, 013501 (2010); doi: 10.1063/1.3459139.
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APA Style

Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, et al. (2015). Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Science Research, 3(6), 300-303. https://doi.org/10.11648/j.sr.20150306.16

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ACS Style

Hla Myo Tun; Thant Zin Win; Kensuke Minami; Satomi Teraya; Koushi Okita, et al. Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Sci. Res. 2015, 3(6), 300-303. doi: 10.11648/j.sr.20150306.16

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AMA Style

Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, et al. Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Sci Res. 2015;3(6):300-303. doi: 10.11648/j.sr.20150306.16

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@article{10.11648/j.sr.20150306.16,
  author = {Hla Myo Tun and Thant Zin Win and Kensuke Minami and Satomi Teraya and Koushi Okita and Yusui Nakamura},
  title = {Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates},
  journal = {Science Research},
  volume = {3},
  number = {6},
  pages = {300-303},
  doi = {10.11648/j.sr.20150306.16},
  url = {https://doi.org/10.11648/j.sr.20150306.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sr.20150306.16},
  abstract = {ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.},
 year = {2015}
}

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TY  - JOUR
T1  - Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates
AU  - Hla Myo Tun
AU  - Thant Zin Win
AU  - Kensuke Minami
AU  - Satomi Teraya
AU  - Koushi Okita
AU  - Yusui Nakamura
Y1  - 2015/11/13
PY  - 2015
N1  - https://doi.org/10.11648/j.sr.20150306.16
DO  - 10.11648/j.sr.20150306.16
T2  - Science Research
JF  - Science Research
JO  - Science Research
SP  - 300
EP  - 303
PB  - Science Publishing Group
SN  - 2329-0927
UR  - https://doi.org/10.11648/j.sr.20150306.16
AB  - ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.
VL  - 3
IS  - 6
ER  -

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Author Information

Hla Myo Tun

Department of Electronic Engineering, Mandalay Technological University, Mandalay Region, Republic of the Union of Myanmar
Thant Zin Win

Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar
Kensuke Minami

Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan
Satomi Teraya

Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan
Koushi Okita

Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan
Yusui Nakamura

Graduate School of Science and Technology, Kumamoto University, Kumamoto, Japan; Kumamoto Institute for Photo-Electro Organics, Kumamoto, Japan

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Plain Text BibTeX RIS

APA Style

Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, et al. (2015). Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Science Research, 3(6), 300-303. https://doi.org/10.11648/j.sr.20150306.16

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ACS Style

Hla Myo Tun; Thant Zin Win; Kensuke Minami; Satomi Teraya; Koushi Okita, et al. Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Sci. Res. 2015, 3(6), 300-303. doi: 10.11648/j.sr.20150306.16

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AMA Style

Hla Myo Tun, Thant Zin Win, Kensuke Minami, Satomi Teraya, Koushi Okita, et al. Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates. Sci Res. 2015;3(6):300-303. doi: 10.11648/j.sr.20150306.16

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@article{10.11648/j.sr.20150306.16,
  author = {Hla Myo Tun and Thant Zin Win and Kensuke Minami and Satomi Teraya and Koushi Okita and Yusui Nakamura},
  title = {Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates},
  journal = {Science Research},
  volume = {3},
  number = {6},
  pages = {300-303},
  doi = {10.11648/j.sr.20150306.16},
  url = {https://doi.org/10.11648/j.sr.20150306.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sr.20150306.16},
  abstract = {ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Film Formation and Characterization of Undoped ZnO on M-plane Sapphire by Mist Chemical Vapour Deposition (Mist-CVD) with Different Carrier Gas Flow Rates
AU  - Hla Myo Tun
AU  - Thant Zin Win
AU  - Kensuke Minami
AU  - Satomi Teraya
AU  - Koushi Okita
AU  - Yusui Nakamura
Y1  - 2015/11/13
PY  - 2015
N1  - https://doi.org/10.11648/j.sr.20150306.16
DO  - 10.11648/j.sr.20150306.16
T2  - Science Research
JF  - Science Research
JO  - Science Research
SP  - 300
EP  - 303
PB  - Science Publishing Group
SN  - 2329-0927
UR  - https://doi.org/10.11648/j.sr.20150306.16
AB  - ZnO thin films were deposited on sapphire substrate by mist chemical vapor deposition (mist-CVD) with different flow rate of carrier gas. This is a simple and low cost method for large-area deposition system. In this experiment, zinc chloride solution was used as sources, and the crystal growth was achieved at the growth temperature of 600°C and various flow rates of Nitrogen gas. The X-ray diffraction (XRD) spectrum was performed, and the photoluminescence spectra proved near-band-edge emission and strong deep-level emissions. In this work, we obtained the optimum condition for crystal growth of ZnO on m-plane sapphire, where XRD θ-2θ single peak at m-plane ZnO.
VL  - 3
IS  - 6
ER  -

Copy | Download