International Journal of Energy and Power Engineering

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Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum

Received: 11 December 2015    Accepted:     Published: 11 December 2015
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Abstract

Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.

DOI 10.11648/j.ijepe.20150406.14
Published in International Journal of Energy and Power Engineering (Volume 4, Issue 6, December 2015)
Page(s) 353-357
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Near-Ultraviolet LEDs, Efficiency Droop, Auger Recombination

References
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Author Information
  • School of Science, Shenyang University of Technology, Shenyang, China

  • School of Science, Shenyang University of Technology, Shenyang, China

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    Ying Dai, Shanyu Quan. (2015). Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. International Journal of Energy and Power Engineering, 4(6), 353-357. https://doi.org/10.11648/j.ijepe.20150406.14

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    ACS Style

    Ying Dai; Shanyu Quan. Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. Int. J. Energy Power Eng. 2015, 4(6), 353-357. doi: 10.11648/j.ijepe.20150406.14

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    AMA Style

    Ying Dai, Shanyu Quan. Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum. Int J Energy Power Eng. 2015;4(6):353-357. doi: 10.11648/j.ijepe.20150406.14

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  • @article{10.11648/j.ijepe.20150406.14,
      author = {Ying Dai and Shanyu Quan},
      title = {Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum},
      journal = {International Journal of Energy and Power Engineering},
      volume = {4},
      number = {6},
      pages = {353-357},
      doi = {10.11648/j.ijepe.20150406.14},
      url = {https://doi.org/10.11648/j.ijepe.20150406.14},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijepe.20150406.14},
      abstract = {Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.},
     year = {2015}
    }
    

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  • TY  - JOUR
    T1  - Data Analysis on the Advantages of the LEDS with Polarization-Matched Quantum
    AU  - Ying Dai
    AU  - Shanyu Quan
    Y1  - 2015/12/11
    PY  - 2015
    N1  - https://doi.org/10.11648/j.ijepe.20150406.14
    DO  - 10.11648/j.ijepe.20150406.14
    T2  - International Journal of Energy and Power Engineering
    JF  - International Journal of Energy and Power Engineering
    JO  - International Journal of Energy and Power Engineering
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    EP  - 357
    PB  - Science Publishing Group
    SN  - 2326-960X
    UR  - https://doi.org/10.11648/j.ijepe.20150406.14
    AB  - Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wave functions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.
    VL  - 4
    IS  - 6
    ER  - 

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