Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Patrick Mwinzi Mwathe; Robinson Musembi; Mathew Munji; Francis Nyongesa; Benjamin Odari; Walter Njoroge; Bernard Aduda; Boniface Muthoka

doi:doi:10.11648/j.am.20150403.12

Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Patrick Mwinzi Mwathe, Robinson Musembi, Mathew Munji, Francis Nyongesa, Benjamin Odari, Walter Njoroge, Bernard Aduda, Boniface Muthoka

Published in Advances in Materials (Volume 4, Issue 3)

Received: 13 April 2015 Accepted: 17 April 2015 Published: 27 April 2015

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Abstract

In this study doped SnO2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl4.5H2O), ammonium fluoride (NH4F) and palladium chloride (PdCl2). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm – 2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 4500C. Sheet resistivity for the as prepared F: SnO2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO2 respectively. Low sheet resistivity of F: SnO2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO2 thin films good choice for making a transparent thin film gas sensors.

Published in	Advances in Materials (Volume 4, Issue 3)
DOI	10.11648/j.am.20150403.12
Page(s)	51-58
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Spray Pyrolysis, Fluorine Doping, Palladium Doping, Annealing and Passivation

References

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APA Style

Patrick Mwinzi Mwathe, Robinson Musembi, Mathew Munji, Francis Nyongesa, Benjamin Odari, et al. (2015). Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique. Advances in Materials, 4(3), 51-58. https://doi.org/10.11648/j.am.20150403.12

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ACS Style

Patrick Mwinzi Mwathe; Robinson Musembi; Mathew Munji; Francis Nyongesa; Benjamin Odari, et al. Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique. Adv. Mater. 2015, 4(3), 51-58. doi: 10.11648/j.am.20150403.12

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AMA Style

Patrick Mwinzi Mwathe, Robinson Musembi, Mathew Munji, Francis Nyongesa, Benjamin Odari, et al. Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique. Adv Mater. 2015;4(3):51-58. doi: 10.11648/j.am.20150403.12

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@article{10.11648/j.am.20150403.12,
  author = {Patrick Mwinzi Mwathe and Robinson Musembi and Mathew Munji and Francis Nyongesa and Benjamin Odari and Walter Njoroge and Bernard Aduda and Boniface Muthoka},
  title = {Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique},
  journal = {Advances in Materials},
  volume = {4},
  number = {3},
  pages = {51-58},
  doi = {10.11648/j.am.20150403.12},
  url = {https://doi.org/10.11648/j.am.20150403.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20150403.12},
  abstract = {In this study doped SnO2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl4.5H2O), ammonium fluoride (NH4F) and palladium chloride (PdCl2). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm – 2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 4500C.  Sheet resistivity for the as prepared F: SnO2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO2 respectively. Low sheet resistivity of F: SnO2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO2 thin films good choice for making a transparent thin film gas sensors.},
 year = {2015}
}

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TY  - JOUR
T1  - Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique
AU  - Patrick Mwinzi Mwathe
AU  - Robinson Musembi
AU  - Mathew Munji
AU  - Francis Nyongesa
AU  - Benjamin Odari
AU  - Walter Njoroge
AU  - Bernard Aduda
AU  - Boniface Muthoka
Y1  - 2015/04/27
PY  - 2015
N1  - https://doi.org/10.11648/j.am.20150403.12
DO  - 10.11648/j.am.20150403.12
T2  - Advances in Materials
JF  - Advances in Materials
JO  - Advances in Materials
SP  - 51
EP  - 58
PB  - Science Publishing Group
SN  - 2327-252X
UR  - https://doi.org/10.11648/j.am.20150403.12
AB  - In this study doped SnO2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl4.5H2O), ammonium fluoride (NH4F) and palladium chloride (PdCl2). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm – 2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 4500C.  Sheet resistivity for the as prepared F: SnO2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO2 respectively. Low sheet resistivity of F: SnO2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO2 thin films good choice for making a transparent thin film gas sensors.
VL  - 4
IS  - 3
ER  -

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Author Information

Patrick Mwinzi Mwathe

Department of Physics, Kenyatta University, Nairobi, Kenya; Department of Physics, University of Nairobi, Nairobi, Kenya
Robinson Musembi

Department of Physics, University of Nairobi, Nairobi, Kenya
Mathew Munji

Department of Physics, Kenyatta University, Nairobi, Kenya
Francis Nyongesa

Department of Physics, University of Nairobi, Nairobi, Kenya
Benjamin Odari

Department of Physics, University of Nairobi, Nairobi, Kenya
Walter Njoroge

Department of Physics, Kenyatta University, Nairobi, Kenya
Bernard Aduda

Department of Physics, University of Nairobi, Nairobi, Kenya
Boniface Muthoka

Department of Physics, University of Nairobi, Nairobi, Kenya

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Patrick Mwinzi Mwathe, Robinson Musembi, Mathew Munji, Francis Nyongesa, Benjamin Odari, et al. (2015). Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique. Advances in Materials, 4(3), 51-58. https://doi.org/10.11648/j.am.20150403.12

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ACS Style

Patrick Mwinzi Mwathe; Robinson Musembi; Mathew Munji; Francis Nyongesa; Benjamin Odari, et al. Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique. Adv. Mater. 2015, 4(3), 51-58. doi: 10.11648/j.am.20150403.12

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AMA Style

Patrick Mwinzi Mwathe, Robinson Musembi, Mathew Munji, Francis Nyongesa, Benjamin Odari, et al. Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique. Adv Mater. 2015;4(3):51-58. doi: 10.11648/j.am.20150403.12

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@article{10.11648/j.am.20150403.12,
  author = {Patrick Mwinzi Mwathe and Robinson Musembi and Mathew Munji and Francis Nyongesa and Benjamin Odari and Walter Njoroge and Bernard Aduda and Boniface Muthoka},
  title = {Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique},
  journal = {Advances in Materials},
  volume = {4},
  number = {3},
  pages = {51-58},
  doi = {10.11648/j.am.20150403.12},
  url = {https://doi.org/10.11648/j.am.20150403.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20150403.12},
  abstract = {In this study doped SnO2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl4.5H2O), ammonium fluoride (NH4F) and palladium chloride (PdCl2). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm – 2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 4500C.  Sheet resistivity for the as prepared F: SnO2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO2 respectively. Low sheet resistivity of F: SnO2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO2 thin films good choice for making a transparent thin film gas sensors.},
 year = {2015}
}

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TY  - JOUR
T1  - Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique
AU  - Patrick Mwinzi Mwathe
AU  - Robinson Musembi
AU  - Mathew Munji
AU  - Francis Nyongesa
AU  - Benjamin Odari
AU  - Walter Njoroge
AU  - Bernard Aduda
AU  - Boniface Muthoka
Y1  - 2015/04/27
PY  - 2015
N1  - https://doi.org/10.11648/j.am.20150403.12
DO  - 10.11648/j.am.20150403.12
T2  - Advances in Materials
JF  - Advances in Materials
JO  - Advances in Materials
SP  - 51
EP  - 58
PB  - Science Publishing Group
SN  - 2327-252X
UR  - https://doi.org/10.11648/j.am.20150403.12
AB  - In this study doped SnO2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl4.5H2O), ammonium fluoride (NH4F) and palladium chloride (PdCl2). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm – 2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 4500C.  Sheet resistivity for the as prepared F: SnO2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO2 respectively. Low sheet resistivity of F: SnO2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO2 thin films good choice for making a transparent thin film gas sensors.
VL  - 4
IS  - 3
ER  -

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