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Synthesis of Silicon Nanostructures: Comparative Study

Received: 23 December 2012    Accepted:     Published: 20 February 2013
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Abstract

Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.

DOI 10.11648/j.am.20130201.12
Published in Advances in Materials (Volume 2, Issue 1, February 2013)
Page(s) 6-11
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

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Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Laser Ablation, Laser Annealing, Silicon Nanostructures

References
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[4] L. Koker and K. Kolasiniski, "In situ photoluminescence studies of photochemically grown porous silicon", Mat.Sci. & Eng B. 69-70, 2000, pp.132.
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[8] H. Mavi, B. Rasheed, A. Shukla, S. Abbi, and K. Jain, "Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon" J.Phys.D:Appl.Phys.34, 2001, 292.
[9] E. Teo, B. Breese, A. Bettiol, D. Karasi, R. Chameaux, F. Watt, and D. Blackwood, "Multicolor Photoluminescence from Porous Silicon Using Focused, High-Energy Helium Ions" Adv. Mater, 18, 2006, pp. 51.
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[12] M. Beale, J. Benjamine and A. Cullis, "Microstructure and formation mechanism of porous silicon" Appl. Phys. Lett. 46, 1985, pp. 86.
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[14] P. Deak, Z. Hajnal and D. Fuchs, "Correlation between the luminescence and Raman peaks in quantum-confined systems" Thin Solid Films, 255, 1995, pp. 241.
[15] N. Mathews, P. Sebastian and V. Agrawal, "Photoelectro-chemical characterization of porous Si", Int.J.Hydr.Enegy, 28, 2003, pp. 629.
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[18] A. Abed and B. Rasheed, "Study the Effect of CO2 Laser Annealing on Silicon Nanostructures", Modern Applied Science, 4, 2010, pp. 56.
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  • Applied sciences department, University of Technology, Baghdad - IRAQ

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    Bassam G. Rasheed. (2013). Synthesis of Silicon Nanostructures: Comparative Study. Advances in Materials, 2(1), 6-11. https://doi.org/10.11648/j.am.20130201.12

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  • @article{10.11648/j.am.20130201.12,
      author = {Bassam G. Rasheed},
      title = {Synthesis of Silicon Nanostructures: Comparative Study},
      journal = {Advances in Materials},
      volume = {2},
      number = {1},
      pages = {6-11},
      doi = {10.11648/j.am.20130201.12},
      url = {https://doi.org/10.11648/j.am.20130201.12},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.am.20130201.12},
      abstract = {Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.},
     year = {2013}
    }
    

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    T1  - Synthesis of Silicon Nanostructures: Comparative Study
    AU  - Bassam G. Rasheed
    Y1  - 2013/02/20
    PY  - 2013
    N1  - https://doi.org/10.11648/j.am.20130201.12
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    PB  - Science Publishing Group
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    AB  - Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.
    VL  - 2
    IS  - 1
    ER  - 

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