American Journal of Physical Chemistry

| Peer-Reviewed |

Effect of an External Applied Potential on the Photocatalytic Properties of Manganese-Doped Titanium Dioxide

Received: 14 August 2014    Accepted: 19 August 2014    Published: 30 August 2014
Views:       Downloads:

Share This Article

Abstract

The electrochemical anodic oxidation method was used to prepare thin films of titanium dioxide (TiO2) semiconductors (undoped and doped with Mn). These films were used to test the oxidation of methanol (CH3OH), the degree of which was quantified by measuring the current density produced as a function of an applied potential between 0.5 V and 5.0 V. The value of the potential to be applied in order to prevent fast electron-hole recombination was determined. The observed phenomenon is explained by considering the wave nature of the electron.

DOI 10.11648/j.ajpc.20140304.11
Published in American Journal of Physical Chemistry (Volume 3, Issue 4, August 2014)
Page(s) 41-46
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Anodic Oxidation, TiO2, Mn-Doped TiO2, Applied Bias, Tunnelling Process

References
[1] B. Ekoko, S. Jianian, S. XianRong, Thin Solid Films. 515 (2007) 5287-5397.
[2] D.M. Blake, Bibliography of work on the heterogeneous photocatalytic removal of hazardous compounds from water and air, in : National Technical Information Service, US Department of Commerce, Springfield, USA, Update n° 4. (2001).
[3] A. Fujishima, K. Honda, Nature. 238 (1972) 37-38.
[4] R.I. Subramanian, V.M. Kuno, P.V. Kamat, J. Am. Chem. Soc. 128 (2006) 2385-2393.
[5] J.Y. Shi, W.H. Leng, W.C. Zhu, Chem. Eng. Technol. 29 (2006) 146-154.
[6] T.A. McMurray, J.A. Byrne, P.S. Dunlop, J. Appl. Electrochem. 25 (2005) 723-731.
[7] C. Junshui, L. Meichuan, L.Z. Jidong, J. Environ. Manage. (2004) 43-47.
[8] C. He, Y. Xiong, Z. Xihai, Thin Solid Films. 422 (2002) 235-238.
[9] A. Taicheng, Z. Xihai, Y. Xiong, Mater. Phys. Mech. 4 (2001) 101-106.
[10] C.A. Morris, M.L. Anderson, R.M. Stroud, Science. 23 (1999) 622-624.
[11] A. Burns, W. Li, C. Baker, Res. Soc. Symp: Proc. 703 (2003) V.5.2.1.
[12] L. Davydov, F.P. Amaat, S.P. George, U.S. Patent, 6 (2003) 585, 863.
[13] A.M. Baraka, H.A. Hamed, H.H. Shaarawy, J. Anti-Corros. Method. Mater. 49 (2002) 282-286.
[14] I. Vrublevsky, V. Parkoun, V. Sokol, J. Schreckenbach, J. Appl. Surf. Sci. 236 (2004) 270-277.
[15] Vrublevsky, I. ; Parkoun, V. ; Schreckenbach, J. ; Max, G. J. Appl. Surf. Sci. 227 (2004) 282-292.
[16] I. Vrublevsky, V. Parkoun, V. Sokol, J. Schreckenbach, G. Max, J. Appl. Surf. Sci. 222 (2004) 215-225.
[17] J.R. Birch, T.D. Burleigh, J. Corrosion. 56 (2000) 1233-1241.
[18] R. Palombari, M. Ranchella, C. Rol, G.V. Sebastiani, J. Sol. Energ. Mat. Cell. 71 (2002) 359-368.
[19] J.C. Myland, K.B. Oldham, Anal. Chem. 72 (2000) 3210-3217.
[20] G.A. Ragoisha, A.S. Bondarenko, Electrochemistry : New research potentiodynamic electrochemical impedance spectroscopy, M. Nunez (Ed.), Nova Science Publ., New York. (2005) 51-75.
[21] T. Ohsaka, F. Izumi, Y. Fujiki, J. Raman Spectrosc. 7 (1978) 321-324.
[22] U. Balachandran, N.G. Eror, N.G., J. Solid State Chem. 42 (1982) 276-282.
[23] A. Linsbigler, C. Rusu, Y.T. Yates, J.Am.Chem.Soc. 118 (1996) 5284-5289.
[24] P.V. Kamat, J. Pure Appl. Chem. 74 (2002) 1693-1706.
[25] P.V. Kamat, J. Phys. Chem. B. 106 (2002) 7729-7744.
[26] T. Hirakawa, P.V. Kamat, J. Am. Chem. Soc. 127 (2005) 3928-3934.
[27] H. Gerischer, A. Heller, J. Phys. Chem. 95 (1991) 5261-5267.
[28] P.V. Kamat, Pure Appl. Chem. 74 (2002) 1693-1706.
[29] S.M. Mc Murry, Quantum Mechanics, Addison-Wesley Publishing Company Inc.(1994).
Author Information
  • Department of Chemistry, University of Kinshasa, P. O. Box 190, Kinshasa XI, Democratic Republic of Congo

  • Department of Chemistry, University of Kinshasa, P. O. Box 190, Kinshasa XI, Democratic Republic of Congo

  • Department of Chemistry, University of Kinshasa, P. O. Box 190, Kinshasa XI, Democratic Republic of Congo

  • Department of Chemistry, University of Kinshasa, P. O. Box 190, Kinshasa XI, Democratic Republic of Congo

  • Department of Chemistry, University of Kinshasa, P. O. Box 190, Kinshasa XI, Democratic Republic of Congo

Cite This Article
  • APA Style

    Gracien Bakambo Ekoko, Joseph Kanza-Kanza Lobo, Omer Muamba Mvele, Jérémie Lunguya Muswema, Jean-Félix Senga Yamambe. (2014). Effect of an External Applied Potential on the Photocatalytic Properties of Manganese-Doped Titanium Dioxide. American Journal of Physical Chemistry, 3(4), 41-46. https://doi.org/10.11648/j.ajpc.20140304.11

    Copy | Download

    ACS Style

    Gracien Bakambo Ekoko; Joseph Kanza-Kanza Lobo; Omer Muamba Mvele; Jérémie Lunguya Muswema; Jean-Félix Senga Yamambe. Effect of an External Applied Potential on the Photocatalytic Properties of Manganese-Doped Titanium Dioxide. Am. J. Phys. Chem. 2014, 3(4), 41-46. doi: 10.11648/j.ajpc.20140304.11

    Copy | Download

    AMA Style

    Gracien Bakambo Ekoko, Joseph Kanza-Kanza Lobo, Omer Muamba Mvele, Jérémie Lunguya Muswema, Jean-Félix Senga Yamambe. Effect of an External Applied Potential on the Photocatalytic Properties of Manganese-Doped Titanium Dioxide. Am J Phys Chem. 2014;3(4):41-46. doi: 10.11648/j.ajpc.20140304.11

    Copy | Download

  • @article{10.11648/j.ajpc.20140304.11,
      author = {Gracien Bakambo Ekoko and Joseph Kanza-Kanza Lobo and Omer Muamba Mvele and Jérémie Lunguya Muswema and Jean-Félix Senga Yamambe},
      title = {Effect of an External Applied Potential on the Photocatalytic Properties of Manganese-Doped Titanium Dioxide},
      journal = {American Journal of Physical Chemistry},
      volume = {3},
      number = {4},
      pages = {41-46},
      doi = {10.11648/j.ajpc.20140304.11},
      url = {https://doi.org/10.11648/j.ajpc.20140304.11},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ajpc.20140304.11},
      abstract = {The electrochemical anodic oxidation method was used to prepare thin films of titanium dioxide (TiO2) semiconductors (undoped and doped with Mn). These films were used to test the oxidation of methanol (CH3OH), the degree of which was quantified by measuring the current density produced as a function of an applied potential between 0.5 V and 5.0 V. The value of the potential to be applied in order to prevent fast electron-hole recombination was determined. The observed phenomenon is explained by considering the wave nature of the electron.},
     year = {2014}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - Effect of an External Applied Potential on the Photocatalytic Properties of Manganese-Doped Titanium Dioxide
    AU  - Gracien Bakambo Ekoko
    AU  - Joseph Kanza-Kanza Lobo
    AU  - Omer Muamba Mvele
    AU  - Jérémie Lunguya Muswema
    AU  - Jean-Félix Senga Yamambe
    Y1  - 2014/08/30
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ajpc.20140304.11
    DO  - 10.11648/j.ajpc.20140304.11
    T2  - American Journal of Physical Chemistry
    JF  - American Journal of Physical Chemistry
    JO  - American Journal of Physical Chemistry
    SP  - 41
    EP  - 46
    PB  - Science Publishing Group
    SN  - 2327-2449
    UR  - https://doi.org/10.11648/j.ajpc.20140304.11
    AB  - The electrochemical anodic oxidation method was used to prepare thin films of titanium dioxide (TiO2) semiconductors (undoped and doped with Mn). These films were used to test the oxidation of methanol (CH3OH), the degree of which was quantified by measuring the current density produced as a function of an applied potential between 0.5 V and 5.0 V. The value of the potential to be applied in order to prevent fast electron-hole recombination was determined. The observed phenomenon is explained by considering the wave nature of the electron.
    VL  - 3
    IS  - 4
    ER  - 

    Copy | Download

  • Sections