Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons
International Journal of Materials Science and Applications
Volume 9, Issue 2, March 2020, Pages: 25-33
Received: Mar. 27, 2020; Accepted: Apr. 20, 2020; Published: May 18, 2020
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Authors
Modou Faye, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Ousmane Ngom, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Saliou Ndiaye, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Cheikh Mbow, Department of Physics, Laboratory of Fluid Mechanics, Hydraulics and Transfers, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Bassirou Ba, Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
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Abstract
The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.
Keywords
Diffusion Lengths, Adimensional Numbers, Mobility, Excitons
To cite this article
Modou Faye, Ousmane Ngom, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba, Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons, International Journal of Materials Science and Applications. Vol. 9, No. 2, 2020, pp. 25-33. doi: 10.11648/j.ijmsa.20200902.11
Copyright
Copyright © 2020 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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