Effect of Acid Etching Time and Concentration on Oxygen Content of Powder on the Microstructure and Elastic Properties of Silicon Carbide Densified by SPS
International Journal of Materials Science and Applications
Volume 9, Issue 1, January 2020, Pages: 7-13
Received: Jan. 27, 2020;
Accepted: Feb. 12, 2020;
Published: Feb. 28, 2020
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Zeynep Ayguzer Yasar, Design, Osmancık Omerderindere Vocational School, Hitit University, Corum, Turkey
Richard Haber, Department of Material Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, USA
In this current paper, oxygen content of a fine particle size SiC (H. C. Starck UF 25 Silicon Carbide) and coarser particle size SiC (Saint Gobain Silicon Carbide) were modified by using different concentrations of HF for etching. Fully dense silicon carbide ceramics (>99% th. density) were produced by the spark plasma sintering technique at 1950 °C under an applied pressure of 50 MPa for 5 min hold with boron carbide and carbon addition. Archimedes method, scanning electron microscopy, and the ultrasound analysis were used to examined density, microstructure, elastic (E), shear (G), and bulk (K) moduli of dense silicon carbide ceramics to investigate the effect of oxygen impurities on the densification and the properties of silicon carbide. The results showed that high oxygen content is detrimental to the final density of SPS silicon carbide. When the oxygen content increased from 0.60 to 5.92 wt.%, the relative density decreased from 99.99% to 96%. For both SiC powders, by increasing the etching time, the grain size of SiC decreased. It means that the high oxygen caused grain growth. Ultrasound analysis results showed that the high oxygen content affected the elastic properties. SiC samples with the high oxygen content had a lower elastic moduli, shear moduli and bulk moduli. It was clear that increasing the oxygen content decreased the elastic properties.
Zeynep Ayguzer Yasar,
Effect of Acid Etching Time and Concentration on Oxygen Content of Powder on the Microstructure and Elastic Properties of Silicon Carbide Densified by SPS, International Journal of Materials Science and Applications.
Vol. 9, No. 1,
2020, pp. 7-13.
K. Raju, D.-H. Yoon, Sintering additives for SiC based on the reactivity: a review, Ceram. Int. 42 (16) (2016) 17947–17962.
D. Moskovskikh, Y. Song, S. Rouvimov, A. Rogachev, A. Mukasyan, Silicon carbide Ceramics: mechanical activation, Combustion and spark plasma sintering, Ceram. Int. 42 (11) (2016) 12686–12693.
J. Zhang, D. Jiang, Q. Lin, Z. Chen, Z. Huang, Properties of silicon carbide ceramics from gelcasting and pressureless sintering, Mater. Des. (1980–2015) 65 (2015) 12–16.
G. Magnani, A. Brentari, E. Burresi, G. Raiteri, Pressureless sintered silicon carbide with enhanced mechanical properties obtained by the two-step sintering method, Ceram. Int. 40 (1) (2014) 1759–1763.
B. P. Groth, On the use of Raman spectroscopy and instrumented indentation for characterizing damage in machined carbide ceramics, Rutgers The State University of New Jersey-New Brunswick 2013.
D. M. Slusark, The effect of microstructural variation on the mechanical and acoustic properties of silicon carbide, Rutgers The State University of New Jersey-New Brunswick 2012.
K. K. Saxena, S. Agarwal, S. K. Khare, Surface characterization, material removal mechanism and material migration study of micro EDM process on conductive SiC, Procedia CIRP, 42 (2016) 179-184.
B. Lanfant, Y. Leconte, G. Bonnefont, V. Garnier, Y. Jorand, S. Le Gallet, M. Pinault, N. Herlin-Boime, F. Bernard, G. Fantozzi, Effects of carbon and oxygen on the spark plasma sintering additive-free densification and on the mechanical properties of nanostructured SiC ceramics, Journal of the European Ceramic Society, 35 (2015) 3369-3379.
D. Ahmoye, Pressureless Sintering and Mechanical Properties of Silicon Carbon Composites with in-situ Converted Titanium Dioxide to Titanium Carbon, 2010.
H. Liang, X. Yao, Z. Huang, Y. Zeng, B. Su, Effect of sintering techniques on the microstructure of liquid-phase-sintered SiC ceramics, J. Eur. Ceram. Soc. 36 (8) (2016) 1863–1871.
P. Šajgalík, J. Sedláček, Z. Lenčéš, J. Dusza, H.-T. Lin, Additive-free hot-pressed silicon carbide ceramics—A material with exceptional mechanical properties, Journal of the European Ceramic Society, 36 (6) (2016) 1333–1341.
J. Roy, S. Chandra, S. Das, S. Maitra, Oxidation behaviour of silicon carbide-a review, Rev. Adv. Mater. Sci, 38 (2014) 29-39.
J. Quanli, Z. Haijun, L. Suping, J. Xiaolin, Effect of particle size on oxidation of silicon carbide powders, Ceramics international, 33 (2007) 309-313.
J. Evans, Pressureless Sintering of Boron Carbide, Imperial College London Department of Materials Science and Engineering, London, (2014).
Z. Ayguzer Yasar, V. A. DeLucca, R. A. Haber, Influence of oxygen content on the microstructure and mechanical properties of SPS SiC, Ceramics international (2018) 23248–23253.
S. Grasso, T. Saunders, H. Porwal, M. Reece, Ultra-high temperature spark plasma sintering of α-SiC, Ceramic international 41 (2015) 225–230.
H. Tanaka, Silicon carbide powder and sintered materials, Journal of the Ceramic Society of Japan, 119 (2011) 218-233.
M. Balog, K. Sedlackova, P. Zifcak, and J. Janega, Liquid phase sintering of SiC with rare-earth oxides, Ceramics- Silikaty, 49 (2005) 259-262.
L. Stobierski and A. Gubernat, Sintering of silicon carbide I. Effect of carbon, Ceramics international, 29 (2003) 287-292. 145
W. J. Clegg, Role of Carbon in the Sintering of Boron‐Doped Silicon Carbide, Journal of the American Ceramic Society, 83 (2000) 1039-1043.
W. v. Rijswijk and D. J. Shanefield, Effects of carbon as a sintering aid in silicon carbide, Journal of the American Ceramic Society, 73 (1990) 148-149.
R. Hamminger, Carbon inclusions in sintered silicon carbide, Journal of the American Ceramic Society, 72 (1989) 1741-1744.
M. Rączka, G. Górny, L. Stobierski, and K. Rożniatowski, Effect of carbon content on the microstructure and properties of silicon carbide-based sinters, Materials characterization, 46 (2001) 245-249.
G. Magnani, G. Sico, A. Brentari, P. Fabbri, Solid-state pressureless sintering of silicon carbide below 2000∘C, Journal of the European Ceramic Society, 3 (2014) 4095-4098.
Z. Munir, U. Anselmi-Tamburini, and M. Ohyanagi, The effect of electric field and pressure on the synthesis and consolidation of materials: a review of the spark plasma sintering method, Journal of Materials Science, 41 (2006) 763-777.
F. Guillard, A. Allemand, J.-D. Lulewicz, and J. Galy, Densification of SiC by SPS-effects of time, temperature and pressure, Journal of the European ceramic Society, 27 (2007) 2725-2728.
S. Hayun, V. Paris, R. Mitrani, S. Kalabukhov, M. P. Dariel, E. Zaretsky, N. Frage, Microstructure and mechanical properties of silicon carbide processed by spark plasma sintering (SPS) Ceramics international, 38 (2012) 6335-6340.
M. Wilhelm, M. Kornfeld, W. Wruss, Development of SiC–Si composites with fine-grained SiC microstructures, Journal of the European Ceramic Society, 19 (1999) 2155-2163.
R. Vassen, D. Stöver, Processing and properties of nanograin silicon carbide, Journal of the American Ceramic Society, 82 (1999) 2585-2593.