Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications
International Journal of Materials Science and Applications
Volume 7, Issue 5, September 2018, Pages: 167-173
Received: Jul. 31, 2018; Accepted: Aug. 27, 2018; Published: Sep. 28, 2018
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Muhammad Sana Ullah, Department of Electrical and Computer Engineering, Florida Polytechnic University, Lakeland, USA
Emadelden Fouad, Department of Natural Science, Florida Polytechnic University, Lakeland, USA
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Continuous reducing the size of transistor technology has enabled extraordinary improvements in the switching speed, density, functionality and cost of microprocessors. Integrated Circuit industry is pursuing Moore’s curve down to deep-nanoscale dimensions. Advanced transistor technology now faces many challenges that together result in static power consumption due to leakage currents. In fact, leakage currents are responsible for more than 50% of the total power consumption in nanoscale designs. In deep-nanoscale arena, this percentage will increase further. However, diagnosing of the interface quality and interaction between insulators and semiconductors is significant to reduce the leakage current and achieve the high performance of switching devices in the nanoscale domain. Continuous scaling down has required drastic decreases of the SiO2 dielectric film thickness to achieve ever-higher capacitance densities. Fundamental limits of SiO2 as a dielectric material, imposed by electron tunneling, will be reached as this SiO2 film thickness approaches ~1nm. Therefore, alternate high-k interlayer dielectric material will be needed to replace SiO2 as a capacitor and gate dielectric material. Numerous alternate high-k materials are being actively investigated, ranging from Al2O3 (k ~ 9) to HfO2 (k ~ 25). High-k materials hold the promise of achieving very high capacitance densities with relatively thick films.
Dielectric Materials, High-k Materials, Hafnium Oxide, MOS Transistor, Nanoscale Domain
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Muhammad Sana Ullah, Emadelden Fouad, Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications, International Journal of Materials Science and Applications. Vol. 7, No. 5, 2018, pp. 167-173. doi: 10.11648/j.ijmsa.20180705.11
Copyright © 2018 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License ( which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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