Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

Sabur Abiodun Ayinde; Adetokunbo T. Famojuro; Oladepo Fasakin; Bolutife Olofinjana; Adetayo Victor Adedeji; Moses Sesan Eluyemi; Marcus Adebola Eleruja; Ezekiel Oladele Bolarinwa Ajayi

doi:doi:10.11648/j.ijmsa.20170604.19

Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique

Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, Moses Sesan Eluyemi, Marcus Adebola Eleruja, Ezekiel Oladele Bolarinwa Ajayi

Published in International Journal of Materials Science and Applications (Volume 6, Issue 4)

Received: 4 January 2016 Accepted: 28 June 2017 Published: 26 July 2017

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Abstract

A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm³/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1 and were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.

Published in	International Journal of Materials Science and Applications (Volume 6, Issue 4)
DOI	10.11648/j.ijmsa.20170604.19
Page(s)	223-229
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Copper Cadmium Oxy-Sulphide, Precursor, Metal Organic Chemical Vapor Deposition (MOCVD), Thin Film, Characterization

References

[1]	N. A. Shah, W. A. Syed, M. A. Atta, M. Ajmal, A. Ali and A. Maqsood. Nanosci. Nanotechnol. Lett. 1 (2009) 62.
[2]	A. V. Feitosa, M. A. Miranda, J. M. Sasaki and M. A. Araujo-Silva, Braz. J. Phys.,34, 2B, (2004) 656-658.
[3]	P. K. Nair, O. Gomezdaza and M. T. S. Nair, Adv. Mater. Opt. Electr., 1 (1992) 139.
[4]	J. T. Hu, T. W. Odom and C. M. Lieber. Acc. Chem. Res. 32 (1999) 435.
[5]	L. Isac, A. Duta and A. Kriza. Thin Solid Films, 15 (2007) 5755-5758.
[6]	E. Ienei, L. Isac and A. Duta. Revue Roumaine de Chimie, 3 (2010) 161-165.
[7]	A. G. Rolo, U. Gonde and M. J. M. Gomes. Thin Solid Films, 318 (1998) 108-112.
[8]	J. Juza and J. Cermak. Chemical Engineering Science, 35(1), (1980) 429-436.
[9]	M. A. Barote, A. A. Yadav, T. V. Chavan and E. U. Masumdar. Digest J. Nanomaterials and Biostructures, 6 (2011) 979-990.
[10]	O. B. Ajayi, O. K. Osutola, I. A. Ojo and C. Jeynes. Thin Solid Films, 248 (1994) 57-63.
[11]	N. Romeo, A. Bosio and A. Romeo. Solar Energy Mater. Solar Cells (2008) 45-55.
[12]	A. A. Bosak, C. Duboudieu, J. P. Sènateur, O. Y. Gorbenko and A. R. Kaul. Journal of Materials Chemistry, 12(4), (2002) 800-801.
[13]	M. A. Eleruja, A. V. Adedeji, I. A. O. Ojo, A. Djebah, O. Osasona, J. B. Aladekomo and E. O. B. Ajayi. Optical Materials, 10 (1998) 257-263.
[14]	A. V. Adedeji, M. A. Eleruja, I. A. O. Ojo, A. Djebah, O. Osasona, J. O. Olowolafe, J.B. Aladekomo and E. O. B. Ajayi: Opt. Mater., 2000, 14, 345.
[15]	B. Olofinjana, G. O. Egharevba, M. A. Eleruja, C. Jeynes, A. V. Adedeji, O. O. Akinwunmi, B. A. Taleatu, C. U. Mordi, and E. O. B. Ajayi. Journal of Materials Science & Technology 26, no. 6 (2010): 552-557.
[16]	E. Omotoso, G. A. Adegboyega, M. A. Eleruja, B. Olofinjana, O. O. Akinwunmi, O. O. Ilori, B. A. Taleatu, E. O. B. Ajayi. Journal of Non Oxide Glasses. Vol. 5, No. 1, 2013, p. 9 – 19.
[17]	N. A. Shah. Journal of Alloys and Compounds 512 (2012) 185–189.
[18]	S. O. Adekoya, M. A. Eleruja, B. Olofinjana, O. O. Akinwunmi, B. A. Taleatu, and E. O. B. Ajayi. In MRS Proceedings, vol. 1432 (2012) pp. mrss12-1432. Cambridge University Press.
[19]	R. Agarwal, N. K. Agarwal and R. Singh. Materials Focus, 3 (2014) 267-271.
[20]	U. Pal, R. Silva-Gonzalez, G. Mrtinez-Montes, M. Gracia-Jimenez, M. A. Vidal, Sh. Torres, Thin solid films 305 (1997) 345–350.
[21]	A. O. Awodugba, O. Adedokun and Y. K. Sanusi. IJRRAS, 12 (2012) 3-10.
[22]	V. N. Kumar, R. Suryakarthick, S. Karuppusamy, M. Gupta, Y. Hayakawa and R. Gopalakrishnan. RSC Advances, 5 (29), (2015) 23015-23021.
[23]	R. Ganesh, V. Senthil Kumar, K. Panneerselvam, and M. Raja. Arch. Phys. (2013) Res. 4.
[24]	A. A. Tariq and M. A. Jala. Journal of Electron Devices, 17 (2013) 1413-1427.
[25]	A. Ali, N. A. Shah, A. K. S. Aqili, A. Maqsood. J. Semicond. Sci. Technol. 21 (2006) 1296.
[26]	A. A. Najiba and A. H. S. Ameer. Diyala Journal for Pure Sciences, 8 (2012) No: 3.

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APA Style

Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, et al. (2017). Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. International Journal of Materials Science and Applications, 6(4), 223-229. https://doi.org/10.11648/j.ijmsa.20170604.19

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ACS Style

Sabur Abiodun Ayinde; Adetokunbo T. Famojuro; Oladepo Fasakin; Bolutife Olofinjana; Adetayo Victor Adedeji, et al. Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. Int. J. Mater. Sci. Appl. 2017, 6(4), 223-229. doi: 10.11648/j.ijmsa.20170604.19

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AMA Style

Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, et al. Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. Int J Mater Sci Appl. 2017;6(4):223-229. doi: 10.11648/j.ijmsa.20170604.19

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@article{10.11648/j.ijmsa.20170604.19,
  author = {Sabur Abiodun Ayinde and Adetokunbo T. Famojuro and Oladepo Fasakin and Bolutife Olofinjana and Adetayo Victor Adedeji and Moses Sesan Eluyemi and Marcus Adebola Eleruja and Ezekiel Oladele Bolarinwa Ajayi},
  title = {Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {4},
  pages = {223-229},
  doi = {10.11648/j.ijmsa.20170604.19},
  url = {https://doi.org/10.11648/j.ijmsa.20170604.19},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170604.19},
  abstract = {A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.},
 year = {2017}
}

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TY  - JOUR
T1  - Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique
AU  - Sabur Abiodun Ayinde
AU  - Adetokunbo T. Famojuro
AU  - Oladepo Fasakin
AU  - Bolutife Olofinjana
AU  - Adetayo Victor Adedeji
AU  - Moses Sesan Eluyemi
AU  - Marcus Adebola Eleruja
AU  - Ezekiel Oladele Bolarinwa Ajayi
Y1  - 2017/07/26
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170604.19
DO  - 10.11648/j.ijmsa.20170604.19
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 223
EP  - 229
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170604.19
AB  - A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.
VL  - 6
IS  - 4
ER  -

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Author Information

Sabur Abiodun Ayinde

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria; Department of Physics/Electronics, Federal Polytechnic, Ede, Nigeria
Adetokunbo T. Famojuro

Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria
Oladepo Fasakin

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Bolutife Olofinjana

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Adetayo Victor Adedeji

Department of Chemistry and Physics, Elizabeth City State University, Elizabeth City, NC, USA
Moses Sesan Eluyemi

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Marcus Adebola Eleruja

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
Ezekiel Oladele Bolarinwa Ajayi

Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria

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APA Style

Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, et al. (2017). Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. International Journal of Materials Science and Applications, 6(4), 223-229. https://doi.org/10.11648/j.ijmsa.20170604.19

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ACS Style

Sabur Abiodun Ayinde; Adetokunbo T. Famojuro; Oladepo Fasakin; Bolutife Olofinjana; Adetayo Victor Adedeji, et al. Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. Int. J. Mater. Sci. Appl. 2017, 6(4), 223-229. doi: 10.11648/j.ijmsa.20170604.19

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AMA Style

Sabur Abiodun Ayinde, Adetokunbo T. Famojuro, Oladepo Fasakin, Bolutife Olofinjana, Adetayo Victor Adedeji, et al. Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique. Int J Mater Sci Appl. 2017;6(4):223-229. doi: 10.11648/j.ijmsa.20170604.19

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@article{10.11648/j.ijmsa.20170604.19,
  author = {Sabur Abiodun Ayinde and Adetokunbo T. Famojuro and Oladepo Fasakin and Bolutife Olofinjana and Adetayo Victor Adedeji and Moses Sesan Eluyemi and Marcus Adebola Eleruja and Ezekiel Oladele Bolarinwa Ajayi},
  title = {Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {4},
  pages = {223-229},
  doi = {10.11648/j.ijmsa.20170604.19},
  url = {https://doi.org/10.11648/j.ijmsa.20170604.19},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170604.19},
  abstract = {A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Optical and Electrical Properties of Copper Doped Cadmium Oxy-Sulphide Quaternary Thin Films by MOCVD Technique
AU  - Sabur Abiodun Ayinde
AU  - Adetokunbo T. Famojuro
AU  - Oladepo Fasakin
AU  - Bolutife Olofinjana
AU  - Adetayo Victor Adedeji
AU  - Moses Sesan Eluyemi
AU  - Marcus Adebola Eleruja
AU  - Ezekiel Oladele Bolarinwa Ajayi
Y1  - 2017/07/26
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170604.19
DO  - 10.11648/j.ijmsa.20170604.19
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 223
EP  - 229
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170604.19
AB  - A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm3/min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1  and  were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.
VL  - 6
IS  - 4
ER  -

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