Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process

Ruyao Wang; Weihua Lu

doi:doi:10.11648/j.ijmsa.20160506.17

| Peer-Reviewed

Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process

Ruyao Wang, Weihua Lu

Published in International Journal of Materials Science and Applications (Volume 5, Issue 6)

Received: 27 September 2016 Accepted: 11 October 2016 Published: 9 November 2016

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

The achievement of hypereutectic Al-Si alloys with completely nodular eutectic Si has been studied. The procedure contained two steps: firstly, achieving hypereutectic direct electrolytic Al-Si alloys (HDEASA) with completely eutectic structure and secondly, spheroidizing eutectic Si upon soaking. HDEASAs with Si level in the range from 13.2 wt% to 17.6 wt% were made from direct electrolytic eutectic Al-Si alloy ingot and Al-50 wt% Si hardener. As cast microstructure of HDEASA was composed of primary-free quasi-eutectic cells. In comparison with commercial alloys, the lower heating temperature of 505°C -515°C for 4-8 hrs was required to fully spheroidize Si crystal, either fine fibrous or even flaky in casting. Most of the spheres ranged in size from 1.0μm to 4.0μm. Many measurements were focused on the variety of Si phase size in eutectic cells against the distance from the center of the cells. The origin of granulation of primary-free quasi-eutectic Si crystal is associated with its thermodynamic structural instability, accompanied by crystallographic defects, related to the electrolytic process.

Published in	International Journal of Materials Science and Applications (Volume 5, Issue 6)
DOI	10.11648/j.ijmsa.20160506.17
Page(s)	277-283
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Hypereutectic Al-Si alloy, Electrolysis, Primary-Free Quasi-Eutectic Cell, Spheroidization, Silicon Nodule

References

[1]	J. L. Jorstad, AFS Trans. 117, 241 (2009).
[2]	C. Mascre, Foundry Trade J. 94, 725 (1953).
[3]	N. Tenekedjiev and J. E. Gruzleski. AFS Trans. 97, 127 (1989).
[4]	M. Adachi, J. Jpn. Inst. Light Met. 34, 430 (1984).
[5]	H. S. Dai and X. F. Liu, Mater. Sci. Technol. 25, 1183 (2009).
[6]	M. Tagami and Y. Serita, J. Jpn. Inst. Light Met. 22, 564 (1972).
[7]	J. H. Pan, Q. L. Cui and M. X. Wang, Special Casting & Nonferrous Alloy. 30, 85 (2010) (In Chinese).
[8]	H. K. Yi and D. Zhang, Trans. Nonferrous Met.Soc. China 13, 358 (2003).
[9]	H. H. Zhang, H. L. Duan, G. J. Shao, L. P. Xu, J. L. Yin and B. Yan, Rare Met. 25, 11 (2006).
[10]	T. Kowata, H. Horie, S. Hiratsuka and A. Chida, Imono. 66, 803 (1994) (In Japanese).
[11]	J. Y. Chang, I. G. Moon and C. S. Choi, J. Mater. Sci. 33, 5015 (1998).
[12]	Z. H. Qiu, Y. L. Li, H. Chen, J. C. Chen, G. D. Zhang and C. X. Pan, Special Casting&Nonferrous Alloys. 35, 632 (2015) (In Chinese).
[13]	Y. P. Wu, S. J. Wang, H. Li and X. F. Liu, J. Alloys Comp. 477, 139 (2009).
[14]	N. C. Liu, J. Q. Li and Z. X. Liu, Adv. Mate. Research. 160, 189 (2010).
[15]	X. Liu, Y. Wu and X. Bian, J. Alloys Comp. 391, 90 (2005).
[16]	W. W. Ding, T. D. Xia, W. J. Zhao and Y. T. Xu, Materials. 7, 1188 (2014).
[17]	H. S. Choi, H. M. Konishi and X. C. Li, Mater. Sci. Eng. A 541, 159 (2012).
[18]	H. S. Choi and X. C. Li, J. Mater. Sci. 47, 3096 (2012).
[19]	S. Popel, O. A. Tchikova, I. G. Brodova and V. V. Makeev, Nonferrous Met. no. 9, 53 (1992) (In Russian).
[20]	C. Xu and Q. C. Jiang, Mater.Sci.Engr. A437, 451 (2006).
[21]	J. Piatkowski and P. Kaminski, Archives of Foundry Engr. 15, 79 (2015).
[22]	D. Lu, Y. Jiang, G. Guan, R. Zhou, Z. Li and R. Zhou, J. Mater. Proc. Technol. 189, no. 1-3, 13- (2007).
[23]	F. C. RoblosHermandez and J. H. Sokolowski, J. Alloys Comp. 426, 205 (2006).
[24]	C. Y. Ban, Y. Han, Q. X. Ba and J. Z. Cui, Mater.Sci.Forum 546-549, 723 (2007).
[25]	L. J. He, J. Z. Wang, S. G. Qi, H. L. Du and Z. F. Zhao, Foundry China. 7, 153 (2010).
[26]	N. Apaydin and R. W. Smith, Mater.Sci. Engr. A, 98, 149 (1988).
[27]	F. Y. Cao, Y. D. Jia, K. G Prashanth, P. Ma, J. S. Liu, S. Scudino, F. Huang, J. Eckert and J. F. Sun. Mater. Design. 74, 150 (2015).
[28]	H. Y. Yeh, H. G. Yeh, R. Y. Wang and W. H. Lu, U.S. Patent 6, 261, 390 B1. July 17, 2001.
[29]	R. Y. Wang and W. H. Lu,. JOM64, 330 (2012).
[30]	D. M. Smith, U.S. Patent 4, 434, 014, Feb. 28, 1984.
[31]	M. Shamsuzzoha and F. Jueretzka, Dual Refinement of Primary and Eutectic Silicon in Hypereutectic Al-Si Alloys. Aluminum Alloys for Transportation, Packaging, Aerospace and other Applications. Proceedings of A Symposia Sponsored by the Light Metals Division of TMS and Ed. S. K. Das and W. M. Yin. pp. 153-162, TMS 2007 Annual Meeting and Exhibition.
[32]	R. Y. Wang, W. H. Lu and L. M. Hogan, Mater. Sci. Engr. A 348, 289 (2003).
[33]	R. Y. Wang, W. H. Lu and Z. Y. Ma, AFS Trans. 115, 241 (2007).
[34]	R. Y. Wang and W. H. Lu, Metall. Mater. Trans. A. 44, 2789 (2013).
[35]	P. Y. Zhu and Q. Y. Liu, Mater. Sci. Technol. 2, 500 (1986).
[36]	G. Q. Yang, Chinese Patent, ZL94 116 235.4, Sept. 28, 1994 (In Chinese).
[37]	G. Stuhldreier and K. W. Stoffregen, Giesserei. 68, 404 (1981).
[38]	K. W. Stoffregen, Giesserei, 72, 545 (1985).
[39]	L. F. Mondolfo, Aluminum Alloys, Structures and Properties. Butterworths and Co., London. 1979, pp. 513-15, 534-37, 566-75, 592-94, 604 and 617-18.
[40]	D. Apelian, G. K. Sigworth and K. R. Whaler. AFS Trans. 92, 297 (1984).
[41]	S. P. Li, X. C. Chen, O. M. Barabasch and S. P. Oschkoderov, Acta Metall.Sin. 31, A47 (1995) (In Chinese).
[42]	O. A. Atasoy, F. Yilmaz and R. Elliott, J. Crystal Growth, 66, 137 (1984).
[43]	D. C. Jenkinson and L. M. Hogan, J. Crystal Growth 28, 171 (1975).
[44]	H. A. H. Steen and A. Hellawell, Acta Metall. 20, 363 (1972).
[45]	El-BenawyTalaat and H. Fredriksson, J. Jap. Inst. Light Met. 41, 507 (2000).
[46]	M. Shamsuzzoha, L. M Hogan and L. M. Berry.. AFS Trans. 100, 619 (1992).
[47]	S. Z. Lu and A. Hellawell, J. Crystal Growth, 73, 316 (1985).
[48]	S. Z. Lu and A. Hellawell,. Metall. Trans. A. 18, 1721 (1987).
[49]	P. Y. Zhu, Q. Y. Liu and T. X. Hou,. AFS Trans. 93, 609 (1985).
[50]	E. Ogris, H. Lüchinger and P. J. Uggowitzer. Mater.Sci.Forum 396-402, 149 (2002).

Cite This Article

Plain Text BibTeX RIS

APA Style

Ruyao Wang, Weihua Lu. (2016). Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process. International Journal of Materials Science and Applications, 5(6), 277-283. https://doi.org/10.11648/j.ijmsa.20160506.17

Copy | Download

ACS Style

Ruyao Wang; Weihua Lu. Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process. Int. J. Mater. Sci. Appl. 2016, 5(6), 277-283. doi: 10.11648/j.ijmsa.20160506.17

Copy | Download

AMA Style

Ruyao Wang, Weihua Lu. Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process. Int J Mater Sci Appl. 2016;5(6):277-283. doi: 10.11648/j.ijmsa.20160506.17

Copy | Download

@article{10.11648/j.ijmsa.20160506.17,
  author = {Ruyao Wang and Weihua Lu},
  title = {Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {6},
  pages = {277-283},
  doi = {10.11648/j.ijmsa.20160506.17},
  url = {https://doi.org/10.11648/j.ijmsa.20160506.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160506.17},
  abstract = {The achievement of hypereutectic Al-Si alloys with completely nodular eutectic Si has been studied. The procedure contained two steps: firstly, achieving hypereutectic direct electrolytic Al-Si alloys (HDEASA) with completely eutectic structure and secondly, spheroidizing eutectic Si upon soaking. HDEASAs with Si level in the range from 13.2 wt% to 17.6 wt% were made from direct electrolytic eutectic Al-Si alloy ingot and Al-50 wt% Si hardener. As cast microstructure of HDEASA was composed of primary-free quasi-eutectic cells. In comparison with commercial alloys, the lower heating temperature of 505°C -515°C for 4-8 hrs was required to fully spheroidize Si crystal, either fine fibrous or even flaky in casting. Most of the spheres ranged in size from 1.0μm to 4.0μm. Many measurements were focused on the variety of Si phase size in eutectic cells against the distance from the center of the cells. The origin of granulation of primary-free quasi-eutectic Si crystal is associated with its thermodynamic structural instability, accompanied by crystallographic defects, related to the electrolytic process.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process
AU  - Ruyao Wang
AU  - Weihua Lu
Y1  - 2016/11/09
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160506.17
DO  - 10.11648/j.ijmsa.20160506.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 277
EP  - 283
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160506.17
AB  - The achievement of hypereutectic Al-Si alloys with completely nodular eutectic Si has been studied. The procedure contained two steps: firstly, achieving hypereutectic direct electrolytic Al-Si alloys (HDEASA) with completely eutectic structure and secondly, spheroidizing eutectic Si upon soaking. HDEASAs with Si level in the range from 13.2 wt% to 17.6 wt% were made from direct electrolytic eutectic Al-Si alloy ingot and Al-50 wt% Si hardener. As cast microstructure of HDEASA was composed of primary-free quasi-eutectic cells. In comparison with commercial alloys, the lower heating temperature of 505°C -515°C for 4-8 hrs was required to fully spheroidize Si crystal, either fine fibrous or even flaky in casting. Most of the spheres ranged in size from 1.0μm to 4.0μm. Many measurements were focused on the variety of Si phase size in eutectic cells against the distance from the center of the cells. The origin of granulation of primary-free quasi-eutectic Si crystal is associated with its thermodynamic structural instability, accompanied by crystallographic defects, related to the electrolytic process.
VL  - 5
IS  - 6
ER  -

Copy | Download

Author Information

Ruyao Wang

Institute of Materials Science and Engineering, Donghua University, Shanghai, China
Weihua Lu

Institute of Materials Science and Engineering, Donghua University, Shanghai, China

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Ruyao Wang, Weihua Lu. (2016). Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process. International Journal of Materials Science and Applications, 5(6), 277-283. https://doi.org/10.11648/j.ijmsa.20160506.17

Copy | Download

ACS Style

Ruyao Wang; Weihua Lu. Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process. Int. J. Mater. Sci. Appl. 2016, 5(6), 277-283. doi: 10.11648/j.ijmsa.20160506.17

Copy | Download

AMA Style

Ruyao Wang, Weihua Lu. Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process. Int J Mater Sci Appl. 2016;5(6):277-283. doi: 10.11648/j.ijmsa.20160506.17

Copy | Download

@article{10.11648/j.ijmsa.20160506.17,
  author = {Ruyao Wang and Weihua Lu},
  title = {Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {6},
  pages = {277-283},
  doi = {10.11648/j.ijmsa.20160506.17},
  url = {https://doi.org/10.11648/j.ijmsa.20160506.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160506.17},
  abstract = {The achievement of hypereutectic Al-Si alloys with completely nodular eutectic Si has been studied. The procedure contained two steps: firstly, achieving hypereutectic direct electrolytic Al-Si alloys (HDEASA) with completely eutectic structure and secondly, spheroidizing eutectic Si upon soaking. HDEASAs with Si level in the range from 13.2 wt% to 17.6 wt% were made from direct electrolytic eutectic Al-Si alloy ingot and Al-50 wt% Si hardener. As cast microstructure of HDEASA was composed of primary-free quasi-eutectic cells. In comparison with commercial alloys, the lower heating temperature of 505°C -515°C for 4-8 hrs was required to fully spheroidize Si crystal, either fine fibrous or even flaky in casting. Most of the spheres ranged in size from 1.0μm to 4.0μm. Many measurements were focused on the variety of Si phase size in eutectic cells against the distance from the center of the cells. The origin of granulation of primary-free quasi-eutectic Si crystal is associated with its thermodynamic structural instability, accompanied by crystallographic defects, related to the electrolytic process.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - Hypereutectic Al-Si Alloy with Completely Nodular Eutectic Silicon: Microstructure and Process
AU  - Ruyao Wang
AU  - Weihua Lu
Y1  - 2016/11/09
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160506.17
DO  - 10.11648/j.ijmsa.20160506.17
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 277
EP  - 283
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160506.17
AB  - The achievement of hypereutectic Al-Si alloys with completely nodular eutectic Si has been studied. The procedure contained two steps: firstly, achieving hypereutectic direct electrolytic Al-Si alloys (HDEASA) with completely eutectic structure and secondly, spheroidizing eutectic Si upon soaking. HDEASAs with Si level in the range from 13.2 wt% to 17.6 wt% were made from direct electrolytic eutectic Al-Si alloy ingot and Al-50 wt% Si hardener. As cast microstructure of HDEASA was composed of primary-free quasi-eutectic cells. In comparison with commercial alloys, the lower heating temperature of 505°C -515°C for 4-8 hrs was required to fully spheroidize Si crystal, either fine fibrous or even flaky in casting. Most of the spheres ranged in size from 1.0μm to 4.0μm. Many measurements were focused on the variety of Si phase size in eutectic cells against the distance from the center of the cells. The origin of granulation of primary-free quasi-eutectic Si crystal is associated with its thermodynamic structural instability, accompanied by crystallographic defects, related to the electrolytic process.
VL  - 5
IS  - 6
ER  -

Copy | Download