International Journal of Materials Science and Applications

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Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films

Received: 01 December 2015    Accepted:     Published: 01 December 2015
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Abstract

Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.

DOI 10.11648/j.ijmsa.20150405.23
Published in International Journal of Materials Science and Applications (Volume 4, Issue 5, September 2015)
Page(s) 364-367
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Pulsed Laser Deposition, ZnO, Al2O3, Thin Films, Resistance Rate, Target Material, Doping Quantity

References
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[2] 吴定财,胡志刚,段满益等.Co与Cu掺杂ZnO磁性薄膜的溶胶-凝胶旋涂法制备[J].半导体光电,2010,31(4):575-578。
[3] Kishwar S, ul Hasan K,Tzamalis G, et al. Electro-optical and Cathodoluminescence Properties of Low Temperature Grown ZnO Nanorods/p-GaN White Light Emitting Diodes[J].Phys. Stat. Sol.(a),2010,207(1):67-72.
[4] 张振飞,刘海瑞,张华等.ZnO/Ag微米球的合成与光催化性能[J].高等学校化学学报,2013,34(12):2827-2833。
[5] Makino T, Chia C H, Tuan Nguen T, et al. Radiative and nonradiative recombination processes in lattice-matched (Cd, Zn)O/(Mg, Zn)O multiquantum wells[J]. Appl. Phys. Lett, 2000, 77 (11): 1632-1634.
[6] Kim S, Nam G, Yoon H, et al. Structural, Optical, and Electrical Properties of Zn0 Thin Films Deposited by Sol-gel Dip-coating Process at Low Temperature[J]]. Electroraic Materials Lxtters, 2014, 10 (4):869-878.
[7] Kawaharamura T, Orita H, Shirahata T, et al. lnfluence of Annealing under Reducing Ambient on Properties of ZnO Thin Films Prepared by Mist CVD[J]. Physica Status Solidi(c), 2012, 9 (2):190-193.
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Author Information
  • School of Science, Shenyang University of Technology, Shenyang, China

  • School of Science, Shenyang University of Technology, Shenyang, China

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    Shuang Liu, Wei Wang. (2015). Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. International Journal of Materials Science and Applications, 4(5), 364-367. https://doi.org/10.11648/j.ijmsa.20150405.23

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    ACS Style

    Shuang Liu; Wei Wang. Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. Int. J. Mater. Sci. Appl. 2015, 4(5), 364-367. doi: 10.11648/j.ijmsa.20150405.23

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    AMA Style

    Shuang Liu, Wei Wang. Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films. Int J Mater Sci Appl. 2015;4(5):364-367. doi: 10.11648/j.ijmsa.20150405.23

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  • @article{10.11648/j.ijmsa.20150405.23,
      author = {Shuang Liu and Wei Wang},
      title = {Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films},
      journal = {International Journal of Materials Science and Applications},
      volume = {4},
      number = {5},
      pages = {364-367},
      doi = {10.11648/j.ijmsa.20150405.23},
      url = {https://doi.org/10.11648/j.ijmsa.20150405.23},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ijmsa.20150405.23},
      abstract = {Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.},
     year = {2015}
    }
    

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  • TY  - JOUR
    T1  - Pulsed Laser Deposition Methods Made Aluminum Doped ZnO Conductive Films
    AU  - Shuang Liu
    AU  - Wei Wang
    Y1  - 2015/12/01
    PY  - 2015
    N1  - https://doi.org/10.11648/j.ijmsa.20150405.23
    DO  - 10.11648/j.ijmsa.20150405.23
    T2  - International Journal of Materials Science and Applications
    JF  - International Journal of Materials Science and Applications
    JO  - International Journal of Materials Science and Applications
    SP  - 364
    EP  - 367
    PB  - Science Publishing Group
    SN  - 2327-2643
    UR  - https://doi.org/10.11648/j.ijmsa.20150405.23
    AB  - Zinc Oxide is a novel semiconductor compound of II-VI group of the 3.37eV band gap. At room temperature, its exciton binding energy is 60 meV, which is one of the most potential light emitting devices in the field of ultraviolet. This experiment, using pulsed laser deposition, prepareing ZnO conductive films doping Al2O3 on silicon substrates and adopting ZnO waler, sintered, with Al2O3 as the target material, studies the influence of the dopant amount of alumina on thin film electrical conductivity and film crystallization conditions. The result shows: The thin film prepared by pulsed laser deposition method is mixed evenly, easy to control. Moreover, when the doping quantity of Al2O3 is 3.5%, the ZnO thin film has the least resistance rate and its crystallization is in the best condition.
    VL  - 4
    IS  - 5
    ER  - 

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