Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films

R. A. Chikwenze; P. A. Nwofe; P. E. Agbo; S. N. Nwankwo; J. E. Ekpe; F. U. Nweke

doi:doi:10.11648/j.ijmsa.20150402.15

| Peer-Reviewed |

Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films

R. A. Chikwenze, P. A. Nwofe, P. E. Agbo, S. N. Nwankwo, J. E. Ekpe, F. U. Nweke

Received: 3 February 2015 Accepted: 24 February 2015 Published: 17 March 2015

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

In this study, the effect of dip time on the structural and optical properties of cadmium selenide (CdSe) thin films grown by the chemical bath deposition method is reported. The films were grown with varying dip time in the range of 4 h to 12h, and the other deposition variables (substrate temperature, source to substrate distance, pH, and concentration) were kept constant. X-ray diffractometry (XRD) and optical spectroscopy were used to characterise the layers. The results show that the crystallite size and the film thickness increased with an increase in the dip time up to a “critical value” and then decreased otherwise for the latter. The increase in the crystallite size was more pronounced at the lower dip time (< 8 h), and then exhibited a marginal increase for dip time > 8 h. The energy band gap was found to be direct with an optimum value of 1.2 eV obtained for films grown at a dip time of 8 h.

DOI	10.11648/j.ijmsa.20150402.15
Published in	International Journal of Materials Science and Applications (Volume 4, Issue 2, March 2015)
Page(s)	101-106
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Dip Time, Film Thickness, Crystallite Size, Energy Bandgap

References

[1]	D. Aaron, R. Barkhouse, O. Gunawan, T. Gokmen, T.K. Todorov and D. B. Mitzi, “Device Characterisation of a 10.1% hydrazine-processed Cu2ZnSn(Se, S)4 solar cell,” Prog. Photovotaic. Res. Appl., vol. 20, pp. 6–11, 2012.
[2]	P.A. Nwofe, K.T. Ramakrishna Reddy and R.W. Miles “Effects of sulphur and air annealing on the properties of thermally evaporated SnS layers for application in thin film solar cell devices” J. Renewable & Sustainable Energy, Vol. 5, pp. 011024, 2013.
[3]	P.A. Nwofe, K.T. Ramakrishna Reddy and R.W. Miles “Determination of the Minority Carrier Diffusion Length of SnS Using Electro-optical Measurements” Electron Mater Letts, Vol. 9(3), pp. 363-366, 2013.
[4]	P.A. Nwofe, (2013). Deposition and Characterisation of SnS Thin Films for Application in Photovoltaic Solar Cell Devices, Ph.D Thesis, Northumbria University, United Kingdom
[5]	P. Sinsermsuksakul, L. Sun, S. Woon Lee, H. Hejin Park, S. Bok Kim, C. Yang and R. G. Gordon, “Overcoming efficiency limitations in SnS-based solar cells”, Advanced Energy Materials, vol. 4(15) pp. 1400496, 2014.
[6]	K. Hartman (2013). Proceedings of the Materials Research Society. Accessed January 3, 2015 at: www.mrs.org/fall-2013-meeting-scene-day-4/.
[7]	A. L. Fahrenbruch, R. H. Bube, Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion, Academic Press, New York (1983).
[8]	S.M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons, New York, 1985.
[9]	A.O. Oduor and R. D. Gould. "Space-charge-limited conductivity in evaporated cadmium selenide thin films", Thin Solid Films, vol. 270, pp. 387-390, 1995.
[10]	A.O. Oduor and R. D. Gould. "A comparison of the DC conduction properties in evaporated cadmium selenide thin films using gold and aluminium electrodes", Thin Solid Films, vol. 317, pp. 409-412, 1998.
[11]	D. Nesheva, D. Arsova, and R. Ionov. "Thin and superthin photoconductive CdSe films deposited at room substrate temperature", Journal of materials science, vol. 28, pp. 2183-2186, 1993.
[12]	F. Raoult, B. Fortin, and Y. Colin, "Standardization and stabilization of the resistivity-temperature characteristics of CdSe thin films by vacuum annealing", Thin Solid Films, vol. 182 pp. 1-14, 1989.
[13]	H. Richter, 20th IEEE photovoltaics specialists conf., New York, pp. 1537, 1988.
[14]	A.K. Pal, A. Mondal, and S. Chaudhuri. "Preparation and characterization of ZnTe/CdSe solar cells", Vacuum, vol. 41, pp. 1460-1462, 1990.
[15]	M. Roth, “Advantages of limitations of Cadmium Selenide room temperature gamma ray detectors” Nucl. Instrum. Methods UK, vol. A283, pp. 291, 1989.
[16]	J. Levinson, F.R. Shepherd, P.J. Scanlon, W.D. Westwood, G. Este, and M. Rider, “Conductivity behavior in polycrystalline semiconductor thin film transistors”, Journal of Applied Physics, vol. 53(2), pp. 1193-1202, 1982.
[17]	F.Y. Gan and I. Shih, “Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films”, Electron Devices, IEEE Transactions on, vol. 49, pp. 15-18, 2002.
[18]	J.S. Skarman, “On the relationship between photocurrent decay time and trap distribution in CdS and CdSe photoconductors”, Solid-State Electronics, vol. 8, pp. 17-29, 1965.
[19]	P. Pargas, “Phenomena of image sharpness recognition of CdS and CdSe photoconductors”, JOSA, vol. 54, pp. 516-517, 1964.
[20]	D.J. Pena, J.K. Mbindyo, A.J. Carado, T.E. Mallouk, C.D. Keating, B. Razavi and T.S Mayer, Template growth of photoconductive metal-CdSe-metal nanowires. The Journal of Physical Chemistry B, vol. 106, pp. 7458-7462, 2002.
[21]	N.E. Coates, H. Zhou, S. Krämer, L. Li, and D. Moses, “Solution‐Based In Situ Synthesis and Fabrication of Ultrasensitive CdSe Photoconductors”, Advanced Materials, vol. 22, pp. 5366-5369, 2010.
[22]	T. Elango, V. Subramanian, and K.R. Murali, “Characteristics of spray-deposited CdSe thin films”, Surface and Coatings Technology, vol. 123, pp. 8-11, 2000.
[23]	E. Talgorn, E. Moysidou, R.D. Abellon, T.J. Savenije, A. Goossens, A.J. Houtepen and L.D. Siebbeles, “Highly photoconductive CdSe quantum-dot films: influence of capping molecules and film preparation procedure” The Journal of Physical Chemistry C, vol. 114, pp. 3441-3447, 2010.
[24]	S.S. Joshi, C.D. Lokhande and S.H. Han, “A room temperature liquefied petroleum gas sensor based on all-electrodeposited n-CdSe/p-polyaniline junction” Sensors and Actuators B: Chemical, vol. 123, pp. 240-245, 2007.
[25]	V.A. Smyntyna, V. Gerasutenko, S. Kashulis, G. Mattongo, S. Reghini, “The causes of thickness dependence on the sensitivity of CdSe and CdS gas sensors to oxygen” Sensors Actuators B, vol.19, pp. 464-465, 1994.
[26]	G.V. Prakash, R. Singh, A. Kumar and R.K. Mishra, “Fabrication and characterisation of CdSe photonic structures from self-assembled templates” Materials Letters, vol. 60, pp. 1744-1747, 2006..
[27]	I.B. Divliansky, A. Shishido, I.C. Khoo, T.S. Mayer, D. Pena, S. Nishimura and T.E. Mallouk, “Fabrication of two-dimensional photonic crystals using interference lithography and electrodeposition of CdSe” Applied Physics Letters, vol. 79, pp. 3392-3394, 2001.
[28]	K. Kalyanasundaram and M. Grätzel, “Applications of functionalized transition metal complexes in photonic and optoelectronic devices”, Coordination chemistry reviews, vol. 177, pp. 347-414, 1998.
[29]	Y. Li, F. Qian, J. Xiang and C.M. Lieber, “Nanowire electronic and optoelectronic devices”, Materials Today, vol. 9, pp. 18-27, 2006.
[30]	J.Y. Kim and F.E. Osterloh, “ZnO-CdSe nanoparticle clusters as directional photoemitters with tunable wavelength”, Journal of the American Chemical Society, vol. 127, pp. 10152-10153, 2005.
[31]	C.R. Baxter and W.D. McLennan, “Organic type switching in tin selenide thin films”, J. Vac. Sci. Technol. Vol. 12, pp. 110, 1975.
[32]	M.D. Fischbein and M. Drndic, “CdSe nanocrystal quantum-dot memory”, Applied Physics Letters, vol. 86, pp. 193106, 2005.
[33]	S. Sahu, S.K. Majee, A.J. Pal, “Layer-by-layer assembly of capped CdSe nanoparticles: electrical bistability and memory phenomenon”, Applied Physics Letters, vol. 91, pp. 143108, 2007.
[34]	F. Li, D.I. Son, J.H. Ham, B.J. Kim, J.H. Jung, T.W. Kim, “Memory effect of nonvolatile bistable devices based on CdSe/ZnS nanoparticles sandwiched between C 60 layers”, Applied Physics Letters, vol. 91, pp. 162109-162109, 2007.
[35]	B. Bonello, and B. Fernandez, “Elastic constants of CdSe at low temperature”, Journal of Physics and Chemistry of Solids, vol. 54, pp. 209-212, 1993.
[36]	O.V. Vassiltsova, Z. Zhao, M.A. Petrukhina, M.A. Carpenter, “Surface-functionalized CdSe quantum dots for the detection of hydrocarbons”, Sensors and Actuators B: Chemical, vol.123, pp. 522-529, 2007.
[37]	C.S. Chu, and C.Y. Chuang, “Optical fiber sensor for dual sensing of dissolved oxygen and Cu2+ ions based on PdTFPP/CdSe embedded in sol–gel matrix”, Sensors and Actuators B: Chemical, vol. 209, pp. 94-99, 2015.
[38]	L. Ding, C. Fan, Y. Zhong, T. Li, and J. Huang, “A sensitive optic fiber sensor based on CdSe QDs fluorophore for nitric oxide detection”, Sensors and Actuators B: Chemical, vol.185, pp.70-76, 2013.
[39]	R.B. Kale, S.D. Sartale, B.K. Chougule and C.D. Lokhande, “Growth and characterisation of nanocrystalline CdSe thin films deposited by the successive ionic layer adsorption and reaction method”, Semicond. Sci .Tech., UK, vol. 19, pp. 980, 2004.
[40]	H.M. Pathan, B.R. Sankapal, J.D. Desai and C.D. Lokhande, “Preparation and characterization of nanocrystalline CdSe thin films deposited by SILAR method” Mater. Chem. & Phys., vol. 78, pp. 11-14, 2002.
[41]	D. Pathinettam Padiyan, A. Marikani and K.R. Murali. “Influence of thickness and substrate temperature on electrical and photoelectrical properties of vacuum-deposited CdSe thin films”, Mater. Chem. & Phys., vol. 78, pp. 51-58, 2003.
[42]	K.R. PRADIP KALITA, B. K. SARMA and H.L. DAS, “Space charge limited conduction in CdSe thin films”, Bull. Mater. Sci., vol. 26, pp. 613–617, 2003.
[43]	C. Baban, G.I. Rusu, “On the structural and optical characteristics of CdSe thin films” Appl. Surf. Sci, vol. 211, pp. 6-12, 2003.
[44]	C. Baban, G. I. Rusu, P. Prepelita, “ON THE OPTICAL PROPERTIES OF POLYCRYSTALLINE CdSe THIN FILMS” Journal of Optoelectronics and Advanced Materials, Romania, Vol. 7, pp. 817 – 821, 2005.
[45]	K. Subba Ramaiah, Y.K. Su, S.J. Chang, F.S. Juang, K. Ohdaira, Y. Shiraki, H.P. Liu, I.G. Chen, A.K. Bhatnagar, “Characterization of Cu doped CdSe thin films grown by vacuum evaporation” Journal of Crystal Growth 224 (2001) 74–82
[46]	D. Patidar, K. S. Rathore, N. S. Saxena, Kananbala Sharma, T. P. Sharma, “ENERGY BAND GAP AND CONDUCTIVITY MEASUREMENT OF CdSe THIN FILMS” Chalcogenide Letts. Vol. 5, pp. 21 – 25, 2008.
[47]	U. Pal, D. Samanta, S. Ghorai, and A.K. Chaudhuri, “Optical constants of vacuum‐evaporated polycrystalline cadmium selenide thin films”, Journal of applied physics, vol. 74, pp. 6368-6374, 1993.
[48]	R. Jäger‐Waldau, N. Stücheli, M. Braun, M. Lux Steiner, E. Bucher, R. Tenne, H. Flaisher, W. Kerfin, R. Braun, and W. Koschel, "Thin‐film CdSe: Photoluminescence and electronic measurements", Journal of applied physics, vol. 64, pp. 2601-2606, 1988.
[49]	M. Parlak, “Electrical, photo-electrical, optical and structural properties of CdSe thin films deposited by thermal and e-beam techniques”, Journal of Physics D: Applied Physics, vol. 41, pp. 035405, 2008.
[50]	N.S. Kissinger, M. Jayachandran, K. Perumal, C.S. Raja, “Structural and optical properties of electron beam evaporated CdSe thin films” Bull. Mater. Sci. vol. 30, pp. 547-551, 2007.
[51]	R.B. Kale and C.D. Lokhande, “Systematic study on structural phase behavior of CdSe thin films”, The Journal of Physical Chemistry B, vol. 109, pp. 20288-20294, 2005.
[52]	R.B. Kale and C.D. Lokhande, “Band gap shift, structural characterization and phase transformation of CdSe thin films from nanocrystalline cubic to nanorod hexagonal on air annealing” Semicond. Sci .Tech., UK, vol. 20, pp. 1, 2005.
[53]	S.S. Kale and C.D. Lokhande, “Thickness-dependent properties of chemically deposited CdSe thin films” Mater. Chem. & Phys., vol. 62, pp. 103-108, 2000.
[54]	M.T.S. Nair, P.K. Nair, R.A. Zingaro and E.A. Meyers, “Enhancement of photosensitivity in chemically deposited CdSe thin films by air annealing”, J. Appl. Phys., vol. 74, pp. 1879-1884, 1993.
[55]	S. Erat, H. Metin and M. Arı, “Influence of the annealing in nitrogen atmosphere on the XRD, EDX, SEM and electrical properties of chemical bath deposited CdSe thin films”, Mater. Chem. & Phys., vol. 111, pp. 114-120, 2008.
[56]	V.M. Garcia, M.T.S Nair, P.K. Nair and R.A. Zingaro, “Preparation of highly photosensitive CdSe thin films by a chemical bath deposition technique” Semicond. Sci .Tech., vol. 11, pp. 427, 1996.
[57]	B.K. Rai, H.D. Bist, R.S. Katiyar, M.T.S. Nair, P.K. Nair, and A. Mannivannan, “Simultaneous observation of strong and weak quantum confinement effect in chemically deposited CdSe thin films: a spectro-structural study” J. Appl. Phys., vol. 82, pp. 1310-1319, 1997.
[58]	Z. Loizos, N. Spyrellis and G. Maurin, “Electrochemical synthesis of semiconducting CdSe thin films” Thin Solid Films, vol. 204, pp. 139-149, 1991.
[59]	A.V. Kokate, U.B. Suryavanshi and C.H. Bhosale, “Structural, compositional, and optical properties of electrochemically deposited stoichiometric CdSe thin films from non-aqueous bath”, Solar Energy, vol. 80, pp. 156-160, 2006.
[60]	L.P. Colletti, B.H. Flowers and J.L. Stickney, “Formation of thin films of CdTe, CdSe, and CdS by electrochemical atomic layer epitaxy”, Journal of the Electrochemical Society, vol. 145, pp. 1442-1449, 1998.
[61]	S.J. Lade, M.D. Uplane, M.M. Uplane and C.D. Lokhande, “Structural, optical and photoelectrochemical properties of electrodeposited CdSe thin films”, J. Mater. Sci: Mater. Electron, vol. 9, pp. 477-482, 1998.
[62]	B. Su and K.L. Choy, “Electrostatic assisted aerosol jet deposition of CdS, CdSe and ZnS thin films”, Thin Solid Films, vol. 361, pp.102-106, 2000.
[63]	S. Velumani, X. Mathew, P.J. Sebastian, S.K. Narayandass and D. Mangalaraj, “Structural and optical properties of hot wall deposited CdSe thin films”, Solar Energy Mater & Solar Cells, vol. 76, pp. 347-358, 2003.
[64]	S. Velumani, X. Mathew, P.J. Sebastian, S.K. Narayandass and D. Mangalaraj, “Thickness dependent properties of hot wall deposited CdSe films”, Journal of Materials Science Letters, vol. 22, pp. 25-28, 2003.
[65]	S. Velumani, S.K. Narayandass, D. Mangalaraj, P.J. Sebastian, X. Mathew, “Dielectric and conduction studies on hot-wall deposited CdSe films”, Solar energy materials and solar cells, vol. 81, pp.323-338, 2004.
[66]	A.A. Yadav, M.A. Barote, E.U. Masumdar, “Studies on cadmium selenide (CdSe) thin films deposited by spray pyrolysis”, Mater. Chem. & Phys., vol. 121, pp. 53-57, 2010.
[67]	S. HyukáIm, and J. HyeokáPark, “CdS or CdSe decorated TiO2 nanotube arrays from spray pyrolysis deposition: use in photoelectrochemical cells”, Chemical communications, vol. 46, pp. 2385-2387, 2010.
[68]	J.L. Chin‐hsin, and J.H. Wang, “Spray‐Pyrolyzed Thin Film CdSe Photoelectrochemical Cells”, Journal of The Electrochemical Society, vol. 129, pp.719-722, 1982.
[69]	T. Elango, V. Subramanian, K.R. Murali, “Characteristics of spray-deposited CdSe thin films” Surface and Coatings Technology, vol. 123, pp. 8-11, 2000.
[70]	F. Raoult, B. Fortin, A. Quemerais, G. Rosse, Y. Colin, “Influence of thermal treatments on the sensitivity of CdSe thin films to oxygen ionosorption”, Journal of Physics and Chemistry of Solids, vol. 53, pp.723-732, 1992.
[71]	P.A. Nwofe, K.T.R. Reddy, G. Sreedevi, J.K. Tan, I. Forbes, R.W. Miles, “Single phase, large grain, p-conductivity-type SnS layers produced using the thermal evaporation method” Energy Procedia, vol.15, pp. 354-360, 2012.
[72]	P.A. Nwofe, K.T.R. Reddy and R.W. Miles, “Influence of Deposition Time on the Properties of Highly-oriented SnS Thin Films Prepared Using the Thermal Evaporation Method” Advanced Materials Research, vol. 602, pp. 1409-1412, 2013.
[73]	P.A. Nwofe, K.T.Ramakrishna Reddy and R.W. Miles “Type Conversion of p-SnS to n-SnS using a SnCl4/CH3OH heat treatment”. IEEE Xplore Digital Library, 14115963, pp. 2518-2523, 2013.
[74]	J. I. Pankove, “Optical Processes in Semiconductor, Prentice-Hall”, Upper Saddle River, New Jersey, p. 36, 1971.
[75]	P.A. Nwofe, K.T.R Reddy, J.K. Tan, I. Forbes, and R.W. Miles, “Thickness dependent optical properties of thermally evaporated SnS thin films” Physics Procedia, vol. 25, pp. 150-157, 2012.
[76]	P.A. Nwofe, K.T.R. Reddy, G. Sreedevi, J.K. Tan, R.W. Miles, “Structural, optical, and electro-optical properties of thermally evaporated tin sulphide layers” Japanese Journal of Applied Physics, vol.51, pp. 10NC36, 2012.
[77]	A. Mondal, A. Dhar, S. Chaudhuri, A.K. Pal, Studies on photoelectrical, optical and galvanomagnetic properties of CdSe films. Journal of Materials Science, vol. 25, pp. 2221-2226, 1990.

Cite This Article

Plain Text BibTeX RIS

APA Style

R. A. Chikwenze, P. A. Nwofe, P. E. Agbo, S. N. Nwankwo, J. E. Ekpe, et al. (2015). Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films. International Journal of Materials Science and Applications, 4(2), 101-106. https://doi.org/10.11648/j.ijmsa.20150402.15

Copy | Download

ACS Style

R. A. Chikwenze; P. A. Nwofe; P. E. Agbo; S. N. Nwankwo; J. E. Ekpe, et al. Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films. Int. J. Mater. Sci. Appl. 2015, 4(2), 101-106. doi: 10.11648/j.ijmsa.20150402.15

Copy | Download

AMA Style

R. A. Chikwenze, P. A. Nwofe, P. E. Agbo, S. N. Nwankwo, J. E. Ekpe, et al. Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films. Int J Mater Sci Appl. 2015;4(2):101-106. doi: 10.11648/j.ijmsa.20150402.15

Copy | Download

@article{10.11648/j.ijmsa.20150402.15,
  author = {R. A. Chikwenze and P. A. Nwofe and P. E. Agbo and S. N. Nwankwo and J. E. Ekpe and F. U. Nweke},
  title = {Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {2},
  pages = {101-106},
  doi = {10.11648/j.ijmsa.20150402.15},
  url = {https://doi.org/10.11648/j.ijmsa.20150402.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150402.15},
  abstract = {In this study, the effect of dip time on the structural and optical properties of cadmium selenide (CdSe) thin films grown by the chemical bath deposition method is reported. The films were grown with varying dip time in the range of 4 h to 12h, and the other deposition variables (substrate temperature, source to substrate distance, pH, and concentration) were kept constant. X-ray diffractometry (XRD) and optical spectroscopy were used to characterise the layers. The results show that the crystallite size and the film thickness increased with an increase in the dip time up to a “critical value” and then decreased otherwise for the latter. The increase in the crystallite size was more pronounced at the lower dip time ( 8 h. The energy band gap was found to be direct with an optimum value of 1.2 eV obtained for films grown at a dip time of 8 h.},
 year = {2015}
}

Copy | Download

TY - JOUR
T1 - Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films
AU - R. A. Chikwenze
AU - P. A. Nwofe
AU - P. E. Agbo
AU - S. N. Nwankwo
AU - J. E. Ekpe
AU - F. U. Nweke
Y1 - 2015/03/17
PY - 2015
N1 - https://doi.org/10.11648/j.ijmsa.20150402.15
DO - 10.11648/j.ijmsa.20150402.15
T2 - International Journal of Materials Science and Applications
JF - International Journal of Materials Science and Applications
JO - International Journal of Materials Science and Applications
SP - 101
EP - 106
PB - Science Publishing Group
SN - 2327-2643
UR - https://doi.org/10.11648/j.ijmsa.20150402.15
AB - In this study, the effect of dip time on the structural and optical properties of cadmium selenide (CdSe) thin films grown by the chemical bath deposition method is reported. The films were grown with varying dip time in the range of 4 h to 12h, and the other deposition variables (substrate temperature, source to substrate distance, pH, and concentration) were kept constant. X-ray diffractometry (XRD) and optical spectroscopy were used to characterise the layers. The results show that the crystallite size and the film thickness increased with an increase in the dip time up to a “critical value” and then decreased otherwise for the latter. The increase in the crystallite size was more pronounced at the lower dip time ( 8 h. The energy band gap was found to be direct with an optimum value of 1.2 eV obtained for films grown at a dip time of 8 h.
VL - 4
IS - 2
ER -

Copy | Download

Author Information

R. A. Chikwenze

Department of Physics, Faculty of Natural Sciences, Federal University, Ndufu-Alike, Ikwo, Nigeria
P. A. Nwofe

Division of Materials Science and Renewable Energy, Department of Industrial Physics, Faculty of Sciences, Ebonyi State University, Abakaliki, Nigeria
P. E. Agbo

Division of Materials Science and Renewable Energy, Department of Industrial Physics, Faculty of Sciences, Ebonyi State University, Abakaliki, Nigeria
S. N. Nwankwo

Division of Materials Science and Renewable Energy, Department of Industrial Physics, Faculty of Sciences, Ebonyi State University, Abakaliki, Nigeria
J. E. Ekpe

Division of Materials Science and Renewable Energy, Department of Industrial Physics, Faculty of Sciences, Ebonyi State University, Abakaliki, Nigeria
F. U. Nweke

Division of Materials Science and Renewable Energy, Department of Industrial Physics, Faculty of Sciences, Ebonyi State University, Abakaliki, Nigeria

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

R. A. Chikwenze, P. A. Nwofe, P. E. Agbo, S. N. Nwankwo, J. E. Ekpe, et al. (2015). Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films. International Journal of Materials Science and Applications, 4(2), 101-106. https://doi.org/10.11648/j.ijmsa.20150402.15

Copy | Download

ACS Style

R. A. Chikwenze; P. A. Nwofe; P. E. Agbo; S. N. Nwankwo; J. E. Ekpe, et al. Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films. Int. J. Mater. Sci. Appl. 2015, 4(2), 101-106. doi: 10.11648/j.ijmsa.20150402.15

Copy | Download

AMA Style

R. A. Chikwenze, P. A. Nwofe, P. E. Agbo, S. N. Nwankwo, J. E. Ekpe, et al. Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films. Int J Mater Sci Appl. 2015;4(2):101-106. doi: 10.11648/j.ijmsa.20150402.15

Copy | Download

@article{10.11648/j.ijmsa.20150402.15,
  author = {R. A. Chikwenze and P. A. Nwofe and P. E. Agbo and S. N. Nwankwo and J. E. Ekpe and F. U. Nweke},
  title = {Effect of Dip Time on the Structural and Optical Properties of Chemically Deposited CdSe Thin Films},
  journal = {International Journal of Materials Science and Applications},
  volume = {4},
  number = {2},
  pages = {101-106},
  doi = {10.11648/j.ijmsa.20150402.15},
  url = {https://doi.org/10.11648/j.ijmsa.20150402.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150402.15},
  abstract = {In this study, the effect of dip time on the structural and optical properties of cadmium selenide (CdSe) thin films grown by the chemical bath deposition method is reported. The films were grown with varying dip time in the range of 4 h to 12h, and the other deposition variables (substrate temperature, source to substrate distance, pH, and concentration) were kept constant. X-ray diffractometry (XRD) and optical spectroscopy were used to characterise the layers. The results show that the crystallite size and the film thickness increased with an increase in the dip time up to a “critical value” and then decreased otherwise for the latter. The increase in the crystallite size was more pronounced at the lower dip time ( 8 h. The energy band gap was found to be direct with an optimum value of 1.2 eV obtained for films grown at a dip time of 8 h.},
 year = {2015}
}

Copy | Download