Cracked die is a serious failure mode in Light Emitting Diode (LED) industry – affecting the LED quality and long-term reliability performance. In this paper, an investigation has been carried out to find out a relation between die bonding force and the occurrence of die crack at Germanium (Ge) substrate due to die attach (DA) ejector pin indentation. Based on the analysis, the results show that cracks start to occur at 60 gram-force (gF) bond force and above. The crack length at the die substrate increases with respect to the bond force. These indented dies were further analyzed by using Scanning Electron Microscope (SEM). The results show plastic deformation, slip traces and material pile-up at the vicinity of ejector pin crater. Some samples were sectioned using Focus Ion Beam (FIB) and it was found the crack depth does not exceed beyond 20.5μm and it follows the (111) plane. These findings, concludes that cracks start to appear at 60gF and they are confined to surface level even indented at extreme load (140gF). These cracks are far away from the active region of LED.
| Published in | International Journal of Materials Science and Applications (Volume 4, Issue 1) |
| DOI | 10.11648/j.ijmsa.20150401.11 |
| Page(s) | 1-7 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
Crack Die, LED Reliability, Bond Force Indentation, Ge (Germanium), Ejector Pin, Stress, Surface Deformation, Slip-Trace
| [1] | Matteo Meneghini, Augusto Tazzoli, Giovanna Mura, Gaudenzio Meneghesso, and Enrico Zanoni, “ A Review on the Physical Mechanisms that Limit the Reliability of GaN-Based LEDs”, IEEE, 2009, pp108 – 110. |
| [2] | Jasprit Singh “LED Reliability Issue”, in Semiconductor Optoelectronics Physics and Technology, 1st ed., New York, US: McGraw-Hill International Editions, 1995, pp 475-477. |
| [3] | Chen Zhaohui, Zhang Qin, Wang Kai, Luo Xiaobing and Liu Sheng, “Reliability Test and Failure Analysis of High Power LED Packages”, Journal of Semiconductors, Vol.32, No.1, 2011, pp. 1. |
| [4] | Jiejie Fan, K.C.Yang and Michael Pecht, “Physics-of-Failure-Based Prognostics and Health Management for High-Power White Light-Emitting Diode Lighting”, IEEE Transactions on Devices and Material Reliability, Vol.11.No 3, 2011, pp1-2. |
| [5] | Shan GaO, Jupyo Hong, Sanghyun Shin, Yongki Lee, Seogmoon Choi, Sung Yi, “Design Optimization on the Heat Transfer and Mechanical Reliability of High Brightness Light Emitting Diodes (HBLED) Package”, IEEE, 2008, pp798. |
| [6] | Janzheng Hu, Lianqiao Yang, Woong Joon Hwang, Moo Whan Shin, “ Thermal and mechanical analysis of delamination in GaN-Based LED Packages”, Journal of Crystal Growth, Elsevier, 2006, pp157-158. |
| [7] | Ugo Lafont, Henk van Zeijl, Sybrand van der Zwaag, “Increasing the reliability of solid state lighting system via self-healing approaches: A review”, Journal of Microelectronics Reliability, vol. 52, 2012, pp 71-89. |
| [8] | S. Abdullah, M.F. Abdullah, A.K. Ariffin, Z.A. Aziz and M.J. Ghazali, “ Thermal–Mechanical Analysis of a QFN Stacked-Die Leadframe Under Reflow Process” , WCE, 2008, pp 1-2. |
| [9] | Shin-Yueh, Tsung-Lin Chou, Chen-Fu Huang, Chung-Jung Wu, Chia-Liang Hsu, and Kuo-Ning Chiang, “Determination of Maximum Strength and Optimization of LED Chip Structure”, E-mail : knchiang@pme.nthu.edu.tw |
| [10] | C. Chen, M. Tsai, J. Tang, W. Tsai and T. Chen, “Determination of LED Die Strength,” in International conference of EMAP, Daejeon, 2008, pp. 1-6. |
| [11] | Japan Creation Manufacturer – Full Automated Die Bonder Operation Manual, Serial No. 175. Version 1. 2010, pp. 1-5. |
| [12] | T. Taishi, Yonenaga and K. Hoshikawa, “Improved Czochralski Growth of Germanium Single Crystals from a Melt Covered By Boron Oxide”, Acta Physica Polonica A, Vol. 124, 2013, pp 232. |
| [13] | C. Claeys and E. Simoen, “Germanium Material” in Germanium-Based Technologies: From Materials to Devices, 1st ed. Oxford, UK: Elsevier Limited, 2007, pp. 11. |
| [14] | J.E. Bradby, J.S.Willams, J.Wong-Leung, M.V.Swain and P.Munroe “Nanoindentation-applied deformation of Ge”, Applied Physics Letters, vol.80, 2002, pp. 2651-2653. |
| [15] | Lawrence H. Van Vlack, “Atomic Bonding and Coordination” in Elements of Materials Science and Engineering, 6th ed. Michigan, US: Addison-Willey, 1989, pp 48-52. |
| [16] | A. A. Griffith. “The Phenomena of rapture and flow in solids”. Philosophical Transactions of the Royal Society of London, Series A, 1921, pp. 163-198. |
| [17] | A.C Fisher-Cripps, “The IBIS Handbook of Nanoindentation”, Fisher-Cripps Laboratories Pty. Limited, NSW Australia, 2009. |
| [18] | Micro Mechanics, “Ejector Pin Configuration”, 2013, .http://www.micro-mechanics.com/product.php?id=102 |
| [19] | W.C Oliver, G.M. Pharr, “Measures of hardness and elastic modulus by instrumented indentation: Advances in understanding and refinements to methodology”, Journal of Material Research, vol. 19, 2004, pp 6 – 12. |
| [20] | “Correx Tension Gauge –Instruction for User” HAAG-STEIT International, Haag-Streit Companies, 2013. |
| [21] | Shailesh KR, Ciji Pearl Kurian and Savitha G Kini, “Solid State Lighting Reliability from Failure Mechanisms Perspective: A Review of Related Literature”, International Journal of Semiconductor Science & Technology”. Vol 3, No. 1, 2012, pp. 43-45, 46. |
| [22] | Yuqi Jiang, Xianzhong Song, Tim Fai Lam, Surasez Samatitchen, “FBGA Die Crack Issue Analysis”, IEEE, 1-4244-1253-6/07, 2007, pp 1-2. |
| [23] | Seung-Jae Lee, Kang Ho Kim, Jin-Woo Ju, Tak Jeong, Cheul-Ro Lee, and Jong Hyeob Baek, “High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology”, The Japan Society of Applied Physics, 2011, pp1-3. |
| [24] | Guoguang Lu, Shaohua Yang, Yun Huang, “Analysis on Failure Modes and Mechanisms of LED”, IEEE, 978-1-4244-4905-7/09, 2009, pp1238. |
| [25] | D.J. Oliver, J.E Bradby, S.Ruffell, J.S Williams and P. Munroe, “Nanoindentation-applied phase transformation in relaxed and un-relaxed ion-implanted germanium”, Journal of Applied Physics, vol.106, 2009, pp 4-5. |
| [26] | Michael F Ashy & David R H Jones. “The Yield Strength, Tensile Strength, Harness and Ductility”, in Engineering Materials 1 – An Introduction to their Properties and Applications, 1st ed. Oxford, UK: Pergamon Press, 1989, pp 79, 86-88. |
| [27] | Mitsuo Fukuda, “Reliability –Basics of Degradation and Reliability”, in Optical Semiconductor Devices, 1st ed. New York, US: John Wiley & Sons, Inc., 1999, pp 341-344. |
| [28] | Norman E. Dowling “Fracture of Cracked Members”, in Mechanical Behaviour of Materials – Engineering Methods for Deformation, Fracture and Fatique, 3rd ed., New Jersey, US: Pearson Prentice Hall, 3rd Edition, 2007, pp 322-323. |
| [29] | Ohring Milton. “Electrons in Atoms and Solids: Bonding”, in Engineering Materials Science, vol. 1, London, UK: Academic Press, 1995, pp: 59. |
| [30] | B. R. Lawn, “Hertzian Fracture in Single Crystals with the Diamond Structure”, Department of Defense Advanced Researh Projects Agency Contract SD-86, Material Research Program, Industrial Distribution Ltd, 1967, pp14-15. |
APA Style
Luruthudass Annaniah, Mutharasu Devarajan. (2014). Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process. International Journal of Materials Science and Applications, 4(1), 1-7. https://doi.org/10.11648/j.ijmsa.20150401.11
ACS Style
Luruthudass Annaniah; Mutharasu Devarajan. Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process. Int. J. Mater. Sci. Appl. 2014, 4(1), 1-7. doi: 10.11648/j.ijmsa.20150401.11
AMA Style
Luruthudass Annaniah, Mutharasu Devarajan. Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process. Int J Mater Sci Appl. 2014;4(1):1-7. doi: 10.11648/j.ijmsa.20150401.11
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Download@article{10.11648/j.ijmsa.20150401.11,
author = {Luruthudass Annaniah and Mutharasu Devarajan},
title = {Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process},
journal = {International Journal of Materials Science and Applications},
volume = {4},
number = {1},
pages = {1-7},
doi = {10.11648/j.ijmsa.20150401.11},
url = {https://doi.org/10.11648/j.ijmsa.20150401.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20150401.11},
abstract = {Cracked die is a serious failure mode in Light Emitting Diode (LED) industry – affecting the LED quality and long-term reliability performance. In this paper, an investigation has been carried out to find out a relation between die bonding force and the occurrence of die crack at Germanium (Ge) substrate due to die attach (DA) ejector pin indentation. Based on the analysis, the results show that cracks start to occur at 60 gram-force (gF) bond force and above. The crack length at the die substrate increases with respect to the bond force. These indented dies were further analyzed by using Scanning Electron Microscope (SEM). The results show plastic deformation, slip traces and material pile-up at the vicinity of ejector pin crater. Some samples were sectioned using Focus Ion Beam (FIB) and it was found the crack depth does not exceed beyond 20.5μm and it follows the (111) plane. These findings, concludes that cracks start to appear at 60gF and they are confined to surface level even indented at extreme load (140gF). These cracks are far away from the active region of LED.},
year = {2014}
}
TY - JOUR T1 - Analysis of Crack Formation in Germanium Substrate at AlInGaP Die Bonding Process AU - Luruthudass Annaniah AU - Mutharasu Devarajan Y1 - 2014/12/18 PY - 2014 N1 - https://doi.org/10.11648/j.ijmsa.20150401.11 DO - 10.11648/j.ijmsa.20150401.11 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 1 EP - 7 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20150401.11 AB - Cracked die is a serious failure mode in Light Emitting Diode (LED) industry – affecting the LED quality and long-term reliability performance. In this paper, an investigation has been carried out to find out a relation between die bonding force and the occurrence of die crack at Germanium (Ge) substrate due to die attach (DA) ejector pin indentation. Based on the analysis, the results show that cracks start to occur at 60 gram-force (gF) bond force and above. The crack length at the die substrate increases with respect to the bond force. These indented dies were further analyzed by using Scanning Electron Microscope (SEM). The results show plastic deformation, slip traces and material pile-up at the vicinity of ejector pin crater. Some samples were sectioned using Focus Ion Beam (FIB) and it was found the crack depth does not exceed beyond 20.5μm and it follows the (111) plane. These findings, concludes that cracks start to appear at 60gF and they are confined to surface level even indented at extreme load (140gF). These cracks are far away from the active region of LED. VL - 4 IS - 1 ER -
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