Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt

S. M. Patil; M. M. Salunkhe; N. B. Pawar; P. N. Bhosale

doi:doi:10.11648/j.ijmsa.20130201.14

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Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt

S. M. Patil, M. M. Salunkhe, N. B. Pawar, P. N. Bhosale

Published in International Journal of Materials Science and Applications (Volume 2, Issue 1)

Received: 12 February 2013 Accepted: Published: 10 January 2013

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Abstract

Thermoelectric study of Sb (III) doped bismuth tellurium selenide ,Bi2-x Sbx(Te1-xSex)3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO3)3 and antimony precursor (SbCl3) in aqueous medium to favor the reaction with Te2- and Se2-chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi2-x Sbx(Te1-xSex)3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi2-x Sbx(Te1-xSex)3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi2(Te1-xSex)3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.

Published in	International Journal of Materials Science and Applications (Volume 2, Issue 1)
DOI	10.11648/j.ijmsa.20130201.14
Page(s)	30-36
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

APT, Metal chalcogenides, X-ray diffraction, XPS

References

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S. M. Patil, M. M. Salunkhe, N. B. Pawar, P. N. Bhosale. (2013). Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt. International Journal of Materials Science and Applications, 2(1), 30-36. https://doi.org/10.11648/j.ijmsa.20130201.14

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ACS Style

S. M. Patil; M. M. Salunkhe; N. B. Pawar; P. N. Bhosale. Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt. Int. J. Mater. Sci. Appl. 2013, 2(1), 30-36. doi: 10.11648/j.ijmsa.20130201.14

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AMA Style

S. M. Patil, M. M. Salunkhe, N. B. Pawar, P. N. Bhosale. Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt. Int J Mater Sci Appl. 2013;2(1):30-36. doi: 10.11648/j.ijmsa.20130201.14

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@article{10.11648/j.ijmsa.20130201.14,
  author = {S. M. Patil and M. M. Salunkhe and N. B. Pawar and P. N. Bhosale},
  title = {Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt},
  journal = {International Journal of Materials Science and Applications},
  volume = {2},
  number = {1},
  pages = {30-36},
  doi = {10.11648/j.ijmsa.20130201.14},
  url = {https://doi.org/10.11648/j.ijmsa.20130201.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130201.14},
  abstract = {Thermoelectric study of  Sb (III) doped bismuth tellurium selenide ,Bi2-x Sbx(Te1-xSex)3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO3)3 and antimony precursor (SbCl3) in aqueous medium to favor the reaction with Te2- and Se2-chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi2-x Sbx(Te1-xSex)3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi2-x Sbx(Te1-xSex)3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi2(Te1-xSex)3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.},
 year = {2013}
}

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TY  - JOUR
T1  - Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt
AU  - S. M. Patil
AU  - M. M. Salunkhe
AU  - N. B. Pawar
AU  - P. N. Bhosale
Y1  - 2013/01/10
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20130201.14
DO  - 10.11648/j.ijmsa.20130201.14
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 30
EP  - 36
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20130201.14
AB  - Thermoelectric study of  Sb (III) doped bismuth tellurium selenide ,Bi2-x Sbx(Te1-xSex)3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO3)3 and antimony precursor (SbCl3) in aqueous medium to favor the reaction with Te2- and Se2-chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi2-x Sbx(Te1-xSex)3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi2-x Sbx(Te1-xSex)3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi2(Te1-xSex)3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.
VL  - 2
IS  - 1
ER  -

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Author Information

S. M. Patil

Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur-416 004
M. M. Salunkhe

Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur-416 004
N. B. Pawar

Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur-416 004
P. N. Bhosale

Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur-416 004

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Plain Text BibTeX RIS

APA Style

S. M. Patil, M. M. Salunkhe, N. B. Pawar, P. N. Bhosale. (2013). Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt. International Journal of Materials Science and Applications, 2(1), 30-36. https://doi.org/10.11648/j.ijmsa.20130201.14

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ACS Style

S. M. Patil; M. M. Salunkhe; N. B. Pawar; P. N. Bhosale. Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt. Int. J. Mater. Sci. Appl. 2013, 2(1), 30-36. doi: 10.11648/j.ijmsa.20130201.14

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AMA Style

S. M. Patil, M. M. Salunkhe, N. B. Pawar, P. N. Bhosale. Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt. Int J Mater Sci Appl. 2013;2(1):30-36. doi: 10.11648/j.ijmsa.20130201.14

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@article{10.11648/j.ijmsa.20130201.14,
  author = {S. M. Patil and M. M. Salunkhe and N. B. Pawar and P. N. Bhosale},
  title = {Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt},
  journal = {International Journal of Materials Science and Applications},
  volume = {2},
  number = {1},
  pages = {30-36},
  doi = {10.11648/j.ijmsa.20130201.14},
  url = {https://doi.org/10.11648/j.ijmsa.20130201.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130201.14},
  abstract = {Thermoelectric study of  Sb (III) doped bismuth tellurium selenide ,Bi2-x Sbx(Te1-xSex)3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO3)3 and antimony precursor (SbCl3) in aqueous medium to favor the reaction with Te2- and Se2-chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi2-x Sbx(Te1-xSex)3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi2-x Sbx(Te1-xSex)3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi2(Te1-xSex)3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Synthesis and Thermoelectric Study of Sb (III) Doped Bi2(Te1-Xsex)3 Thin Films by Apt
AU  - S. M. Patil
AU  - M. M. Salunkhe
AU  - N. B. Pawar
AU  - P. N. Bhosale
Y1  - 2013/01/10
PY  - 2013
N1  - https://doi.org/10.11648/j.ijmsa.20130201.14
DO  - 10.11648/j.ijmsa.20130201.14
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 30
EP  - 36
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20130201.14
AB  - Thermoelectric study of  Sb (III) doped bismuth tellurium selenide ,Bi2-x Sbx(Te1-xSex)3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO3)3 and antimony precursor (SbCl3) in aqueous medium to favor the reaction with Te2- and Se2-chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi2-x Sbx(Te1-xSex)3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi2-x Sbx(Te1-xSex)3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi2(Te1-xSex)3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.
VL  - 2
IS  - 1
ER  -

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