American Journal of Modern Physics

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Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals

Received: 29 April 2015    Accepted: 11 May 2015    Published: 16 May 2015
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Abstract

Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.

DOI 10.11648/j.ajmp.s.2015040301.21
Published in American Journal of Modern Physics (Volume 4, Issue 3-1, May 2015)

This article belongs to the Special Issue Many Particle Simulations

Page(s) 48-52
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Channeling Radiation, Fokker-Planck Equation, Dechanneling, Radiation Spectra

References
[1] Carrigan R. A., Negative Particle Planar and Axial Channeling and Channeling Collimation, in the book "Charged and Neutral Particles ChannelingPheno mena- Channeling 2008", Dabagov S.B., and Pa lumbo L., Eds., World Scientific Publ. (2010) 129.
[2] DabagovS.B., and ZhevagoN.K., NuovoCimento 31(9)(2008) 491.
[3] Kumakhov M.A., and Shirmer G., Atomic Collisions in Crystals, Moscow: Atomizdat, 1980 (in Russian).
[4] BeloshitskyVV, KomarovFF, and Kumakhov MA, Dechanneling, flux-peaking and energy losses of fast charged particles penetrating through thick crystals, Phys. Rep. 139 (6)(1986) 293-364.
[5] Kostyuk A., Korol A., Solov’yovA.and Greiner W., J. Phys. B: At. Mol. Opt. Phys. 44(2011) 075208.
[6] Ohtsuki Y.-H., Charged Beam Interaction With Solids, New York, 1983.
[7] BackeH.et al. Nucl. Instr. Meth. in Phys. Res. B266 (2008) 3835.
[8] BogdanovO.V., KorotchenkoK.B. and Pi vovarovYu.L., J. Phys. B: At. Mol. Opt. Phys. 41 (2008) 055004.
[9] BabaevA.A., et al., On Crystal-Assisted Processes by Means of 20–800 MeV e-/e+ LNF Beams, PreprintLNF 22 (IR)(2008) pp. 1-42.
[10] Gemmell D.S., Rev. Mod. Phys. 46(1974) 129.
[11] Doyle P.A. and Turner P. S., ActaCrystallogr. A 24, 390 (1968).
[12] Baier V. N., V. M. Katkov and V. M. Strakhovenko 1998, Electromagnetic Processes at High Energies in Oriented Single Crystals. World Scien tific, Singapore.
[13] AkhiezerA.I., and Shu’lga N.F. High Energy Elec trodynamics in Matter, Gordon and Breach, Lux emburg, 1996.
Author Information
  • Department of Physics, Payame Noor University, Tehran, Iran

  • Department of Physics, Payame Noor University, Tehran, Iran

  • Department of Physics, Payame Noor University, Tehran, Iran

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  • APA Style

    Hamid Shafeghat, Alireza Abbasnia, Saeed Mohammadi. (2015). Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals. American Journal of Modern Physics, 4(3-1), 48-52. https://doi.org/10.11648/j.ajmp.s.2015040301.21

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    ACS Style

    Hamid Shafeghat; Alireza Abbasnia; Saeed Mohammadi. Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals. Am. J. Mod. Phys. 2015, 4(3-1), 48-52. doi: 10.11648/j.ajmp.s.2015040301.21

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    AMA Style

    Hamid Shafeghat, Alireza Abbasnia, Saeed Mohammadi. Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals. Am J Mod Phys. 2015;4(3-1):48-52. doi: 10.11648/j.ajmp.s.2015040301.21

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  • @article{10.11648/j.ajmp.s.2015040301.21,
      author = {Hamid Shafeghat and Alireza Abbasnia and Saeed Mohammadi},
      title = {Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals},
      journal = {American Journal of Modern Physics},
      volume = {4},
      number = {3-1},
      pages = {48-52},
      doi = {10.11648/j.ajmp.s.2015040301.21},
      url = {https://doi.org/10.11648/j.ajmp.s.2015040301.21},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ajmp.s.2015040301.21},
      abstract = {Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.},
     year = {2015}
    }
    

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    AU  - Hamid Shafeghat
    AU  - Alireza Abbasnia
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    AB  - Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.
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